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Zasavitskii I.I.,Russian Academy of Sciences | Pashkeev D.A.,Russian Academy of Sciences | Marmalyuk A.A.,Mf Stelmakh Polyus Research And Development Institute | Ryaboshtan Yu.L.,Mf Stelmakh Polyus Research And Development Institute | Mikaelyan G.T.,OJSC Research and Manufacturing Enterprise Inject
Quantum Electronics | Year: 2010

An 8-μm quantum cascade laser is fabricated by the metalorganic vapour phase epitaxy method. A scheme of vertical transitions in a structure consisting of three quantum wells is used. The laser operates in a pulsed regime at temperatures up to 250 K. The threshold current density was about 3 kA cm -2 at 77 K and increased up to 6 kA cm-2 at 250 K. The 1-μs pulse power in the multimode regime was 45 mW at 77 K. © 2010 Kvantovaya Elektronika and Turpion Ltd. Source


Vinokurov D.A.,RAS Ioffe Physical - Technical Institute | Ladugin M.A.,Mf Stelmakh Polyus Research And Development Institute | Lyutetskii A.V.,RAS Ioffe Physical - Technical Institute | Marmalyuk A.A.,Mf Stelmakh Polyus Research And Development Institute | And 9 more authors.
Semiconductors | Year: 2010

Epitaxially stacked tunnel-junction laser heterostructures were grown by hydride metalorganic vapor-phase epitaxy in the system of AlGaAs/GaAs/InGaAs alloys. Based on such structures, mesa stripe lasers with an aperture of 150 × 7 μ were fabricated. The possibility of controlling the lasing wavelength by varying the active region thickness in each tunnel-junction laser structure was demonstrated. Independent two-band lasing at wavelengths of 914 and 925 nm (the difference frequency is 2.3 THz) was achieved at a maximum optical radiation power of 20 W in each band of the epitaxially stacked tunnel-junction semiconductor laser. © 2010 Pleiades Publishing, Ltd. Source


Bogdanovich M.V.,B. I. Stepanov Institute of Physics | Kabanov V.V.,B. I. Stepanov Institute of Physics | Lebiadok Y.V.,B. I. Stepanov Institute of Physics | Ryabtsev A.G.,B. I. Stepanov Institute of Physics | And 5 more authors.
Optics and Laser Technology | Year: 2013

The optimal value of the output mirror reflection coefficient providing the maximum output power under a constant level of electrical power consumption and the maximum external (slope) lasing efficiency for powerful InGaAs/AlGaAs laser diode arrays (LDA) has been estimated experimentally and theoretically. The LDA active layer overheating and amplified spontaneous emission have been taken into account. For advanced LDAs with the thermal resistance of 0.2 K/W and the internal optical loss of 0.5 cm -1 the optimal output mirror reflection coefficient is equal to 20%. This value is shifted to the high output mirror reflection coefficient side with a decrease of the LDA excitation level, the LDA thermal resistivity and the internal optical loss. It has been shown that the right selection of the output mirror reflection coefficient optimal value provides the LDA operation with 20% excess of the lasing output power and 10% excess of the external lasing efficiency. © 2012 Elsevier Ltd. Source


Davydova E.I.,Mf Stelmakh Polyus Research And Development Institute | Konyaev V.P.,Mf Stelmakh Polyus Research And Development Institute | Ladugin M.A.,Mf Stelmakh Polyus Research And Development Institute | Lebedeva E.I.,Mf Stelmakh Polyus Research And Development Institute | And 7 more authors.
Quantum Electronics | Year: 2010

We have fabricated and investigated linear arrays of single laser diodes (LDs) and epitaxially stacked double LDs based on AlGaAs/GaAs heterostructures emitting in the 808-nm range. The power - current characteristic of the double-LD bars has a slope of 2.18 W A-1 which is almost twice that of the single-LD bars (1.16 W A-1). The voltage drop across the former bars is also larger. At a pump current of 60 A, the output power of 5-mm-long arrays of LDs based on epitaxially stacked double heterostructures is 100 W under quasi-cw pumping, which is a factor of 1.8 above that of the single-LD bars under identical conditions. © 2010 Kvantovaya Elektronika and Turpion Ltd. Source


Davydova E.I.,Mf Stelmakh Polyus Research And Development Institute | Konyaev V.P.,Mf Stelmakh Polyus Research And Development Institute | Ladugin M.A.,Mf Stelmakh Polyus Research And Development Institute | Lebedeva E.I.,Mf Stelmakh Polyus Research And Development Institute | And 7 more authors.
Quantum Electronics | Year: 2010

AlGaAs/GaAs double laser heterostructures containing two different active regions have been grown by metalorganic vapour phase epitaxy in a single growth process, and their properties have been studied. A typical slope of their power-current curves is 2.3 W A-1 which is almost twice that for a laser diode (1.2 W A -1). We demonstrate lasing of the emitter regions of the dual-wavelength lasers in the range 800-815 nm, with a separation between the peaks of ∼ 7 nm. The observed effect of pump current on the lasing wavelength of the active regions in the dual-wavelength and single lasers indicates that the emitter region farther away from the heat sink is more sensitive to pump current variations. © 2010 Kvantovaya Elektronika and Turpion Ltd. Source

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