Entity

Time filter

Source Type

Albuquerque, NM, United States

Trademark
SK Infrared LLC | Date: 2013-11-06

Electric or electronic sensors for medical diagnostics, namely, for detecting the presence or absence of cancers, immune disorders, systemic disorders, viral and bacterial infections, inflammatory disorders, vascular and circulatory disorders, metabolic disorders, endocrine and exocrine disorders, nervous system disorders, and allergies.


Trademark
SK Infrared LLC | Date: 2013-10-31

Electric or electronic sensors for detecting the presence or absence of cancers, immune disorders, systemic disorders, viral and bacterial infections, inflammatory disorders, vascular and circulatory disorders, metabolic disorders, endocrine and exocrine disorders, nervous system disorders, and allergies.


Grant
Agency: Department of Defense | Branch: Defense Advanced Research Projects Agency | Program: SBIR | Phase: Phase I | Award Amount: 149.79K | Year: 2015

With this project, Skinfrared LLC in conjunction with Duke University, aims to develop a reconfigurable hyperspectral imaging system. Hyperspectral imaging systems (HSI) are important for determining the chemical composition of heterogeneous substances of a given scene. They have many applications in both military and civilian ranging from gas and terrain identification to food inspection. Current systems tend to be slow, large, expensive and difficult to configure for different applications. Our proposal is to utilize the tunable properties of metamaterials in conjunction with a sparse detector array and a compressive sensing algorithm to overcome these limitations. Phase I of the proposed effort will consist of making a detailed design of the proposed system. This will consist of an assessment of current HSI systems, an design the complete system, an evaluation of tradeoffs of the system components and performances, developing a risk reduction plan, and creating physical mockup of the proposed system. The subcontractor, Duke University, will design and model the tunable spatial light modulator. For the Phase I option, test elements of the SLM will be fabricated and tested.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 99.89K | Year: 2011

In the proposed effort, SK Infrared LLC (SKI), a spin-off from the Krishna INfrared Detector (KIND) laboratory at the University of New Mexico (www.chtm.unm.edu/kind), in collaboration with Raytheon Vision Systems (RVS) and Intelligent Epitaxy Inc (Intelliepi) is proposing a systematic study with the following two objectives. (a) Optimization of the epitaxial growth parameters to reduce dark current noise, decrease growth defects, improve uniformity and increase device reliability and reproducibility (in collaboration with Intelliepi) (b) Explore novel detector architecture that leverages the bandgap engineering flexibility of the superlattice absorber combined with the barrier engineering capability of the 6.1 semiconductor family and integrate them into FPAs (in collaboration with RVS) As a part of this effort, the advances made in the improving the epitaxial growth procedure will be transitioned to Intelliepi and advances in the heterostructure design and FPA fabrication will be transitioned to RVS. The KIND lab has recently purchased a $1.35M Veeco Gen-10 MBE reactor with Sb and As valved cracker source capable of highly uniform growth on 3-inch wafers. SKI will have access to this reactor through the user facility at the Center for High Technology Materials (CHTM). In particular, we will explore a double-unipolar barrier design called PbIbN. The double-barrier heterostructure design (PbIbN) belongs to the family of band gap engineered SLS architectures, such as nBn , M-structure , W-structure , and complementary barrier infrared detector (CBIRD) . The improved performance of these SLS devices over the homojunction SLS detectors is credited to reduction in dark current by use of current blocking layers either in conduction or valence bands which reduce one or several dark current components. The PbIbN design further reduces noise in SLS-based detectors, since it contains wider bandgap potential barriers in both valence and conduction bands. In PbIbN detector design, the electron blocking (EB) layer sandwiched between P contact layer and absorber region blocks the minority carrier diffusion (electrons) current from P contact layer into the absorber region. Similarly the hole blocking (HB) layer blocks minority carrier diffusion (holes) current from N contact layer into the absorber region. Moreover, the electric field drop across the active region is small as compared to a conventional PIN design since there is significant amount of field drop across the EB and HB layers, which have a wider band gap compared to the absorber region. This reduction in electric field leads to very small depletion region and hence reduction in the Schockley-Read-Hall (SRH) generation-recombination component of dark current. The tunneling currents are also reduced due to significant reduction in field drop. Thus the device can be made diffusion limited over wide range of operating temperatures, thereby improving the performance of the device.


Grant
Agency: Department of Defense | Branch: Missile Defense Agency | Program: SBIR | Phase: Phase I | Award Amount: 99.89K | Year: 2011

In the proposed effort, SK Infrared LLC, a spin-off from the Krishna INfrared Detector (KIND) laboratory at the University of New Mexico (www.chtm.unm.edu/kind), in collaboration with Raytheon Vision Systems (RVS) is proposing to develop a dual band based imager using a novel unipolar heterostructure design with Type II InAs/GaSb strained layer superlattice detectors. The dual bands that are chosen for this application are midwave infrared (MWIR, 3-5 & #61549;m) and the long wave infrared (LWIR, 8-14 & #61549;m). However, these devices can be designed for different wavelength bands to suit the application needs of the customer. The dual band detectors will be developed using a novel double unipolar barrier design called"PbIbN". The advantage of the 6.1 family of semiconductors (InAs, GaSb and AlSb) is that it provides the device designer tremendous flexibility to control the valence band and conduction band offsets between the absorber and the barrier layers. The PbIbN device that will be investigated as a part of this proposal utilizes an electron barrier at the PI interface and a hole barrier at the IN interface. The unipolar barriers prevent the diffusion of minority carriers from either side of the absorber. Moreover, since the field drop is lower across the absorber region, the generation-recombination (GR) and tunneling currents are also reduced. The goal of the Phase I effort will be to demonstrate a single pixel PbIbN detector with dual band (MWIR/LWIR) operation with temporally simultaneous and spatially collocated detection. The Phase I option effort will transition this to an 8x8 array bonded to a fanout to determine the uniformity and reproducibility of the back-side illuminated devices. The Phase II effort will involve the demonstration of a 512x512 focal plane array in collaboration with RVS and their insertion into the Ballistic Missile Defense System (BMDS).

Discover hidden collaborations