South China University of Technology

en.scut.edu.cn/
Guangzhou, China

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Patent
South China University of Technology and Guangzhou Huaxinke Enterprise Co. | Date: 2017-03-22

The present invention relates to a volume pulsed deformation plasticating and conveying method and device by an eccentric rotor. The rotation of the eccentric rotor and the rolling of the rotor in the inner cavity of a stator during constant reverse revolutions cause the volume of the material between the eccentric rotor and the stator to periodically change alternatively along the axial direction and the radial direction of the stator, thereby enabling the volume pulsed deformation plasticating and conveying of the material. The volume pulsed deformation plasticating and conveying device consists of a stator, of which the inner cavity comprises multiple alternatingly disposed spiral segments and straight segments, and an eccentric rotor comprising multiple alternatingly disposed eccentric spiral segments and eccentric straight segments. The eccentric rotor is disposed in the inner cavity of the stator. The eccentric spiral segments and the eccentric straight segments of the eccentric rotor correspond one-to-one with the spiral segments and straight segments of the stator. The present invention can be used as the extruding system of an extruder or be combined with different plunger injection units to form a plasticating injection device of an injection molding machine. The present invention has a short thermo-mechanical distance for the materials, low energy consumption, and wide adaptability.


Patent
South China University of Technology and Guangzhou Huaxinke Enterprise Co. | Date: 2017-03-22

Disclosed are a power time sequence conversion method and device for manufacturing products in batches. A common power is sequentially coupled with power input ends of a plurality of execution mechanisms in different time periods, so as to provide in time order a plurality of power drives required during a batch manufacturing process of products, or provide power drives in different forms such as movements and forces to the same execution mechanism in a relaying manner in two adjacent time periods. A change gear capable of rotation and revolution is sequentially meshed with a plurality of tail end driving gears in different time periods, wherein the tail end driving gears are uniformly distributed in the circumferential direction and serve as power outputs, the revolution of the change gear is braked after each meshing to achieve the power drive of a certain execution mechanism in batch manufacturing of the products, and meanwhile, power drives in different forms such as movements and forces are provided to the same execution mechanism in a relaying manner through a torque converter. Compared with the conventional batch manufacturing of products where a plurality of independent power drives are required, the present invention has remarkable characteristics in low cost, low energy consumption, high reliability, good stability and the like.


Patent
BOE Technology Group and South China University of Technology | Date: 2017-01-25

This invention discloses a thin film transistor and the preparation method thereof, an array substrate, and a display panel, so as to solve the problem that the active layer is prone to be corroded when a metal oxide thin film transistor is produced by a back channel etching process. The preparation method comprises: forming a gate electrode metal thin film on a base substrate, and allowing the gate electrode metal thin film to form a gate electrode metal layer comprising a gate electrode by a patterning process; forming a gate electrode insulating layer on the gate electrode metal layer; forming an active layer on the gate electrode insulating layer; preparing a metal nanoparticle layer on the active layer, said metal nanoparticle layer being used as an etching protection layer; forming a source and drain electrode metal thin film on the base substrate on which the above processes are finished, and allowing the source and drain electrode metal thin film to form a source and drain electrode metal layer comprising a source electrode and a drain electrode by a patterning process, wherein the source electrode and the drain electrode cover a part of the metal nanoparticle layer; removing or oxidizing the part of the metal nanoparticle layer which is not covered by the source electrode and the drain electrode in an oxygen-containing atmosphere; and forming a passivation layer on the source and drain electrode metal layer.


Disclosed is an intelligent wheel chair control method based on a brain computer interface and an automatic driving technology. The method comprises the following steps: acquiring current pictures by webcams to perform obstacle localization; generating candidate destinations and waypoints for path planning according to the current obstacle information; performing self-localization of the wheel chair; selecting a destination by a user through the brain computer interface (BCI); planning an optimal path according to the current position of the wheel chair as a starting point and the destination selected by the user as an end point in combination with the waypoints; calculating a position error between the current position of the wheel chair and the optimal path as the feedback of a PID path tracking algorithm; and calculating a reference angular velocity and linear velocity by means of the PID path tracking algorithm and transmitting them to a PID motion controller, converting odometry data from encoders into current angular and linear velocities as a feedback of the PID motion controller, and controlling the driving of the wheel chair in real time to the destination. The intelligent wheel chair control method greatly relieves the mental burden of a user, can adapt to changes in the environment, and improves the self-care ability of patients with severe paralysis.


Patent
South China University of Technology | Date: 2017-05-03

Disclosed is a precision-positioning drive end pre-tightening device, which comprises a positioning platform (6), an actuator (14), a capacitive sensor (4), a capacitive sensor bracket (3), a pre-tightening block (12) and a film force sensor (13), wherein a sliding groove is provided in the middle of the positioning platform (6), and said pre-tightening block (12), said film force sensor (13) and said actuator (14) are provided in the sliding groove in sequence; the capacitive sensor bracket (3) is fixed on the positioning platform (6), and three connecting rods (3-1) which are connected in sequence via compliant hinges are axially provided at one end of the bracket body of the capacitive sensor bracket (3); an end surface of the capacitive sensor (4) and an upper side surface of the pre-tightening block (12) are parallel to each other, and a gap exists therebetween; and a two-stage pre-tightening device for pre-tightening the pre-tightening block (12) are also provided on the positioning platform (6). The technical means of the device is simple and easy, and the device can satisfy the requirements in related fields of precision positioning, precision and ultra-precision machining, precision operating, precision measurement, micro-electro-mechanical system, etc. for the precision-locating drive end pre-tightening device.


The present invention belongs to the technical field of the preparation of alloy materials, and discloses a high strength and toughness alloy material, a method for preparing the alloy material by semi-solid sintering, and application thereof. The preparation method comprises the three steps of mixing powders, preparing alloy powders by high-energy ball milling, and semi-solid sintering of alloy powders, the key point lies in the two-step sintering, wherein the temperature is heated to less than the initial melting temperature of the lowest-temperature melting peak of the alloy powder, under the sintering pressure conditions, and carried out a sintering densification treatment; after pressure release, the temperature is heated to the sintering temperature Ts, and maintained at the same temperature, and a semi-solid processing is carried out, with a sintering temperature Ts: Tsthe initial melting temperature of the lowest-temperature melting peak of the alloy powder, Tsthe initial melting temperature of the highest-temperature melting peak of the alloy powder. By using the present method, a variety of high melting point alloy systems comprising such as Ti-based, Ni-based alloy system, and the like are carried out a semi-solid processing, so as to obtain an alloy material with a novel microstructure such as nanocrystalline, ultra-fine crystalline, fine crystalline or bimodal structure, and the like, and having excellent performances, which can be widely used in the fields of aerospace, military, instruments and the like.


Patent
BOE Technology Group and South China University of Technology | Date: 2015-10-09

The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.


Patent
BOE Technology Group and South China University of Technology | Date: 2015-12-10

In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.


Patent
BOE Technology Group and South China University of Technology | Date: 2015-12-10

A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.


Patent
BOE Technology Group and South China University of Technology | Date: 2015-10-09

This disclosure provides a thin film transistor and the preparation method thereof, an array substrate, and a display panel, so as to solve the problem that the active layer is prone to be corroded when a metal oxide thin film transistor is produced by a back channel etching process. The preparation method comprises: forming a gate electrode metal thin film on a base substrate, and allowing the gate electrode metal thin film to form a gate electrode metal layer comprising a gate electrode by a patterning process; forming a gate electrode insulating layer on the gate electrode metal layer; forming an active layer on the gate electrode insulating layer; preparing a metal nanoparticle layer on the active layer, said metal nanoparticle layer being used as an etching protection layer; forming a source and drain electrode metal thin film on the base substrate on which the above processes are finished, and allowing the source and drain electrode metal thin film to form a source and drain electrode metal layer comprising a source electrode and a drain electrode by a patterning process, wherein the source electrode and the drain electrode cover a part of the metal nanoparticle layer; removing or oxidizing the part of the metal nanoparticle layer which is not covered by the source electrode and the drain electrode in an oxygen-containing atmosphere; and forming a passivation layer on the source and drain electrode metal layer.

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