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Wu L.J.,State Key Laboratory of Electronic Thin Films and Integrated Devices of UESTC | Wu L.J.,Chengdu University of Information Technology | Zhang W.T.,State Key Laboratory of Electronic Thin Films and Integrated Devices of UESTC | Qiao M.,State Key Laboratory of Electronic Thin Films and Integrated Devices of UESTC | And 2 more authors.
Electronics Letters | Year: 2012

A novel high concentration linear variable doping interface thin silicon layer (TSL) silicon-on-insulator (SOI) super junction (SJ) LDMOS is proposed. The design of the linear variable doping can deplete the high drift concentration. The proposed structure uses a TSL to achieve charge balance and eliminate substrate-assisted depletion effect. The dielectric electric field (E I) and the breakdown voltage (BV) of the TSL SOI SJ are 530V/μm and 552V with 30m length drift region and 1m-thick dielectric layer, respectively, and the specific on-resistance (R on, sp) is 0.03403Ω·cm 2 and FOM (FOM=BV 2/R on,sp) is 8.95MW/cm 2, when gate voltage is 5V. © 2012 The Institution of Engineering and Technology. Source

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