State Key Laboratory of PV Science and Technology SKL PVST

Changzhou, China

State Key Laboratory of PV Science and Technology SKL PVST

Changzhou, China
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Liu W.,CAS Shanghai Institute of Microsystem and Information Technology | Liu W.,University of Chinese Academy of Sciences | Zhang L.,CAS Shanghai Institute of Microsystem and Information Technology | Chen R.,CAS Shanghai Institute of Microsystem and Information Technology | And 5 more authors.
Journal of Applied Physics | Year: 2016

Underdense hydrogenated amorphous silicon (a-Si:H) prepared by plasma-enhanced chemical vapor deposition was used as a passivation layer in silicon heterojunction (SHJ) solar cells. By reducing the thickness of the underdense a-Si:H passivation layer from 15 nm to 5 nm, the open circuit voltage (Voc) of the corresponding SHJ solar cell increased significantly from 724.3 mV to 738.6 mV. For comparison, a widely used transition-zone a-Si:H passivation layer was also examined, but reducing its thickness from 15 nm to 5 nm resulted in a continuous Voc reduction, from 724.1 mV to 704.3 mV. The highest efficiency was achieved using a 5-nm-thick underdense a-Si:H passivation layer. We propose that this advantageous property of underdense a-Si:H reflects its microstructural characteristics. While the porosity of a-Si:H layer enables H penetration into the amorphous network and the a-Si:H/c-Si interface, a high degree of disorder inhibits the formation of the epitaxial layer at the a-Si:H/c-Si interface during post-doping layer deposition. © 2016 Author(s).


Bian J.,CAS Shanghai Institute of Microsystem and Information Technology | Zhang L.,CAS Shanghai Institute of Microsystem and Information Technology | Guo W.,State Key Laboratory of PV Science and Technology SKL PVST | Wang D.,State Key Laboratory of PV Science and Technology SKL PVST | And 2 more authors.
Applied Physics Express | Year: 2014

To improve the passivation effect at a-Si:H/c-Si interface in heterojunction (HJ) solar cells, ultrathin SiOx layers with a thickness of approximately 2 nm were pre-formed on c-Si surfaces in chemical solutions. It was demonstrated that the SiOx layers pre-formed in hot de-ionized water and hydrochloric acid solutions improve effective carrier lifetime, and it is further enhanced through a post annealing process. When the thin SiOx layers were applied to HJ solar cells, increase in both Voc and Jsc was achieved, implying the improved interface quality for these HJ solar cells, as compared with the reference without the SiOx layer. © 2014 The Japan Society of Applied Physics.


Liu W.,CAS Shanghai Institute of Microsystem and Information Technology | Liu W.,University of Chinese Academy of Sciences | Zhang L.,CAS Shanghai Institute of Microsystem and Information Technology | Meng F.,CAS Shanghai Institute of Microsystem and Information Technology | And 5 more authors.
Scripta Materialia | Year: 2015

Microstructures of voids in a-Si:H layers on the surface of c-Si wafers were quantitatively analyzed by combining spectroscopic ellipsometry and Fourier transform infrared spectroscopy. A diameter (D) from 0.52 to 2.11 nm and a number density (Nvoids) from 8.4 × 1018 to 5.4 × 1020 cm-3 were estimated. It was demonstrated large-size voids were formed owing to the network relaxation caused by H+ etching. Measurements of the minority carrier lifetime revealed both D and Nvoids affect the passivation performance for a c-Si surface. © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

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