Newport, United Kingdom
Newport, United Kingdom

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Patent
SPTS Technologies | Date: 2017-01-25

According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of:positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenum, germanium, SiGe and tungsten, the second material is silicon dioxide or silicon nitride, and at least one surface of the first material is exposed so as to be contactable by a gas phase chemical etchant; andetching the first material with a noble gas fluoride or halogen fluoride gas phase chemical etchant;the method further comprising the step of exposing the etch chamber to water vapour so that the step of etching the first material is performed in the presence of water vapour.


Grant
Agency: Cordis | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 87.61M | Year: 2015

The key objective of PowerBase Enhanced substrates and GaN pilot lines enabling compact power applications is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment growth in the European Union. The project PowerBase aims to contribute to the industrial ambition of value creation in Europe and fully supports this vision by addressing key topics of ECSEL multi annual strategic plan 2014. By positioning PowerBase as innovation action a clear focus on exploitation of the expected result is primary goal. To expand the limits in current power semiconductor technologies the project focuses on setting up a qualified wide band gap GaN technology Pilot line, on expanding the limits of todays silicon based substrate materials for power semiconductors, improving manufacturing efficiency by innovative automation, setting up of a GaN compatible chip embedding pilot line and demonstrating innovation potential in leading compact power application domains. PowerBase is a project proposal with a vertical supply chain involved with contributions from partners in 7 European countries. This spans expertise from raw material research, process innovation, pilot line, assembly innovation and pilot line up to various application domains representing enhanced smart systems. The supporting partners consist of market leaders in their domain, having excellent technological background, which are fully committed to achieve the very challenging project goals. The project PowerBase aims to have significant impact on mart regions. High tech jobs in the area of semiconductor technologies and micro/nano electronics in general are expressed core competences of the regions Austria: Carinthia, Styria, Germany: Sachsen, Bavaria and many other countries/ regions involved.


Grant
Agency: Cordis | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 48.05M | Year: 2015

The goal of the InForMed project is to establish an integrated pilot line for medical devices. The pilot line includes micro-fabrication, assembly and even the fabrication of smart catheters. The heart of this chain is the micro-fabrication and assembly facility of Philips Innovation Services, which will be qualified for small/medium-scale production of medical devices. The pilot facility will be open to other users for pilot production and product validation. It is the aim of the pilot line: to safeguard and consolidate Europes strong position in traditional medical diagnostic equipment, to enable emerging markets - especially in smart minimally invasive instruments and point-of-care diagnostic equipment - and to stimulate the development of entirely new markets, by providing an industrial micro-fabrication and assembly facility where new materials can be processed and assembled. The pilot line will be integrated in a complete innovation value chain from technology concept to high-volume production and system qualification. Protocols will be developed to ensure an efficient technology transfer between the different links in the value chain. Six challenging demonstrators products will be realized that address societal challenges in: Hospital and Heuristic Care and Home care and well-being, and demonstrate the trend towards Smart Health solutions.


Patent
SPTS Technologies | Date: 2016-06-01

According to the invention there is provided a plasma etching apparatus for etching a substrate comprising:at least one chamber;a substrate support positioned within the at least one chamber; anda plasma production device for producing a plasma for use in etching the substrate;in which the plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.


Patent
SPTS Technologies | Date: 2016-06-23

An ICP plasma etching apparatus for etching a substrate includes at least one chamber, a substrate support positioned within the chamber, a plasma production device for producing a plasma for use in etching the substrate, and a protective structure which surrounds the substrate support so that, in use, a peripheral portion of the substrate is protected from unwanted deposition of material. The protective structure is arranged to be electrically biased and is formed from a metallic material so that metallic material can be sputtered from the protective structure onto an interior surface of the chamber to adhere particulate material to the interior surface.


Patent
SPTS Technologies | Date: 2016-10-05

1. A method of depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields;in which a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.


Patent
SPTS Technologies | Date: 2016-02-05

A plasma producing apparatus for plasma processing a substrate Includes a chamber having an interior surface, a plasma production device for producing an inductively coupled plasma within the chamber, a substrate support for supporting the substrate during plasma processing, and a Faraday shield disposed within the chamber for shielding at least part of the interior surface from material removed from the substrate by the plasma processing. The plasma production device includes an antenna and a RF power supply for supplying RF power to the antenna with a polarity which is alternated at a frequency of less than or equal to 1000 Hz.


Patent
SPTS Technologies | Date: 2016-03-30

A method is for depositing a dielectric material on to a substrate in a chamber by pulsed DC magnetron sputtering with a pulsed DC magnetron device which produces one or more primary magnetic fields. In the method, a sputtering material is sputtered from a target, wherein the target and the substrate are separated by a gap in the range 2.5 to 10 cm and a secondary magnetic field is produced within the chamber which causes a plasma produced by the pulsed DC magnetron device to expand towards one or more walls of the chamber.


Patent
SPTS Technologies | Date: 2016-09-14

According to the invention there is provided a plasma-enhanced chemical vapour deposition (PE-CVD) apparatus comprising:a chamber comprising a circumferential pumping channel;a substrate support disposed within the chamber;one or more gas inlets for introducing gas into the chamber;a plasma production device for producing a plasma in the chamber; andan upper and a lower element positioned in the chamber;wherein:the upper element is spaced apart from the substrate support to confine the plasma and to define a first circumferential pumping gap, and the upper element acts as a radially inward wall of the circumferential pumping channel; andthe upper and lower elements are radially spaced apart to define a second circumferential pumping gap which acts as an entrance to the circumferential pumping channel, in which the second circumferential pumping gap is wider than the first circumferential pumping gap.


Patent
SPTS Technologies | Date: 2016-05-04

According to the invention there is a clamp assembly for clamping an outer peripheral portion of a substrate to a support in a plasma processing chamber of the type in which an RF bias power is applied to the support during the plasma processing of the substrate, the clamp assembly comprising:an outer clamp member; andan inner clamp member which is received by the outer clamp member, the inner clamp member defining an aperture which exposes the substrate to the plasma processing;in which the outer clamp member has an inner portion terminating in an inner edge, wherein the inner portion is spaced apart from the inner clamp member.

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