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Rožnov pod Radhoštěm, Czech Republic

Biolek Z.,SSIER | Biolek D.,University of Defence at Brno | Biolkova V.,Brno University of Technology
IEEE Transactions on Circuits and Systems II: Express Briefs | Year: 2012

It is well known that the memristor driven by a periodical voltage or current exhibits pinched v {-} i hysteresis loop. A novel finding is published in this brief, namely, that the area within the loop is directly related to the value of action potential, which was introduced by Leon Chua in his original work from 1971. © 2004-2012 IEEE. Source


Biolek D.,University of Defense | Biolek D.,Brno University of Technology | Biolek Z.,SSIER | Biolkova V.,Brno University of Technology
Radioengineering | Year: 2011

Two behavioral models of memcapacitor are developed and implemented in SPICE-compatible simulators. Both models are related to the charge-controlled memcapacitor, the capacitance of which is controlled by the amount of electric charge conveyed through it. The first model starts from the state description of memcapacitor whereas the second one uses the memcapacitor constitutive relation as the only input data. Results of transient analyses clearly show the basic fingerprints of the memcapacitor. Source


Biolek D.,Brno University of Technology | Biolek Z.,SSIER | Biolkova V.,Brno University of Technology
Electronics Letters | Year: 2011

Recently, novel findings have been published, according to which some mem-systems excited by harmonic signals can be characterised by the so-called 'non-crossing-type pinched hysteretic loops'. Presented is a proof that this phenomenon cannot occur in ideal memristors, memcapacitors and meminductors which are defined axiomatically via the corresponding constitutive relations or via other equivalent characteristics, and that the 'crossing-type hysteretic loop' is thus one of their typical fingerprints. © 2011 The Institution of Engineering and Technology. Source


Valsa J.,Brno University of Technology | Biolek D.,Brno University of Technology | Biolek D.,University of Defence at Brno | Biolek Z.,SSIER
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields | Year: 2011

The paper presents a working electrical scheme modeling the memristor. The scheme allows experimenting with the model under various testing signals. The user can use it to verify the theoretical presumptions about the memristor properties. Examples of several typical measurements are shown. © 2010 John Wiley & Sons, Ltd. Source


Biolek Z.,SSIER | Biolek D.,University of Defence at Brno | Biolek D.,Brno University of Technology | Biolkova V.,Brno University of Technology
IEEE Transactions on Circuits and Systems I: Regular Papers | Year: 2012

The analysis of complicated circuits containing nonlinear electrical elements is commonly performed via numerical algorithms of simulation programs. However, an analytical solution can be preferable to the numerical approach, particularly for the needs of basic research. This paper introduces a methodology of the analytical solution of voltage/current response of the memristor to its excitation from ideal current/voltage source, with the memristor being characterized by the memristance-charge or memductance-flux relationships. The procedure is explained on examples of a TiO2 memristor with linear dopant drift and of a hydraulic memristor. © 2012 IEEE. Source

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