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Boruzdina A.B.,Specialized Electronic Systems SPELS | Ulanova A.V.,National Research Nuclear University MEPhI | Grigor'ev N.G.,National Research Nuclear University MEPhI | Nikiforov A.Y.,National Research Nuclear University MEPhI
Russian Microelectronics | Year: 2012

A technique for investigating CMOS memory chips under exposure to ionizing radiation and the results of their radiation tests are presented. Possible mechanisms of degradation and approaches to increas- ing the radiation resistance of integrated circuits by the access time criterion are analyzed. The effect of the nonuniform degradation of the access time depending on the address has been discovered and investigated in the experiment. © Pleiades Publishing, Ltd., 2012. Source


Elesin V.V.,Specialized Electronic Systems SPELS | Nazarova G.N.,National Research Nuclear University MEPhI | Usachev N.A.,National Research Nuclear University MEPhI
Russian Microelectronics | Year: 2010

Techniques for the design of passive elements for monolithic silicon-germanium microwave ICs, tolerant to ionizing radiation have been developed with regard to specific features of the design of microwave passive elements on conducting silicon substrates. A set of the elements for operation at frequencies up to 24 GHz has been designed and fabricated, which includes transmission lines, inductances, and symmetrical transformers for application in a user library for the silicon-germanium BiCMOS technology with design rules of 0.25 |j,m. © Pleiades Publishing, Ltd., 2010. Source


Boruzdina A.B.,Specialized Electronic Systems SPELS | Ulanova A.V.,National Research Nuclear University | Petrov A.G.,Specialized Electronic Systems SPELS | Telets V.A.,National Research Nuclear University | And 2 more authors.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2013

Single Event Upsets are a growing problem in memories. Therefore, it is important to properly characterize them in order to have a clear idea of how they behave in different applications and environments. Experiments using radiation are a usual method to achieve this goal. However, events produced in memories in this way tend to accumulate over time, being difficult to determine the true number of events that have affected the system. In this paper, several experiments have been conducted to validate a technique that allows calculating the number of real events that have been produced after a radiation test. © 2013 IEEE. Source


Elesin V.V.,Specialized Electronic Systems SPELS | Chukov G.V.,National Research Nuclear University MEPhI | Gromov D.V.,Specialized Electronic Systems SPELS | Repin V.V.,MRIP Progress | Vavilov V.A.,JSC NIIME and Mikron
Russian Microelectronics | Year: 2010

The effect of ionizing radiation on the characteristics of silicon-germanium microwave ICs has been experimentally studied. Radiation tolerance criteria have been established and absolute tolerance levels of the SiGe ICs to dose and pulse ionizing radiation have been determined. Comparative analysis of the tolerance factors of the microwave ICs fabricated using different technologies is made. © Pleiades Publishing, Ltd., 2010. Source


Petrova E.V.,Specialized Electronic Systems SPELS | Komarova N.A.,Specialized Electronic Systems SPELS | Cherniak M.E.,National Research Nuclear University MEPhI | Ulanova A.V.,National Research Nuclear University MEPhI | Nikiforov A.Y.,National Research Nuclear University MEPhI
2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings | Year: 2016

The hardware/software solution for measuring parameters of optocouplers with output MOSFET transistors using a PXI-platform and NI Labview software is proposed in the article. As an example, a typical connection circuit for an optocoupler is presented and methods of an input current adjustment using a LED and data received from the TDS-2024 oscilloscope are described. © 2016 IEEE. Source

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