Pares G.,CEA Grenoble |
Karoui C.,STMicroelectronics |
Zaid A.,STMicroelectronics |
Dosseul F.,STMicroelectronics |
And 8 more authors.
Proceedings - Electronic Components and Technology Conference | Year: 2013
This work aims at answering to the 3D mega trend of silicon based platform and 3D wafer level packaging (3D-WLSiP). We focus on the development of architectures compliant with high volume markets for applications like mobile telecommunication. In this market, the silicon material will remain the key platform for 3D integration and has to offer the vertical interconnection as well as ultra-thin packages to fit into very slim electronic devices. We have designed both a mechanical demonstrator with daisy chains and a fully functional product based on a silicon interposer, focusing on forward and backward compatibility between Front-End and 3D packaging and the development of a complete set of advanced technological modules: - Thru-silicon-via interconnections (TSV) with copper via-mid technologies. - Ultra-thin (20 and 35 μm) chips fabrication using dicing before grinding (DBG) with 45° beveled edge and plasma stress release technology. - Thin chips stack on the TSV interposer before processing the back side (stacking first) with two different approaches. The first one is a flip chip integration based on Cu/SAC μ-bumps while the second is the Back-to-Face (B2F) way based on high topology RDL after permanent bonding of the chips face up on the interposer. Chip bonding is done with several materials either on die side with die attach film (DAF) or on interposer side using wafer level spin coated polymers. - Thin wafer handling using advanced temporary bonding process to handle the thin silicon interposer wafers during the integration based on BSI product from Brewer Science and ZoneBOND™ technology. Moreover different strategies of handling have been investigated involving high topology temporary bonding as well as carrier flip-flop approaches. - Thin wafer level packaging (TWLP) has been implemented sequentially on front side and back side of the thin resulting in a fully 3D-WLSiP module. Thermo-mechanical FEM simulation and first reliability assessment using mechanical demonstrator have been carried out and support the good mechanical behaviour of the integration. Electrical tests have been also completed that allows comparing the performances of F2F and B2F interconnection schemes in terms of resistances and yield at front side level but also at back side level after TSV exposure, RDL and bumps. Successful results of development loops have led to start processing a full functional product benefiting of the best process flow. © 2013 IEEE. Source
Hassen E.M.J.,CEA Grenoble |
Hassen E.M.J.,CNRS Spintronics and Technology of Components |
Viala B.,CEA Grenoble |
Cyrille M.C.,CEA Grenoble |
And 7 more authors.
Journal of Applied Physics | Year: 2012
Room temperature transport properties are reported in polycrystalline SrTiO 3-based magnetic tunnel junctions deposited by ion beam sputtering. The junctions comprise CoFeB electrodes and the SrTiO 3 barrier with thickness varied between 0.9 and 1.9 nm. Resistance area product values between 3 ω.m 2 and 22 ωμk.m 2 have been measured with a tunnel magnetoresistance ratio ranging from 3.1 to 13 at room temperature. At low barrier thickness (1.2 nm), ferromagnetic coupling between electrodes is observed, indicating the presence of defects in the structure. A post-oxidation step was found to improve transport properties at lower barrier thickness. © 2012 American Institute of Physics. Source
Djomeni L.,CEA Grenoble |
Mourier T.,CEA Grenoble |
Minoret S.,CEA Grenoble |
Fadloun S.,SPTS SAS |
And 6 more authors.
ECS Transactions | Year: 2014
This article is related to the development of a protocol for the characterization of the behavior of high aspect ratio through silicon via (TSV) during advanced three dimension (3D) integration. The time-of-flight (TOF)-SIMS profile measurement along the sidewall of the TSV with advanced samples preparations is described. This technique allows studying the efficiency of a low temperature, 200°C metallorganic chemical vapor deposition (MOCVD) titanium nitride (TiN) film as a barrier to copper diffusion into silicon. Then the thermo-mechanical stresses induced by the TSV in the surrounding silicon were studied by micro-Raman spectroscopy. Different TiN films were studied according to subsequent plasma treatments and compared with a reference deposited by ionized physical vapor deposition (i-PVD). The thermal stress in the silicon was found to decrease as a function of distance from an isolated TSV. The iPVD and MOCVD TiN barrier involved a more compressive stress than non-plasma treated MOCVD TiN. © 2014 by The Electrochemical Society. Copyright © 2014 by The Electrochemical Society. Source
CE & Mobile, ADAS Makers Look to MEMS Sensors Industry for Enhanced User Experiences at MEMS Executive Congress US 2015 Smartphone, wearables, ADAS, VR Companies Engage with MEMS Sensors Suppliers at MEMS & Sensors Industry Groups annual executive event
Home > Press > CE & Mobile, ADAS Makers Look to MEMS/Sensors Industry for Enhanced User Experiences at MEMS Executive Congress US 2015 --Smartphone, wearables, ADAS, VR Companies Engage with MEMS/Sensors Suppliers at MEMS & Sensors Industry Groups annual executive event Abstract: MEMS & Sensors Industry Groups MEMS Executive Congress® US 2015 -- held November 4-5 in Napa, CA -- gave some of the worlds leading manufacturers of virtual reality (VR), mobile handsets, wearables and advanced driver assistance systems (ADAS) a ready audience of industry execs as they shared their wants for new micro-electromechanical systems (MEMS)/sensors for future products. Xianfeng Ding, chief scientist of sensing at Huawei -- the worlds third largest mobile phone manufacturer and top 10 wearables maker -- called upon the whole MEMS/sensors industry to innovate in power management, sensing and wireless connectivity -- critical functionality in smartphones and wearables. Jack McCauley, co-founder of Oculus VR and now principal of McCauley Labs, is working on more sophisticated VR head tracking systems, all of which require MEMS to function properly. McCauley sees MEMS micro mirrors as the next potential solution. Jeff Owens, CTO and executive vice president of Delphi Automotive, shared some metrics from a coast-to-coast automated drive using a vehicle built with Delphis advanced driver assistance systems (ADAS). Delphis coast-to-coast automated drive was 3,400 miles over nine days through 15 states using 20 active safety sensors plus GPS, navigation, vision systems and driver-state monitoring. More than 99% of the distance was fully automated, and we gathered three terabytes of valuable data. With their car generally the most sophisticated piece of electronics that people own, according to Owens, growth in ADAS is one more market driving the MEMS/sensors industry forward. MEMS & Sensors Industry Group Executive Director Karen Lightman described the impetus for such active speaker-attendee engagement, The MEMS and sensors industry is providing billions of devices that define the personalized, interactive and contextual user experiences in the products we use on a daily basis. MEMS Executive Congress brings the catalysts from both sides of the equation -- the executive decision-makers buying and supplying MEMS technology -- into the room with a common purpose: driving sales of more highly differentiated products that will produce positive revenue streams. MEMS & Sensors Industry Group also celebrated innovation through three popular annual events: · MEMS & Sensors Technology Showcase is a forum through which five finalists competed for attendees votes and the title of winner. The 2015 Technology Showcase winner, Bosch eBike Systems, boosts a bicyclists human power with electric power at speeds up to 20 mph. The core components that give Bosch eBike Systems cyclists that tailwind feeling are a Bosch microprocessor and three sensors that measure a bicyclists torque, cadence and wheel speed 1,000 times per second. · Elevator Pitch Session is a Shark Tank-like event for five finalists representing a mixture of startups, established companies, researchers and individuals, each presenting products for potential funding to a panel of judges. This years Elevator Pitch winner, NXTSENS Microsystems, is designing MEMS-based timing solutions that feature ultra-stable, low jitter and temperature compensated oscillators. In addition to bragging rights, Bosch eBike Systems and NXTSENS Microsystems won one free year of MEMS & Sensors Industry Group membership. · Best in MEMS & Sensors Innovation Awards (MEMsies) -- winners were selected through an open month-long voting process for finalists in a number of categories. 2015 MEMsies winners include: · MEMS/Sensors Device of the Year: mCube -- MC3571 (1x1mm WLCSP 3-axis accelerometer) · MEMS/Sensors Engineer of the Year: Stephen Lloyd, InvenSense, for ICM-30630 (FireFly platform) · MEMS/Sensors Foundry of the Year: TSMC for MEMS foundry process(es) · MEMS/Sensors Startup of the Year: Dyna Image Corp. for optical and inertial sensors, hybrid sensors, and fusion software · MEMS/Sensors Supplier of the Year: EV Group for wafer bonders · MEMS/Sensors Designer of the Year: Eugene Hwang, Analog Devices (ADI) for ADI gyroscopes with innovative proof-mass design and transduction mechanism · MEMS/Sensors Analyst of the Year: Jérémie Bouchaud, senior director, IHS, for best market overview and understanding · MEMS/Sensors Integrator of the Year: Dyna Image and mCube -- DI5113 (light sensor and accelerometer in a 2x2mm package) · MEMS/Sensors Executive of the Year: Ben Lee, president and CEO, mCube · MEMS/Sensors Lifetime Achievement Award: Stefan Finkbeiner, CEO, Bosch Sensortec MEMS & Sensors Industry Group also inducted two new members into the MEMS Industry Group Hall of Fame: MaryAnn Maher, president and CEO, SoftMEMS, and Mike Stanley, Sensors and Actuators Group, Freescale. Upcoming Events MEMS & Sensors Industry Group will host a full-day conference track at 2016 International CES, The Internet of MEMS and Sensors, January 7, 2016 in Las Vegas, NV. MEMS Technical Congress 2016 will take place March 7-8, 2016 in Munich, Germany. MEMS Executive Congress US 2016 will take place November 9-11, 2016 at the JW Marriott Scottsdale Camelback Resort & Spa in Scottsdale, AZ. For a complete list of MEMS & Sensors Industry Group events, please visit: events.memsindustrygroup.org or contact MEMS & Sensors Industry Group via phone: 412.390.1644 or email: About MEMS & Sensors Industry Group MEMS & Sensors Industry Group is the trade association advancing MEMS and sensors across global markets. Nearly 200 companies and industry partners comprise MEMS & Sensors Industry Group, including Analog Devices, Applied Materials, ARM, Bosch, EV Group, Freescale Semiconductor, GE, GLOBALFOUNDRIES, HP, HTC Corporation, Huawei, Goertek, Infineon, Intel, InvenSense, Jawbone, Kionix, Knowles Corporation, Lenovo, OMRON Electronic Components, Qualcomm Technologies, Inc., SONY Electronics, SPTS Technologies, STMicroelectronics, Texas Instruments and TSMC. For more information, visit: www.memsindustrygroup.org. MEMS Executive Congress, MEMS Industry Group and the MEMS Industry Group logo are registered trademarks of MEMS Industry Group. All other product and company names are trademarks or registered trademarks of their respective holders. About MEMS Executive Congress Now in its eleventh year, MEMS Executive Congress is an annual event that brings together business leaders from a broad spectrum of industries: automotive, communications, consumer goods, energy/environmental, industrial and medical. It is a unique professional forum at which executives from companies designing and manufacturing MEMS/sensors technology sit side-by-side with their end-user customers in panel discussions and networking events to exchange ideas and information about the use of MEMS and sensors in commercial applications. Premier sponsors of MEMS Executive Congress US 2015 include: Platinum Sponsor EV Group; Gold Sponsors SPTS Technologies and Lam Research Corporation; Silver Sponsors Analog Devices and Freescale Semiconductor; Bronze Sponsors Applied Materials and X-Fab MEMS Foundry. Event sponsors include: Acuity, Akustica, Bosch Automotive Electronics (AE), Bosch Sensortec GmbH, Coventor, Expertech, IEEE Standards Association (IEEE-SA), MCA PR, MEMS Journal, MEMS & Technology Exchange (MNX), PNI Sensor Corporation, Solid State Technology, Teledyne DALSA, WiSpry and Yole Développement. For more information, please click If you have a comment, please us. Issuers of news releases, not 7th Wave, Inc. or Nanotechnology Now, are solely responsible for the accuracy of the content.
Djomeni L.,CEA Grenoble |
Djomeni L.,University of Strasbourg |
Mourier T.,CEA Grenoble |
Minoret S.,CEA Grenoble |
And 8 more authors.
Microelectronic Engineering | Year: 2014
This article is related to the development of a new low temperature CVD titanium nitride deposition process for the formation of a copper diffusion barrier in 3D TSV integration, using a metalorganic precursor and NH 3. The physicochemical properties of the film are studied on 300 mm silicon wafers deposited using a SPTS Technologies Sigma300 fxP™ deposition equipment. A design of experiments (DoEs) was carried out at 200 °C to check the influence of parameters such as reactor pressure, spacing (distance between the showerhead and the wafer), precursor/NH3 flow rate during deposition and NH3 flow rate during a subsequent densification plasma treatment. Responses including resistivity, uniformity, deposition rate and stress were measured. From this DoE, two process points are chosen according to expected material specifications requested from applications: a low resistivity process and a median conditions process. Then microstructure, the composition and stoichiometry of the film deposited with these process points are studied. Finally, the step coverage and continuity of the barrier in a high aspect ratio "through silicon via" (8:1, 10 μm diameter etched in 80 μm silicon) are measured and compared with a reference I-PVD process. © 2014 Published by Elsevier B.V. Source