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Chaudhry A.,Panjab University | Sangwan S.,Panjab University | Roy J.N.,Solar Semiconductor
Journal of Computational Electronics | Year: 2011

A semi analytical model describing the bulk mobility for electrons in strained-Si layers as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The effects of uniaxial stress are understood on all the three components of mobility i.e. phonon, columbic and surface roughness mobility. The results show that the electron mobility is a strong rising function of applied uniaxial strain. Flatband voltage, Depletion Charge density, Inversion charge density, Energy gap and Effective surface electrical field have been analytically modeled. There is a sharp increase in the vertical electrical field and inversion charge density and decrease in the energy gap, depletion charge density and the flatband voltage when the uniaxial stress is applied. The electron mobility results have also been compared with the experimentally reported results and show good agreement. © Springer Science+Business Media LLC 2011. Source


Chaudhry A.,Panjab University | Roy J.N.,Solar Semiconductor
Journal of Semiconductor Technology and Science | Year: 2010

Modeling is essential to simulate the operation of integrated circuit (IC) before its fabrication. Seeing a large number of Metal-Oxide-Silicon Field-Effect-Transistor (MOSFET) models available, it has become important to understand them and compare them for their pros and cons. The task becomes equally difficult when the complexity of these models becomes very high. The paper reviews the mainstream models with their physical relevance and their comparisons. Major short-channel and quantum effects in the models are outlined. Emphasis is set upon the latest compact models like BSIM, MOS Models 9/11, EKV, SP etc. Source


Patent
Solar Semiconductor | Date: 2010-03-18

A method for producing a solar photovoltaic panel with an embedded RFID, and resultant product, are disclosed. A layup is formed of at least a first lamination layer and a plurality of electrically connected solar photovoltaic cells. At least a second lamination layer is added to the layup, and a lamination process is applied, forming a solar photovoltaic panel. An RFID tag is embedded in the panel before, during or after applying the lamination process. The RFID tag may be embedded between a front layer and a back layer, between sheets of ethylene vinyl acetate, between a backside of the layup and a junction box, or in an adhesive, sealant or polymerizing material. A solar photovoltaic panel with an embedded RFID tag is thereby formed. Instantiation information pertaining to the individual solar photovoltaic panel, including installation location information or test information, and product information are stored in the RFID tag.


Patent
Solar Semiconductor | Date: 2010-02-11

Methods and apparatuses for equalizing voltages across a plurality of photovoltaic units connected in series are provided. The apparatus may include a plurality of energy storage devices. In a first configuration, each of the energy storage devices is configured to be connected in parallel with one of a first set of the photovoltaic units. In a second configuration, each of the energy storage devices is configured to be connected in parallel with one of a second set of the photovoltaic units. The apparatus may also include a plurality of switches configured to switch between the first configuration and the second configuration, to equalize the voltages across the photovoltaic units.


Patent
Solar Semiconductor | Date: 2010-05-12

Methods and apparatuses for equalizing voltages across a plurality of photovoltaic units connected in series are provided. The apparatus may include a plurality of energy storage devices. In a first configuration, each of the energy storage devices is configured to be connected in parallel with one of a first set of the photovoltaic units, and a voltage across a first one of the energy storage devices has a first polarity. In a second configuration, each of the energy storage devices is configured to be connected in parallel with one of a second set of the photovoltaic units, and the voltage across the first one of the energy storage devices has a second polarity that is different from the first polarity. The apparatus may also include a plurality of switches configured to switch between the first configuration and the second configuration, to equalize the voltages across the photovoltaic units.

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