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Newport, United Kingdom

Patent
SPTS Technologies | Date: 2014-12-19

A method of etching a feature in a substrate includes forming a mask structure over the substrate, the mask structure defining at least one re-entrant opening, etching the substrate through the opening to form the feature using a cyclic etch and deposition process, and removing the mask.


Patent
SPTS Technologies | Date: 2014-11-04

According to the invention there is a method of depositing SiO


Patent
SPTS Technologies | Date: 2015-02-06

A method is for processing a substrate by physical vapour deposition (PVD). In the method, the substrate is supplied with a cooling gas so that during the PVD process, the substrate is lifted from a substrate support.


Patent
SPTS Technologies | Date: 2015-06-08

A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers comprise compressive layers which are subject to a compressive stress, and tensile layers which are subject to a tensile stress; and there are at least two spaced apart tensile layers which are each adjacent to one or more compressive layers.


Patent
SPTS Technologies | Date: 2015-04-03

A method is for etching a semiconductor substrate to reveal one or more features buried in the substrate. The method includes performing a first etch step using a plasma in which a bias power is applied to the substrate to produce an electrical bias, performing a second etch step without a bias power or with a bias power which is lower than the bias power applied during the first etch step, and alternately repeating the first and second etch steps.

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