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Zverev M.M.,Moscow State Institute of Radioengineering | Val'Dner V.O.,Moscow State Institute of Radioengineering | Gamov N.A.,Moscow State Institute of Radioengineering | Zhdanova E.V.,Moscow State Institute of Radioengineering | And 4 more authors.
Optics and Spectroscopy (English translation of Optika i Spektroskopiya) | Year: 2013

Catastrophic degradation of pulsed lasers based on InGaAs/AlGaAs/GaAs structures with different design of the active domain with transverse pumping by the electron beam at T = 300 K is studied. In lasers based on structures with a InGaAs single quantum well and with seven quantum wells, the maximal values of pulsed power are 70-90 and 10-20 W, respectively. © 2013 Pleiades Publishing, Ltd.


Davydova E.I.,Stelmakh Polyus Research and Development Institute | Dmitriev V.V.,Stelmakh Polyus Research and Development Institute | Kozlov Y.Y.,Stelmakh Polyus Research and Development Institute | Kukushkin I.A.,Stelmakh Polyus Research and Development Institute | And 2 more authors.
Quantum Electronics | Year: 2011

The operation of single-mode diode lasers with a front mirror passivated by ZnSe fllms of different thicknesses is studied in the pulsed regime (pulse duration ι = 0:2 - 10 μs). It is found that in the case of short (0.2 μs) pulses, the catastrophic optical damage threshold grows almost linearly as the fllm thickness on the front mirror increases from 0.1 to 0.5 μm. It is shown that lasers with mirrors passivated by 'thick' (0.4 - 0.6 μm) ZnSe films can operate stably in the case of 'long' (2 - 10 μs) pulses. It is assumed that in this pulsed regime the ZnSe film provides an additional heat removal from the hot zone of the front mirror, and consequently increases the optical damage threshold. © 2011 Kvantovaya Elektronika and Turpion Ltd.


Zhuravleva O.V.,Stelmakh Polyus Research and Development Institute | Ivanov A.V.,Stelmakh Polyus Research and Development Institute | Kurnosov V.D.,Stelmakh Polyus Research and Development Institute | Kurnosov K.V.,Stelmakh Polyus Research and Development Institute | And 2 more authors.
Semiconductors | Year: 2010

The reliability of the ILPN-134 is investigated laser module. The technique, which allows one to estimate what contribution is introduced by individual processes of aging of the laser diode and the optical system to the degradation of the laser module ILPN-134, is suggested. The activation energies of degradation processes, the standard deviations, and the failure rates of the laser diode and the optical system are determined. © 2010 Pleiades Publishing, Ltd.


Konyaev V.P.,Stelmakh Polyus Research and Development Institute | Marmalyuk A.A.,Stelmakh Polyus Research and Development Institute | Ladugin M.A.,Stelmakh Polyus Research and Development Institute | Bagaev T.A.,Stelmakh Polyus Research and Development Institute | And 5 more authors.
Semiconductors | Year: 2014

The results of studying single laser diodes and arrays in the spectral range of 900-1060 nm, fabricated based on InGaAs/AlGaAs epitaxially integrated heterostructures are presented. It is shown that the use of InGaAs/AlGaAs epitaxially integrated heterostructures allows the development of laser emitters with increased power and brightness, operating in the short pulse mode. The results of studying the characteristics of laser-diode arrays (LDAs) fabricated using these heterostructures are presented. © 2014 Pleiades Publishing, Ltd.

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