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Mesheryakov S.A.,State Science Research Experimental Institute of Technical Information Protection Problems
Journal of Communications Technology and Electronics | Year: 2014

The energy, power, and temperature characteristics of semiconductor p-n junction structure and the structure with a Schottky barrier are simulated under the actions of a high-power microwave and video pulses with different polarities. The results of simulations are presented. The temperature fields are comparatively analyzed using the numerical model of drift-diffusion thermal approximation and the interval estimates of the energy equivalence under the actions of pulses of different types. © 2014 Pleiades Publishing, Inc. Source


Berdyshev A.V.,State Science Research Experimental Institute of Technical Information Protection Problems | Mesheryakov S.A.,State Science Research Experimental Institute of Technical Information Protection Problems
Journal of Communications Technology and Electronics | Year: 2013

The effect of the signal that is induced by the external ultrashort-pulse electromagnetic radiation on the physical processes in the silicon p-n junctions of the input semiconductor circuits of the TTL ICs is numerically simulated. It is demonstrated that the modulation of the base conductivity, avalanche generation, and thermal heating predominantly affect the current flow under such conditions. The possible types of failures of the TTL ICs in the presence of the ultrashort-pulse electromagnetic radiation are determined. © 2013 Pleiades Publishing, Ltd. Source


Mesheryakov S.A.,State Science Research Experimental Institute of Technical Information Protection Problems | Berdyshev A.V.,State Science Research Experimental Institute of Technical Information Protection Problems
Journal of Communications Technology and Electronics | Year: 2013

A numerical electrothermal model of the action of electromagnetic radiation (EMR) pulses on discrete electromagnetic devices and IC elements is presented. A silicon high-frequency diode with the Schottky barrier is used as an example in the numerical calculation of electro- and thermophysical processes at various energy and power parameters of the EMR pulse. © 2013 Pleiades Publishing, Inc. Source

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