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Cui Y.,Northwestern Polytechnical University | Hou X.,State Key Laboratory of Electronic Thin Film and Integrated Devices
2010 Asia-Pacific Symposium on Electromagnetic Compatibility, APEMC 2010 | Year: 2010

In this paper, we present an equivalent circuit (EC) based technique which combined with the numerical method to optimize the EBG structures with simple square-loop frequency selective surfaces (FSSs), they can take on in-phase reflection characteristic in some broad-band electromagnetic band gap (EBG) structures. By using the multilayered FSSs in this type of EBG structure, the surface waves and current could stopped effectively. The geometry and working of the antenna with this EBG structure are detailed and the design method is proposed. © 2010 IEEE. Source


Zhou G.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Zhou G.,Georgia Institute of Technology | He W.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Wang S.,State Key Laboratory of Electronic Thin Film and Integrated Devices | And 2 more authors.
Materials Letters | Year: 2013

A novel porous Ni-P alloy thin-film was developed to fabricate embedded resistor through the electroless deposition by introducing manganese ion in electrolyte solutions. SEM images demonstrated high density of pores or holes with diameters ranging from 0.1 μm to 3.0 μm was formed in Ni-P thin-film when the concentrations of MnSO4·H2O changed from 0 to 50 g/dm3. Resistance testing results revealed a significant increasing of resistance as the concentration of MnSO4·H 2O increases and thereby a quadratical relationship between them was primly fitted with low deviation of 5.75%. Moreover, to explore the application practice of this porous thin-film in embedded resistor, distribution experiment was designed to investigate resistance tolerance using maximum deviation method. Tolerances under 15% indicated this porous Ni-P thin-film is a very practical candidate to fabricate embedded resistors. © 2013 Elsevier B.V. Source


Ji H.N.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Lan Z.W.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Xu Z.Y.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Zhang H.W.,State Key Laboratory of Electronic Thin Film and Integrated Devices | And 2 more authors.
IEEE Transactions on Applied Superconductivity | Year: 2014

Low loss MnZn power ferrites with different second milling times were prepared via the conventional ceramic process. The microstructures, magnetic properties, temperature dependence, and improved Steinmetz parameters of the sintered ceramics have been analyzed. The results show that properly increasing second milling time can remarkably increase the magnetic properties and temperature dependence. When the second milling time is two hours, the initial permeability and saturation magnetic induction reach their maximum, while the total power loss achieves its minimum value, which is lower than 430 kW/m3 at wide temperature range (25 °C ∼ 120 °C). The improved Steinmetz parameters reveal that the absolute value of ct0, ct1 and ct2 of all samples present decreasing trends along with the increasing of frequency. Moreover, the minimum power loss temperature moves to a lower temperature, the total effect of temperature on power loss becomes smaller, and the temperature stability of low loss MnZn power ferrites becomes better. © 2015 IEEE. Source


Zhang N.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Zhang N.,University of Electronic Science and Technology of China | Zhou P.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Zhou P.,University of Electronic Science and Technology of China | And 8 more authors.
Optics Communications | Year: 2015

We have designed and fabricated broadband metamaterial absorbers working in the mid-infrared regime by employing the multilayered metal-dielectric-metal resonant stacks. Magnetic resonance is excited in each resonant stack, and the absorption peak wavelength is tuned by the dielectric constant of the dielectric layer. By stacking several resonant stacks with different dielectric layers, the absorption bandwidth can be effectively broadened through the hybridization of magnetic resonances in all resonant stacks. The presented design approach is an effective complement for constructing broadband metamaterial absorbers, and also meaningful in the design of other photonic devices. © 2014 Elsevier B.V. All rights reserved. Source


Li S.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Li S.,University of Electronic Science and Technology of China | Zhang H.-W.,State Key Laboratory of Electronic Thin Film and Integrated Devices | Zhang H.-W.,University of Electronic Science and Technology of China | And 12 more authors.
Infrared Physics and Technology | Year: 2010

Utilizing a series of micro-fabrication processes for terahertz meta materials, we fabricated three geometries of split-ring resonators: a circular geometry and two elliptical geometries. The samples were measured by the transmission spectroscopy in the terahertz time domain. Comparing these spectra, we found that these plots clearly reveal the lower frequency LC resonances and the higher frequency dipole resonances, meanwhile, the coupling of the LC and dipole resonance has an important influence on the overall response. It is shown that we can design the LC and dipole resonance frequency, and regulate the coupling of the LC and dipole resonance to adjust the overall response. A simple transmission-line RLC circuit model is used to help us understand this coupling behavior and the extent of its effects. © 2009. Source

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