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Sunnyvale, CA, United States

Microchip Technology is an American manufacturer of microcontroller, memory and analog semiconductors. Its products include microcontrollers , Serial EEPROM devices, Serial SRAM devices, KEELOQ devices, radio frequency devices, thermal, power and battery management analog devices, as well as linear, interface and mixed signal devices.Some of the interface devices include USB, ZigBee/MiWi, Controller Area Network, and Ethernet.Corporate headquarters is located at Chandler, Arizona with wafer fabs in Tempe, Arizona and Gresham, Oregon, and assembly/test facilities in Chachoengsao, Thailand. Sales for the fiscal year ending on March 31, 2014 were $1,931,217,000.Among its chief competitors are Analog Devices, Atmel, Freescale , Infineon, Maxim Integrated Products, NXP Semiconductors , Renesas Electronics, STMicroelectronics, and Texas Instruments. Wikipedia.


Patent
Silicon Storage Technology | Date: 2015-03-23

A memory device, and method of make same, having a substrate of semiconductor material of a first conductivity type, first and second spaced-apart regions in the substrate of a second conductivity type, with a channel region in the substrate therebetween, a conductive floating gate over and insulated from the substrate, wherein the floating gate is disposed at least partially over the first region and a first portion of the channel region, a conductive second gate laterally adjacent to and insulated from the floating gate, wherein the second gate is disposed at least partially over and insulated from a second portion of the channel region, and a stressor region of embedded silicon carbide formed in the substrate underneath the second gate.


Patent
Silicon Storage Technology | Date: 2014-10-03

A non-volatile memory device that a semiconductor substrate of a first conductivity type. An array of non-volatile memory cells is in the semiconductor substrate arranged in a plurality of rows and columns. Each memory cell comprises a first region on a surface of the semiconductor substrate of a second conductivity type, and a second region on the surface of the semiconductor substrate of the second conductivity type. A channel region is between the first region and the second region. A word line overlies a first portion of the channel region and is insulated therefrom, and adjacent to the first region and having little or no overlap with the first region. A floating gate overlies a second portion of the channel region, is adjacent to the first portion, and is insulated therefrom and is adjacent to the second region. A coupling gate overlies the floating gate. A bit line is connected to the first region. A negative charge pump circuit generates a first negative voltage. A control circuit receives a command signal and generates a plurality of control signals, in response thereto and applies the first negative voltage to the word line of the unselected memory cells. During the operations of program, read or erase, a negative voltage can be applied to the word lines of the unselected memory cells.


A non-volatile memory cell includes a semiconductor substrate of first conductivity type, first and second spaced-apart regions in the substrate of second conductivity type, with a channel region in the substrate therebetween. A floating gate has a first portion disposed vertically over a first portion of the channel region, and a second portion disposed vertically over the first region. The floating gate includes a sloping upper surface that terminates with one or more sharp edges. An erase gate is disposed vertically over the floating gate with the one or more sharp edges facing the erase gate. A control gate has a first portion disposed laterally adjacent to the floating gate, and vertically over the first region. A select gate has a first portion disposed vertically over a second portion of the channel region, and laterally adjacent to the floating gate.


Patent
Silicon Storage Technology | Date: 2015-07-02

An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.


Patent
Silicon Storage Technology | Date: 2014-08-08

The present invention relates to a flash memory device with EEPROM functionality. The flash memory device is byte-erasable and bit-programmable.

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