Fremont, CA, United States
Fremont, CA, United States

STATS ChipPAC STATS ChipPAC Ltd. is a service provider of full turnkey semiconductor packaging design, bump, probe, assembly, test and distribution solutions. STATS ChipPAC provides semiconductor packaging and test services to a diversified global customer base servicing the computing, communications and consumer markets. STATS ChipPAC’s customers include some of the largest semiconductor companies in the world.Headquartered in Singapore, STATS ChipPAC has manufacturing facilities in South Korea, Singapore, China, Malaysia and Taiwan .STATS ChipPAC customer support offices are located in the United States . Offices outside the United States are located in Singapore, South Korea, China, Malaysia, Taiwan, Japan, Switzerland, the United Kingdom and the Netherlands. In addition, STATS ChipPAC has research and development centers in South Korea, Singapore, Malaysia, China, Taiwan and the United States.STATS ChipPAC is listed on the Singapore Exchange Securities Trading Limited . Wikipedia.

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A semiconductor device has a plurality of semiconductor die. A first prefabricated insulating film is disposed over the semiconductor die. A conductive layer is formed over the first prefabricated insulating film. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The first prefabricated insulating film is laminated over the semiconductor die. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The semiconductor die is embedded within the first prefabricated insulating film with the first prefabricated insulating film covering first and side surfaces of the semiconductor die. The interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A portion of the first prefabricated insulating film is removed after disposing the first prefabricated insulating film over the semiconductor die. A second prefabricated insulating film is disposed over the first prefabricated insulating film.


A semiconductor device has a trench formed in a substrate. The trench has tapered sidewalls and depth of 10-120 micrometers. A first insulating layer is conformally applied over the substrate and into the trench. An insulating material, such as polymer, is deposited over the first insulating layer in the trench. A first conductive layer is formed over the insulating material. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and electrically contacts the first conductive layer. The first and second conductive layers are isolated from the substrate by the insulating material in the trench. A third insulating layer is formed over the second insulating layer and second conductive layer. The first and second conductive layers are coiled over the substrate to exhibit inductive properties.


A semiconductor device has a semiconductor die mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A first insulating layer is formed over a portion of the encapsulant within an interconnect site outside a footprint of the semiconductor die. An opening is formed through the first insulating layer within the interconnect site to expose the encapsulant. The opening can be ring-shaped or vias around the interconnect site and within a central region of the interconnect site to expose the encapsulant. A first conductive layer is formed over the first insulating layer to follow a contour of the first insulating layer. A second conductive layer is formed over the first conductive layer and exposed encapsulant. A second insulating layer is formed over the second conductive layer. A bump is formed over the second conductive layer in the interconnect site.


Patent
STATS CHIPPAC Ltd. | Date: 2016-07-25

A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A first conductive layer is formed with an antenna over a first surface of the encapsulant. A second conductive layer is formed with a ground plane over a second surface of the encapsulant with the antenna located within a footprint of the ground plane. A conductive bump is formed on the ground plane. A third conductive layer is formed over the first surface of the encapsulant. A fourth conductive layer is formed over the second surface of the encapsulant. A conductive via is disposed adjacent to the semiconductor die prior to depositing the encapsulant. The antenna is coupled to the semiconductor die through the conductive via. The antenna is formed with the conductive via between the antenna and semiconductor die. A PCB unit is disposed in the encapsulant.


A semiconductor device comprises a carrier including an adhesive disposed over the carrier. The semiconductor device further comprises a semiconductor wafer including a plurality of semiconductor die separated by a non-active region. A plurality of bumps is formed over the semiconductor die. The semiconductor wafer is mounted to the carrier with the adhesive disposed around the plurality of bumps. Irradiated energy is applied to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die. The semiconductor wafer is singulated along the modified region by applying stress to the semiconductor wafer. The adhesive is removed from around the plurality of bumps after singulating the semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die comprising through silicon vias. The modified region optionally includes a plurality of vertically stacked modified regions.


A semiconductor device comprises a semiconductor die including a conductive layer. A first insulating layer is formed over the semiconductor die and conductive layer. An encapsulant is disposed over the semiconductor die. A compliant island is formed over the first insulating layer. An interconnect structure is formed over the compliant island. An under bump metallization (UBM) is formed over the compliant island. The compliant island includes a diameter greater than 5 m larger than a diameter of the UBM. An opening is formed in the compliant island over the conductive layer. A second insulating layer is formed over the first insulating layer and compliant island. A third insulating layer is formed over an interface between the semiconductor die and the encapsulant. An opening is formed in the third insulating layer over the encapsulant for stress relief.


Approaches, techniques, and mechanisms are disclosed for a method of manufacturing an integrated circuit package with a single-layer substrate. In an embodiment, the inventive integrated circuit package not only reduces manufacture cost but also improves reliability and miniaturization. According to an embodiment, a single-layer substrate is manufactured using non-photoimageable dielectric (NPID) material that is different from other dielectric materials, such as PrePreg (PPG) materials, copper clad laminates (CCL), solder resists (SR), and so forth, that are used in conventional substrates. A single-layer substrate manufactured using the NPID material provides a low cost solution by, among other aspects, eliminating certain process steps, such as a laser drill process, that are often used to manufacture the other substrates. According to an embodiment, the NPID material utilized for the described techniques and systems may feature a low coefficient of thermal expansion (CTE), a high glass transition temperature (Tg), and/or a high modulus compared to the other dielectric materials. Such features improve reliability because of, among other aspects, improved trace protection and peel strength, thereby enhancing adhesion between traces (e.g., of copper (Cu), etc.) and dielectric materials. In an embodiment, such features also improve miniaturization because, for example, the NPID material may allow formation of traces with reduced geometry.


A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.


A semiconductor device has a substrate with a stiffening layer disposed over the substrate. The substrate has a circular shape or rectangular shape. A plurality of semiconductor die is disposed over a portion of the substrate while leaving an open area of the substrate devoid of the semiconductor die. The open area of the substrate devoid of the semiconductor die includes a central area or interstitial locations among the semiconductor die. The semiconductor die are disposed around a perimeter of the substrate. An encapsulant is deposited over the semiconductor die and substrate. The substrate is removed and an interconnect structure is formed over the semiconductor die. By leaving the predetermined areas of the substrate devoid of semiconductor die, the warping effect of any mismatch between the CTE of the semiconductor die and the CTE of the encapsulant on the reconstituted wafer after removal of the substrate is reduced.


An integrated circuit packaging system and method of manufacture thereof includes: a dielectric core having an embedded pad; a top solder resist layer on the dielectric core, a pad top surface of the embedded pad below the top solder resist layer; a device interconnect attached to the embedded pad; and an integrated circuit device having an interconnect pillar, the interconnect pillar attached to the device interconnect for mounting the integrated circuit device to the dielectric core.

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