Specialized Electronic Systems SPELS

Moscow, Russia

Specialized Electronic Systems SPELS

Moscow, Russia
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Boruzdina A.B.,Specialized Electronic Systems SPELS | Ulanova A.V.,National Research Nuclear University | Petrov A.G.,Specialized Electronic Systems SPELS | Telets V.A.,National Research Nuclear University | And 2 more authors.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2013

Single Event Upsets are a growing problem in memories. Therefore, it is important to properly characterize them in order to have a clear idea of how they behave in different applications and environments. Experiments using radiation are a usual method to achieve this goal. However, events produced in memories in this way tend to accumulate over time, being difficult to determine the true number of events that have affected the system. In this paper, several experiments have been conducted to validate a technique that allows calculating the number of real events that have been produced after a radiation test. © 2013 IEEE.


Smolin A.A.,Specialized Electronic Systems SPELS | Sogoyan A.V.,Specialized Electronic Systems SPELS | Ulanova A.V.,Specialized Electronic Systems SPELS | Demidov A.A.,National Research Nuclear University
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2015

Analysis of TID degradation differences for MOS-structures under x-ray and gamma irradiations is provided. Correlation between spatial distribution of hole traps in the oxide and TID degradation kinetic is determined. © 2015 IEEE.


Gorbunov M.S.,Russian Academy of Sciences | Vasilegin B.V.,Russian Academy of Sciences | Antonov A.A.,Russian Academy of Sciences | Osipenko P.N.,Russian Academy of Sciences | And 8 more authors.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2011

The results on SEE sensitivity of 0.5 μm SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and 252Cf fission source) is provided for the cache. The possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques' accuracy improvement are discussed. © 2011 IEEE.


Boychenko D.V.,Specialized Electronic Systems SPELS | Kessarinskiy L.N.,Specialized Electronic Systems SPELS | Pechenkina D.V.,Specialized Electronic Systems SPELS
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2011

The influence of the electrical conditions on analog switches total dose behavior is investigated. The major difference in analog switches radiation hardness due to irradiation and measurement conditions is confirmed. © 2011 IEEE.


Boruzdina A.B.,Specialized Electronic Systems SPELS | Ulanova A.V.,National Research Nuclear University MEPhI | Grigor'ev N.G.,National Research Nuclear University MEPhI | Nikiforov A.Y.,National Research Nuclear University MEPhI
Russian Microelectronics | Year: 2012

A technique for investigating CMOS memory chips under exposure to ionizing radiation and the results of their radiation tests are presented. Possible mechanisms of degradation and approaches to increas- ing the radiation resistance of integrated circuits by the access time criterion are analyzed. The effect of the nonuniform degradation of the access time depending on the address has been discovered and investigated in the experiment. © Pleiades Publishing, Ltd., 2012.


Elesin V.V.,Specialized Electronic Systems SPELS | Chukov G.V.,National Research Nuclear University MEPhI | Gromov D.V.,Specialized Electronic Systems SPELS | Repin V.V.,MRIP Progress | Vavilov V.A.,JSC NIIME and Mikron
Russian Microelectronics | Year: 2010

The effect of ionizing radiation on the characteristics of silicon-germanium microwave ICs has been experimentally studied. Radiation tolerance criteria have been established and absolute tolerance levels of the SiGe ICs to dose and pulse ionizing radiation have been determined. Comparative analysis of the tolerance factors of the microwave ICs fabricated using different technologies is made. © Pleiades Publishing, Ltd., 2010.


Elesin V.V.,Specialized Electronic Systems SPELS | Nazarova G.N.,National Research Nuclear University MEPhI | Usachev N.A.,National Research Nuclear University MEPhI
Russian Microelectronics | Year: 2010

Techniques for the design of passive elements for monolithic silicon-germanium microwave ICs, tolerant to ionizing radiation have been developed with regard to specific features of the design of microwave passive elements on conducting silicon substrates. A set of the elements for operation at frequencies up to 24 GHz has been designed and fabricated, which includes transmission lines, inductances, and symmetrical transformers for application in a user library for the silicon-germanium BiCMOS technology with design rules of 0.25 |j,m. © Pleiades Publishing, Ltd., 2010.


Chumakov A.I.,Specialized Electronic Systems SPELS | Vasil'ev A.L.,Specialized Electronic Systems SPELS | Kozlov A.A.,Specialized Electronic Systems SPELS | Kol'tov D.O.,Specialized Electronic Systems SPELS | And 4 more authors.
Russian Microelectronics | Year: 2010

A policy is described for predicting the rate of single-event effects (SEEs) in ICs exposed to highenergy ions and heavy charged particles. The procedure involves an assessment of the radiation environment for the ICs and an estimation of their SEE sensitivity parameters, with the latter based on tests and computer simulations. © Pleiades Publishing, Ltd., 2010.


Petrova E.V.,Specialized Electronic Systems SPELS | Komarova N.A.,Specialized Electronic Systems SPELS | Cherniak M.E.,National Research Nuclear University MEPhI | Ulanova A.V.,National Research Nuclear University MEPhI | Nikiforov A.Y.,National Research Nuclear University MEPhI
2016 International Siberian Conference on Control and Communications, SIBCON 2016 - Proceedings | Year: 2016

The hardware/software solution for measuring parameters of optocouplers with output MOSFET transistors using a PXI-platform and NI Labview software is proposed in the article. As an example, a typical connection circuit for an optocoupler is presented and methods of an input current adjustment using a LED and data received from the TDS-2024 oscilloscope are described. © 2016 IEEE.


Gorbunov M.S.,Russian Academy of Sciences | Vasilegin B.V.,Russian Academy of Sciences | Antonov A.A.,Russian Academy of Sciences | Osipenko P.N.,Russian Academy of Sciences | And 8 more authors.
IEEE Transactions on Nuclear Science | Year: 2012

The results on SEE sensitivity of 0.5 μm SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and 252Cf fission source) is provided for the cache. The possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques' accuracy improvement are discussed. © 2012 IEEE.

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