Woburn, MA, United States
Woburn, MA, United States

Skyworks Solutions, Inc. is a semiconductor company headquartered in Woburn, Massachusetts.The company manufactures semiconductors for use in radio frequency and mobile communications systems. Its products include power amplifiers, front end modules and RF products for handsets and wireless infrastructure equipment. The Company's portfolio includes amplifiers, attenuators, circulators, demodulators, detectors, diodes, directional couplers, front-end modules, hybrids, infrastructure RF subsystems, isolators, lighting and display solutions, mixers, modulators, optocouplers, optoisolators, phase shifters, PLLsVCOs, power dividers/combiners, power management devices, receivers, switches and technical ceramics.During 2009 and 2010, Skyworks benefitted from industry moves towards higher-end mobile phones with multi-band communication, exiting fiscal year 2010 with revenue of $1,072 million. Although operating in a market dominated by big name companies, it doubled its share price in one year, and in March 2010 was tipped by the Forbes-owned Investopedia website as one of three "not-so-famous" stocks likely to give good capital returns in 2010.The company formed as a result of a merger of Alpha Industries and the wireless communications division of Conexant, which took effect on 26 June 2002. Headquartered in Woburn, Massachusetts, Skyworks has manufacturing facilities in Woburn, Newbury Park, California and Mexicali, Mexico and design centers in Irvine, California, Santa Rosa, California, Newbury Park, Woburn, Greensboro, North Carolina and Cedar Rapids, Iowa. The music video for The Postal Service's song "Such Great Heights" is set in the Newbury Park chip fabrication plant. According to its website, the company has design, engineering, manufacturing, marketing, sales and service facilities throughout North America, Europe, Japan and Asia.A Skyworks 2614B 315BB seem to be used in some hardware revisions of the PlayStation 4. Wikipedia.

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Embodiments disclosed herein include methods of modifying synthetic garnets used in RF applications to reduce or eliminate Yttrium or other rare earth metals in the garnets without adversely affecting the magnetic properties of the material. Some embodiments include substituting Bismuth for some of the Yttrium on the dodecahedral sites and introducing one or more high valency ions to the octahedral and tetrahedral sites. Calcium may also be added to the dodecahedral sites for valency compensation induced by the high valency ions, which could effectively displace all or most of the Yttrium (Y) in microwave device garnets. The modified synthetic garnets with substituted Yttrium (Y) can be used in various microwave magnetic devices such as circulators, isolators and resonators.

Disclosed are structures and methods related to a barrier layer for metallization of a selected semiconductor such as indium gallium phosphide (InGaP). In some embodiments, the barrier layer can include tantalum nitride (TaN). Such a barrier layer can provide desirable features such as barrier functionality, improved adhesion of a metal layer, reduced diffusion, reduced reactivity between the metal and InGaP, and stability during the fabrication process. In some embodiments, structures formed in such a manner can be configured as an emitter of a gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) or an on-die high-value capacitance element.

Apparatus and methods for adjusting a gain of an electronic oscillator, such as a voltage-controlled oscillator (VCO), are disclosed. In one aspect, an apparatus for compensating for VCO gain variations includes a charge pump controller. The charge pump controller can be configured to select a VCO gain model based on a comparison of a VCO gain indicator and a threshold value stored in a memory, obtain VCO gain model parameters from the memory corresponding to the selected VCO gain model, and compute a charge pump current control value using the VCO gain model parameters. The charge pump current control value can be used to compensate for VCO gain variations.

Apparatus and methods for distributing spurious tones through the frequency domain are disclosed. One such apparatus can include a dithering circuit configured to generate a sequence of numbers that exhibit statistical randomness and a variable frequency circuit configured to adjust a frequency of an output based on the sequence of numbers so as to spread energy of spurious tones in a frequency response of the output to lower a noise floor. In one example, spurious tones can be reduced in a negative voltage generator of a radio frequency (RF) attenuator.

Disclosed are circuits and method for reducing or eliminating reference spurs in frequency synthesizers. In some implementations, a phase-locked loop (PLL) such as a Frac-N PLL of a frequency synthesizer can include a phase frequency detector (PFD) configured to receive a reference signal and a feedback signal. The PFD can be configured to generate a first signal representative of a phase difference between the reference signal and the feedback signal. The PLL can further include a compensation circuit configured to generate a compensation signal based on the first signal. The PLL can further includes a voltage-controlled oscillator (VCO) configured to generate an output signal based on the compensation signal. The compensation signal can include at least one feature for substantially eliminating one or more reference spurs associated with the PLL.

An electronic device comprises an active radio frequency (RF) circuit element, and a passive RF circuit element integrated into the same silicon-on-insulation (SOI) substrate, and a dielectric carrier substrate bonded to the SOI substrate.

One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and an RF transmission line electrically coupled to an output of the power amplifier. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. The RF transmission line includes a nickel layer with a thickness that is less than 0.5 um, a conductive layer under the nickel layer, a palladium layer over the nickel layer, and a gold layer over the palladium layer. Other embodiments of the module are provided along with related methods and components thereof.

One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to provide a radio frequency signal at an output, an output matching network coupled to the output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the radio frequency signal, and a harmonic termination circuit coupled to the output of the power amplifier. The power amplifier is included on a power amplifier die. The output matching network can include a first circuit element electrically connected to an output of the power amplifier by way of a pad on a top surface of a conductive trace, in which the top surface has an unplated portion between the pad the power amplifier die. The harmonic termination circuit can include a second circuit element. The first and second circuit elements can have separate electrical connections to the power amplifier die. Other embodiments of the module are provided along with related methods and components thereof.

Skyworks Solutions | Date: 2016-02-10

Embodiments disclosed herein relate to using cobalt (Co) to fine tune the magnetic properties, such as permeability and magnetic loss, of nickel-zinc ferrites to improve the material performance in electronic applications. The method comprises replacing nickel (Ni) with sufficient Co^(+2) such that the relaxation peak associated with the Co^(+2) substitution and the relaxation peak associated with the nickel to zinc (Ni/Zn) ratio are into near coincidence. When the relaxation peaks overlap, the material permeability can be substantially maximized and magnetic loss substantially minimized. The resulting materials are useful and provide superior performance particularly for devices operating at the 13.56 MHz ISM band.

Disclosed are embodiments of isolator/circulator junctions that can be used for radiofrequency (RF) applications, and methods of manufacturing the junctions. The junctions can have excellent impedance matching, even as they are being miniaturized, providing significant advantages over previously used junctions. The junctions can be formed of both high and low dielectric constant material.

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