Newport, United Kingdom

SPTS Technologies

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Newport, United Kingdom
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Patent
SPTS Technologies | Date: 2017-09-06

According to the invention there is provided a plasma processing apparatus for plasma processing a substrate comprising: a chamber comprising one or more walls, in which a portion of the walls of the chamber is an electrode structure formed from a metallic material and configured to act as a primary winding of an inductively coupled plasma source ; and an electrical signal supply device for supplying an electrical signal that drives the electrode structure as a primary winding of an inductively coupled plasma source to sustain an inductively coupled plasma within the chamber.


Patent
SPTS Technologies | Date: 2017-01-25

According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of:positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenum, germanium, SiGe and tungsten, the second material is silicon dioxide or silicon nitride, and at least one surface of the first material is exposed so as to be contactable by a gas phase chemical etchant; andetching the first material with a noble gas fluoride or halogen fluoride gas phase chemical etchant;the method further comprising the step of exposing the etch chamber to water vapour so that the step of etching the first material is performed in the presence of water vapour.


Patent
SPTS Technologies | Date: 2017-06-28

According to the invention there is provided a method of improving adhesion between a semiconductor substrate and a dielectric layer comprising the steps of:depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process; anddepositing the dielectric layer onto the adhesion layer by a second PECVD process;in which the first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O_(2) or with O_(2) introduced into the process at a flow rate of 250sccm or less.


Patent
SPTS Technologies | Date: 2016-10-05

A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.


Patent
SPTS Technologies | Date: 2016-12-19

A method is for improving adhesion between a semiconductor substrate and a dielectric layer. The method includes depositing a silicon dioxide adhesion layer onto the semiconductor substrate by a first plasma enhanced chemical vapor deposition (PECVD) process, and depositing the dielectric layer onto the adhesion layer by a second PECVD process. The first PECVD process is performed in a gaseous atmosphere comprising tetraethyl orthosilicate (TEOS) either in the absence of O_(2 )or with O_(2 )introduced into the process at a flow rate of 250 sccm or less.


Patent
SPTS Technologies | Date: 2017-04-12

According to the invention there is provided a method of depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf, the method comprising the steps of:depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support; anddepositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, the second layer having the same composition as the first layer.


Patent
SPTS Technologies | Date: 2017-04-26

According to the invention there is provided a method of apparatus for plasma dicing a semiconductor substrate of the type forming part of a workpiece, the workpiece further comprising a carrier sheet on a frame member, wherein the carrier sheet carries the semiconductor substrate,the apparatus comprising:a chamber;a plasma production device configured to produce a plasma within the chamber suitable for dicing the semiconductor substrate;a workpiece support located in the chamber for supporting the workpiece through contact with the carrier sheet;a frame cover element configured to, in use, contact the frame member thereby clamping the carrier sheet against an auxiliary element disposed in the chamber.


Patent
SPTS Technologies | Date: 2016-10-13

An apparatus is for plasma dicing a semiconductor substrate of the type forming part of a workpiece, the workpiece further including a carrier sheet on a frame member, where the carrier sheet carries the semiconductor substrate. The apparatus includes a chamber, a plasma production device configured to produce a plasma within the chamber suitable for dicing the semiconductor substrate, a workpiece support located in the chamber for supporting the workpiece through contact with the carrier sheet, and a frame cover element configured to, in use, contact the frame member thereby clamping the carrier sheet against an auxiliary element disposed in the chamber.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 87.61M | Year: 2015

The key objective of PowerBase Enhanced substrates and GaN pilot lines enabling compact power applications is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment growth in the European Union. The project PowerBase aims to contribute to the industrial ambition of value creation in Europe and fully supports this vision by addressing key topics of ECSEL multi annual strategic plan 2014. By positioning PowerBase as innovation action a clear focus on exploitation of the expected result is primary goal. To expand the limits in current power semiconductor technologies the project focuses on setting up a qualified wide band gap GaN technology Pilot line, on expanding the limits of todays silicon based substrate materials for power semiconductors, improving manufacturing efficiency by innovative automation, setting up of a GaN compatible chip embedding pilot line and demonstrating innovation potential in leading compact power application domains. PowerBase is a project proposal with a vertical supply chain involved with contributions from partners in 7 European countries. This spans expertise from raw material research, process innovation, pilot line, assembly innovation and pilot line up to various application domains representing enhanced smart systems. The supporting partners consist of market leaders in their domain, having excellent technological background, which are fully committed to achieve the very challenging project goals. The project PowerBase aims to have significant impact on mart regions. High tech jobs in the area of semiconductor technologies and micro/nano electronics in general are expressed core competences of the regions Austria: Carinthia, Styria, Germany: Sachsen, Bavaria and many other countries/ regions involved.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 48.05M | Year: 2015

The goal of the InForMed project is to establish an integrated pilot line for medical devices. The pilot line includes micro-fabrication, assembly and even the fabrication of smart catheters. The heart of this chain is the micro-fabrication and assembly facility of Philips Innovation Services, which will be qualified for small/medium-scale production of medical devices. The pilot facility will be open to other users for pilot production and product validation. It is the aim of the pilot line: to safeguard and consolidate Europes strong position in traditional medical diagnostic equipment, to enable emerging markets - especially in smart minimally invasive instruments and point-of-care diagnostic equipment - and to stimulate the development of entirely new markets, by providing an industrial micro-fabrication and assembly facility where new materials can be processed and assembled. The pilot line will be integrated in a complete innovation value chain from technology concept to high-volume production and system qualification. Protocols will be developed to ensure an efficient technology transfer between the different links in the value chain. Six challenging demonstrators products will be realized that address societal challenges in: Hospital and Heuristic Care and Home care and well-being, and demonstrate the trend towards Smart Health solutions.

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