Kharangarh P.,Apollo Solar Energy Center |
Misra D.,University Heights |
Georgiou G.E.,Apollo Solar Energy Center |
Delahoy A.E.,Apollo Solar Energy Center |
And 5 more authors.
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2012
Two sets of samples (CdTe solar cells) were investigated at 1V within a temperature range of 300K-393K. We discuss Shockley-Read-Hall recombination /generation (SRH R-G) as applied to CdTe and the assumptions used to yield trap energy levels in CdTe. Observed activation energies of the J-V characterization made with Cu-containing back contact in one sample shows one slope while in another sample shows two distinct slopes in Arrhenius plot of ln (J 0T2) vs. 1/T. Using published identification of the physical trap with energy level, we conclude that one sample does not have hole traps while the other cell shows deep levels corresponding to substitutional impurities of Cu and positive interstitial Cui 2+. © 2012 IEEE.