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Frankfurt am Main, Germany

Girma M.G.,Robert Bosch GmbH | Beer S.,Silicon Radar GmbH | Hasch J.,Robert Bosch GmbH | Gonser M.,Robert Bosch GmbH | And 4 more authors.
European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuRAD 2013: 10th European Radar Conference | Year: 2013

In this paper, a compact (8×8 mm2 package size) short-range, bistatic radar sensor operating at 122 GHz is presented. The goal is to show the feasibility of a SiP solution in a low-cost Surface-Mounted- Device (SMD) package. The millimeter-wave integrated circuit is based on a SiGe-BiCMOS technology which offers an fT of 280GHz and f max of 300 GHz. The setup of the radar sensor is introduced and measurement results for frequency-modulated-continuous-wave (FMCW) modulation demonstrate the performance of the radar front end. The targeted application areas are short range distance and speed measurements, which especially gain an advantage for high resolution distance measurements because of the short wavelength at mm-wave frequency. The chip occupies an area of 940μm × 1450μm, and dissipates a DC power of 450mW. © 2013 EMA.

Yuan J.,SanDisk Corporation | Moen K.A.,Georgia Institute of Technology | Cressler J.D.,Georgia Institute of Technology | Rucker H.,Ihp Microelectronics | And 2 more authors.
IEEE Transactions on Electron Devices | Year: 2010

We present a measured current-mode logic ring oscillator gate delay of 2.3 ps, a record for digital circuits in silicon-based technologies. This result was achieved in a silicongermanium (SiGe) heterojunction bipolar transistor (HBT) technology operating at 25 K. In addition to higher cutoff frequency and lower collector-base capacitance, lower base resistance is also responsible for the improved switching speed at cryogenic temperatures. The self-heating characteristics of these SiGe HBT circuits are also investigated across temperatures. © 2010 IEEE.

Sarmah N.,Ihp Microelectronics | Schmalz K.,Ihp Microelectronics | Winkler W.,Silicon Radar GmbH | Scheytt C.J.,Ihp Microelectronics | Glisic S.,Ihp Microelectronics
2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2011 - Digest of Papers | Year: 2011

In this work, a 122 GHz transmitter circuit using frequency doublers is realized in 0.13 "m SiGe:C BiCMOS technology with f T/f max of 250/315 GHz. Two versions of the frequency doubler based on the balanced topology with cascode transistor are implemented. In the basic version, the peak conversion gain was -9 dB with -6 dBm output power. In the improved version the peak conversion gain is improved to -6 dB with -3 dBm peak output power by using open stubs as second harmonic reflectors. A transmitter is realized by combining a VCO working from 59-62 GHz with the basic version of the doubler. The transmitter output power is from -3.5 to -5.5 dBm in the output frequency range of 118-122 GHz. © 2011 IEEE.

Russer J.A.,TU Munich | Uddin N.,Silicon Radar GmbH | Awny A.S.,Ihp Microelectronics | Thiede A.,University of Paderborn | Russer P.,TU Munich
IEEE Electromagnetic Compatibility Magazine | Year: 2015

Stochastic electromagnetic fields with Gaussian amplitude probability distribution can be fully described by auto-and cross correlation spectra of the field components. The cross correlation spectra have to be known for the pairs of field components taken at different spatial points. Integrated electric dipole and magnetic loop probes together with active electronics in AlGaAs/GaAs-HEMT and SiGe:C-HBT technologies are presented. While the probes allow for a spatial resolution in the 100 μm range, integrated amplifiers provide about 30 dB gain over a bandwidth of about 10 GHz. © 2015 IEEE.

Debski W.,Silicon Radar GmbH | Winkler W.,Silicon Radar GmbH | Borngraber J.,Ihp Microelectronics
European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference | Year: 2014

240 GHz transmitter and receiver ICs for a 3D imaging system operating are presented. The transmitter exhibits 0.75 dBm output power at 220 GHz, and features a bandwidth of more than 60 GHz while consuming 55 mA from 3 V supply. The receiver features 14 dB of conversion gain at 220 GHz while consuming 81 mA from a 3 V supply. The circuits were implemented in 0.13μm SiGe:C BiCMOS technology with fT/fmax of 300GHz/500GHz. © 2014 European Microwave Association-EUMA.

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