SoloPower is a solar energy company developing and manufacturing Copper indium gallium selenide Thin-film flexible Photo-voltaic Solar Panels. The company uses a special electroplating technology to utilize nearly 100% of its materials.SoloPower is based in San Jose, California, and has achieved the distinction of being the first company to obtain UL Certification of CIGS flexible solar panels in 2010. This was lauded as a significant achievement by California Governor Arnold Schwarzenegger. Later the same year, the company also received IEC Certification of its flexible CIGS solar panels, again an industry first. In March 2012, the company's modules set a world record aperture efficiency of 13.4% for flexible CIGS Solar Panels, as measured by NREL. Wikipedia.
SoloPower | Date: 2011-06-24
A plurality of solar cells is connected together in a shingled fashion. Each of the solar cells includes grid wires that are attached to an electrode of the solar cell so as to receive charge carriers produced when photons are absorbed by the solar cell. The grid wires are then interconnected with adjacent solar cells when the solar cells are shingled together. The grid wires may be applied to the solar cells via a laminate and the electrical interconnection of the grid wires may be achieved by the use of a conductive epoxy.
SoloPower | Date: 2012-01-10
An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.
SoloPower | Date: 2012-08-10
The present inventions provide method and apparatus that employ constituents from one or more constituent supply source or sources to form one or more films of a precursor layer formed on a surface of a continuous flexible workpiece. Of particular significance is the implementation of PVD systems that operate upon a horizontally disposed portion of a continuous flexible workpiece and a vertically disposed portion of a continuous flexible workpiece, preferably in conjunction with a short free-span zone of the portion of a continuous flexible workpiece.
SoloPower | Date: 2011-12-21
A solar cell module that has a back protective sheet and a front transparent protective sheet and edge sealant members that seal an inner portion of the solar cell module so as to define a cavity that receives a plurality of solar cells. A portion of the back protective sheet extends beyond the sealant members so as to define a mounting region that can receive mounting structures such as holes, connectors, rails or the like. By providing the mounting region, the mounting structures can be spaced from the sealant members which limits the damage to the sealant members during the mounting process and preserves the moisture sealed state of the solar cell cavity.
SoloPower | Date: 2012-04-10
The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including copper, indium, gallium, selenium and a dopant of a Group IA material; heating the precursor layer to a first temperature; reacting the precursor layer at the first temperature for a first predetermined time to transform the precursor layer to a partially formed absorber structure; cooling down the partially formed absorber structure to a second temperature, wherein both the first temperature and the second temperature are above 400 C.; and reacting the partially formed absorber structure at the second temperature for a second predetermined time, which is longer than the first predetermined time, to form a Group IBIIIAVIA absorber layer.