Entity

Time filter

Source Type

Pohang, South Korea

Patent
SiliconFile Technologies Inc. | Date: 2014-09-02

Disclosed is a phase difference detection pixel using a microlens, which detects a phase difference without the loss of an input signal by modifying the shape of a microlens, which collects light incident into a photodiode, such that the light passes through only in a specific direction. In the phase difference detection pixel using a microlens, a signal reduction problem, which is a disadvantage of the existing phase difference detection pixel, is solved and a phase difference detection function is achieved in all areas of an image sensor. The phase difference detection pixel using a microlens is variously applied for distance measurement between objects or three-dimensional image capturing.


The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.


Patent
Siliconfile Technologies Inc. | Date: 2014-08-26

An image sensor cell is divided into two chips, and a capacitor for noise reduction is formed in a bottom wafer in correspondence with a unit pixel of a top wafer in a stack chip package image sensor having a coupling structure of the two chips, so that noise characteristics of the image sensor are improved. A stack chip package image sensor includes: a first semiconductor chip that includes a photodiode, a transmission transistor, and a first conductive pad and outputs image charge, which is output from the photodiode, through the first conductive pad; and a second semiconductor chip that includes a drive transistor, a selection transistor, a reset transistor, and a second conductive pad and supplies a corresponding pixel with an output voltage corresponding to the image charge received from the first semiconductor chip through the second conductive pad. The second semiconductor chip includes a capacitor for noise reduction.


Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.


Patent
Siliconfile Technologies Inc. | Date: 2014-08-22

Disclosed is an image sensor with a 3D stack structure, in which pixels of a top plate are realized as image pixels and pixels of a bottom plate are realized as pixels for realizing a phase difference AF, so that the phase difference AF is realized without loss of resolution. In the image sensor with a 3D stack structure, a problem of the reduction of resolution, which is a disadvantage of an existing imaging surface phase difference AF device, is solved, so that a fast phase difference AF is realized while maintaining high resolution without a separate phase difference AF module.

Discover hidden collaborations