Hayashi H.,Sophia University7 1 Kioi choChiyoda kuTokyoJapan |
Fukushima D.,Sophia University7 1 Kioi choChiyoda kuTokyoJapan |
Tomimatsu D.,Sophia University7 1 Kioi choChiyoda kuTokyoJapan |
Noma T.,Sophia University7 1 Kioi choChiyoda kuTokyoJapan |
And 2 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2015
Employing a thin AlN film sputter-deposited on Si substrates, well-ordered GaN nanocolumn arrays were demonstrated by RF-plasma-assisted molecular-beam-epitaxy selective-area growth. Dislocation-free crystals were grown even on this cost-effective framework, which included high-density threading dislocations (>3×1011cm-2), by applying nanocolumn growth techniques. Single-peak PL spectra from integrated InGaN/GaN MQW were obtained in red region and the peak wavelength changed from 640 to 690nm with increasing nanocolumn diameter. This framework also contributes to a fabrication of vertical injection type flip-chip structure, even if a nanocolumn device. Damage-free wet-etching removal of Si substrates resulted in exposure of flip-chip well-ordered nanocolumns array. (a) TEM image of nanocolumns array on sputter-deposited thin AlN film/Si (111) substrate. (b) SEM image of flip-chip well-ordered nanocolumns array. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source