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Belyaev A.E.,Ukrainian Academy of Sciences | Boltovets N.S.,Orion State Enterprise Research Institute | Konakova R.V.,Ukrainian Academy of Sciences | Milenin V.V.,Ukrainian Academy of Sciences | And 2 more authors.
Semiconductors | Year: 2010

The effect of ionizing radiation of 60Co γ-ray photons in the dose range 104-2 × 109 rad on metal-semiconductor Au-ZrBx-AlGaN/GaN and Au-TiBx-Al-Ti-n-GaN contacts and Au-ZrBx-n-GaN Schottky diodes is examined. The contacts with the TiBx and ZrBx diffusion barriers do not degrade under the effect of ionizing radiation if the dose does not exceed 108 rad. The Au-ZrBx-n-GaN Schottky diodes remain stable in the dose range 104-106 rad. As the radiation dose is increased to ≳108 rad, the damage to the contact metallization increases and is accompanied by formation of through pores, which is conducive to accumulation of oxygen at the Au-ZrBx(TiBx) interfaces and to an increase in mass transport of atoms in contact-forming layers. In this case, irradiation-caused degradation of the Schottky diodes is observed. Possible mechanisms of radiation damage of contact structures with diffusion barriers are analyzed. © 2010 Pleiades Publishing, Ltd. Source


Belyaev A.E.,Ukrainian Academy of Sciences | Boltovets N.S.,Orion State Enterprise Research Institute | Bobyl A.V.,RAS Ioffe Physical - Technical Institute | Ivanov V.N.,Orion State Enterprise Research Institute | And 9 more authors.
Semiconductors | Year: 2010

The radiation resistance of Au-Pd-Ti-Pd-n++-InP ohmic contacts and Au-TiBx-n-n+-n++-InP barrier contacts-both initial and subjected to a rapid thermal annealing and irradiated with 60Co γ-ray photons with doses as high as 109 R-has been studied. Before and after external effects, the electrical characteristics of the barrier and ohmic contacts, distribution profiles for components, and phase composition in the metallization layers have been measured. In ohmic Pd-Ti-Pd-Au contacts subjected to rapid thermal annealing and irradiation, a significant distortion of the layered structure of metallization occurs; this distortion is caused by the thermal and irradiation-stimulated transport of Pd over the grain boundaries in polycrystalline Ti and Au films. However, the specific contact resistance ρc does not change appreciably, which is related to a comparatively unvaried composition of the contact-forming layer at the Pd-n+-InP interface. In the initial sample and the sample subjected to the rapid thermal annealing at T = 400°C with the Au-TiBx-n-n+-n++-InP barrier contacts and irradiated with the dose as high as 2 × 108 R, a layered structure of metallization is retained. After irradiation with the dose as high as 109 R, in the samples subjected to a rapid thermal annealing at T = 400°C, the layered structure of metallization becomes completely distorted; however, this structure is retained in the initial sample. The electrical properties of the contact structure appreciably degrade only after irradiation of the sample preliminarily subjected to a rapid thermal annealing at T = 400°C. © 2010 Pleiades Publishing, Ltd. Source

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