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Huang P.,SPIL | Liu Y.,SPIL | Chao J.,SPIL | Lu C.H.,SPIL | And 6 more authors.
Microelectronic Engineering | Year: 2015

The growing need for smaller, faster devices that consume less power at low cost has led to advances in wafer level packaging. The increasingly complex process employed at OSATs has generated a need for more advanced and automated measurement techniques. In this paper, we present results from the adoption of Focused Beam Ellipsometry in the characterization of thickness and optical constants of various single and multi-layer dielectrics films, thick photoresists on both blanket and product wafers. Measurements are routinely made post-deposition, post-etch and pre- and post CMP process. Wafer stress/wafer bow measurements provide information on the mechanical integrity of the films. The rapid non-contact, non-destructive technology enables full wafer characterization and provides information in minutes on product wafers. © 2015 Elsevier B.V. All rights reserved. Source


Huang P.,SPIL | Chiu B.,SPIL | Chao J.,SPIL | Lu C.H.,SPIL | And 7 more authors.
International Conference and Exhibition on Device Packaging 2014 | Year: 2014

The growing need for smaller, faster mobile devices that consume less power at low cost has led to advances in wafer level packaging. Traditional SoC (system on chip) solutions are moving to 2.5D interposer based SiP (system in package) solutions and Outsourced Semiconductor Assembly and Test (OSAT) houses are forming key partnerships and/or developing and offering turnkey products. The increasing complexity of the process at OSATs has generated a need for more advanced and automated measurement techniques. In this paper, we present results from the adoption of Focused Beam Ellipsometry and Picosecond Ultrasonic Sonar metrology techniques during the R&D phase of package development. The intent of this effort was to identify metrology worthy of transfer to in-line monitoring during high volume production. Measurements of various dielectric layers and multi-layer metal stacks were carried out on product wafers. The rapid, non-destructive nature of the technologies enables full wafer measurements and the small measurement spot size allows for direct measurements on product wafers on small sites (16?m). © 2014 IEEE. Source


Low S.,Xilinx Inc. | Lin G.,Xilinx Inc. | Wu D.,Xilinx Inc. | Chen S.-R.,SPIL | And 5 more authors.
Proceedings - Electronic Components and Technology Conference | Year: 2015

This paper discusses the solution of silver alloy wire deionization. Silver alloy wire has been treated as an alternative material of copper wire in substrate wire bond IC. Since copper wire is too hard to apply to thinner aluminum bond-pad thickness and weaker structure because the bonding pad encountered crack or crater easily. In addition, the hardness of silver is softer than copper wire, and silver has similar characteristic properties as gold. Thus, silver alloy wire will be a better alternative material solution instead of copper wire. The mechanism of oxidization of silver had been provided also. It was due to the pre-molding plasma to enhance the oxygen to react with silver to form the oxidization of silver on the surface. Oxidization had less bonded strength to silver wire, and thus mold flow through the clearance to make a separated layer. What's more Raman spectrum showed that there should have some chemical reaction for EMC inside and outside the separation layer. First exact solution had been investigated in this study. The appropriate plasma gas involved without changing material components and processes flow which has been verified that it has the equivalent ability as original one not only to clean contaminant on substrate and surface of wafer, but also activating the strength in the bonding of EMC and solder mask of substrate was hydrogen to substitute oxygen at all. The second exact solution is applying hydrogen after using oxygen as plasma gas. The important parts are that both solutions will not cause oxidization between Ag alloy wire surface and EMC, and thus no deionization will occur. Besides, SAT and reliability had been verified with no issue while implement these two solutions. © 2015 IEEE. Source

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