Frankfurt am Main, Germany
Frankfurt am Main, Germany

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Agency: Cordis | Branch: FP7 | Program: CP | Phase: ICT-2011.1.1 | Award Amount: 4.89M | Year: 2012

Network operators are looking for cost effective solutions to manage and upgrade their networks to meet the user experience demanded by European citizens. The backhauling infrastructure is becoming a bottleneck.\nE3Network will design an E-band transceiver for the backhaul infrastructure of the future networks. It will work in the E-band, which enables highly focused pencil beam transmissions and huge bandwidth. The pencil-beam property facilitates a high degree of frequency reuse in the deployment of backhaul links and reduces EMF exposure of European citizens. The transceiver will use modern digital multi-level modulations to achieve high spectral efficiency. This together with the huge bandwidth will enable high capacities above 10 Gbps.\nThe RF analogue front-end of the transceiver will be a highly integrated circuit using advanced SiGe BiCMOS technology, which enables energy and cost effectiveness. However, a consequence of transistors length reduction is an exponential increase of process variations, leading to over-constrained designs to guarantee sufficient post-fabrication performance yield. In order to achieve the required performance, a mixed analogue-digital design approach together with novel signal processing methods will be applied.\nResearch will be driven by the end-user and industrial partners to ensure that it address the needs of the future generations of the mobile network infrastructure. The potential for an increased economic and energy efficiency of access/transport infrastructures will be illustrated by a prototype integrated in the network providing communication over 1 km with availability of 99.995%. The developed backhaul technology will strengthen the position of European Industry in the field of network infrastructure technology. It will facilitate the transition to smaller and more energy efficient base stations, which are key for the novel network topologies needed to address the new patterns of usage of citizens.

Agency: Cordis | Branch: FP7 | Program: CP | Phase: ICT-2011.3.2 | Award Amount: 9.71M | Year: 2011

RF communication and remote sensing (radar/radiometric) systems are facing the demands ofincreasing complexity/number of frequency bands, increased bandwidths and higher frequencies forhigher data throughput, while at the same time the power consumption, the form factor of the systems,and the overall system costs need to be reduced. Smart micro-/mm-wave systems will have to achieveself-reconfigurable operations for real-time efficient self-optimization of their performance. For suchadaptive systems, high-performance tuning components and strategies for buildingmonolithically integrated miniaturised reconfigurable RF circuits/front-ends are highly needed.The NANOTEC project aims to generate innovative approaches towards novel RF/mm-wave systemswith increased functionality and potentially lower cost addressing future needs of European industry.NANOTEC will develop 3 Demonstrators (1: 10-24 GHz reflect arrays for aerospace, 2: 94 GHz highsensitivity front-ends for passive imaging and 3: 140 GHz radar front-ends for active imaging) with advanced functionalities based on enabling technologies and via monolithic integration of highperformance RF-MEMS switches in GaN/SiGe IC foundry processes. NANOTEC will aim toimprove reliability of RF-MEMS by using NANO structured materials and to demonstrate addedvalueby employing the proposed GaN/SiGe MEMS-ICs for 10-140 GHz applications. Theemergence of European sources (SiGe/GaN MEMS-IC foundries) will play a key role towardsincreasing the availability of RF-MEMS TEChnology and related products (thus shortening the timeto-market). If successful, NANOTEC will also lead to improved safety/security thus creating novel business opportunities/jobs for existing/new companies in Europe. The NANOTEC consortiumconsists of 17 partners (7 countries) including European stakeholders in the field of communications,avionics, space and security.

Agency: Cordis | Branch: FP7 | Program: CP-FP | Phase: SPA.2013.3.1-01 | Award Amount: 2.62M | Year: 2013

DIFFERENT aims at building the foundation of a new generation of space-borne Synthetic Aperture Radars (SAR) with a significant reduction in cost, size, mass and power consumption, and enhanced performances with respect to systems currently available. The final product will be a compact, dual-band, dual-polarization radar with DBF capabilities. DIFFERENT will achieve these results setting up a consortium between SMEs and research institutions to develop and to exchange technologies and know how to improve competitiveness of SMEs. 1) DIFFERENT proposes advances towards space-borne radars building a low-cost, compact SAR by combining a) a new concept of multi-static dual-band (C/X) dual-polarization passive SAR having digital beamforming (DBF); b) the development of DBF BICMOS chip and of SiGe MMIC to enhance radar operations and to allow an unprecedented level of integration; c) the development of a dual-band (C/X) dual-polarized low-cost array antenna which will have a shared apertur; d) integration technologies that will make use of materials new to the space sector and that will ensure the high level of integration to reduce costs and weight of the overall payload. 2) DIFFERENT targets the stable integration of SMEs into the Earth Observation (EO) value chain by developing know how in the following key areas which are recognized as strategic for the future scientific and commercial missions a. SiGe BiCMOS integrated circuits b. Advanced integration techniques c. Digital Beam Forming 3) DIFFERENT will open to SMEs new possibilities in the entire space sector developing a distributed SAR space system fulfilling governmental and commercial needs. 4) The DIFFERENT consortium is tailored to sustain the involved SMEs towards the acquisition of a leading role in the EO value chain. SMEs central position in DIFFERENT is supported by a national space agency (DLR), by a research institute and technology provider (IHP) and by two academic partners (UNICAL / KENT)

Agency: Cordis | Branch: FP7 | Program: CP | Phase: ICT-2009.3.2 | Award Amount: 4.72M | Year: 2009

SUCCESS targets to develop a technology platform and best-practice design methods to enable the breakthrough of silicon mm-Wave SoCs for high-volume applications. Silicon technology (CMOS, SiGe) has made tremendous progress towards ever higher device cut-off frequencies. Nowadays all RF components for mm-Wave sensing applications up to 120 GHz can be realized in silicon. Silicon technology hence allows integration of mm-Wave circuitry and digital logic for the realization of a true mm-Wave System-on-Chip (SoC). The mm-wavelengths allow mm-size antennas which potentially enable miniaturized wireless sensors systems with the size and form factor of an IC package. However several challenges make it difficult to arrive at real low cost. Firstly no true low-cost mm-wave packaging technologies with antenna-integration are available. Furthermore challenges in mm-wave SoC design arise in form of imprecise modelling and device variations. In addition production testing at such high-frequency is extremely expensive, time consuming, and error prone. SUCCESS is an initiative of 9 major industrial and excellent academic organisations. It represents a vertically integrated consortium bringing together semiconductor foundries, design houses, high-frequency packaging experts and industrial end users. The consortium encompasses universities, research institutions, SMEs and large industrial entities.\nThree topics will be addressed in the project:\n1. Development of a low-cost System-In-Package (SiP) technology and design platform with integrated antennas\n2. mm-Wave System-on-Chip (SoC) design methodology\n3. mm-Wave Built-In Self Test (BIST) and novel SiP test methodology\nThe results will be demonstrated in a 122 GHz miniaturized sensor system, realized as surface mount component using plastic package technology.

Winkler W.,Silicon Radar GmbH | Debski W.,Silicon Radar GmbH | Schmalz K.,Ihp Microelectronics | Borngraber J.,Ihp Microelectronics | Scheytt Ch.,Ihp Microelectronics
European Microwave Week 2010, EuMW2010: Connecting the World, Conference Proceedings - European Microwave Conference, EuMC 2010 | Year: 2010

The paper presents 122 GHz receiver circuits including a low-noise-amplifier (LNA) and a mixer fabricated in SiGe BiCMOS technology. The design takes advantage of a novel transmission line structure with thick metal ground-shield on top of the MMIC. The LNA utilizes a two-stage cascode topology and the mixer is a Gilbert cell with additional current injection in the RF-path. Measurements of the receiver frontend show a gain of 12 dB and a noise figure below 13 dB at 121-29 GHz. The power consumption is 165 mW from a 3.5 Volt supply. The receiver frontend is intended for the use in ISM-band radar and communication systems, wide-band communication systems and in radar imaging systems. © 2010 EuMA.

Schmalz K.,Ihp Microelectronics | Winkler W.,Silicon Radar GmbH | Borngdiber J.,Ihp Microelectronics | Debski W.,Silicon Radar GmbH | And 2 more authors.
IEEE MTT-S International Microwave Symposium Digest | Year: 2010

A subharmonic transceiver for sensing and imaging applications in the 122 GHz ISM band has been proposed. The receiver consists of a single-ended LNA, a pushpush VCO with 1/32 divider, a polyphase filter, and a subharmonic mixer. The receiver is fabricated in SiGe:CBiCMOS technology with fT/fmax of 255GHz/315GHz. Its differential down-conversion gain is 31 dB at 122 GHz, and the corresponding noise figure is 11 dB. The 3-dB bandwidth reaches from 121 GHz to 124 GHz. The input 1-dB compression point is at -44 dBm. The receiver consumes 113 mA at a supply voltage of 3 .2 V. © 2010 IEEE.

Debski W.,Silicon Radar GmbH | Winkler W.,Silicon Radar GmbH | Borngraber J.,Ihp Microelectronics
European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference | Year: 2014

240 GHz transmitter and receiver ICs for a 3D imaging system operating are presented. The transmitter exhibits 0.75 dBm output power at 220 GHz, and features a bandwidth of more than 60 GHz while consuming 55 mA from 3 V supply. The receiver features 14 dB of conversion gain at 220 GHz while consuming 81 mA from a 3 V supply. The circuits were implemented in 0.13μm SiGe:C BiCMOS technology with fT/fmax of 300GHz/500GHz. © 2014 European Microwave Association-EUMA.

Debski W.,Silicon Radar GmbH | Winkler W.,Silicon Radar GmbH | Sun Y.,Ihp Microelectronics | Marinkovic M.,Ihp Microelectronics | And 2 more authors.
European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 | Year: 2012

The design of a complex integrated transceiver for 121-124 GHz is presented. The transceiver consists of the transmitter with VCO, power amplifier and power detectors, the receiver with LNA, two mixers for quadrature receive path and variable gain amplifiers for IF-output and the digital control circuits with SPI-interface. A central part is the VCO with DAC and memory for on-chip storage of programmable frequency ramps for FMCW radar applications. The oscillator phase noise is -92 dBc/Hz at 1MHz offset. For calibration of the radar-system on chip, a frequency measurement unit is integrated. The radar chip has power consumption of 380 mW and occupies an area of 1.8 mm × 1.5 mm. Several examples of frequency ramp generation are presented. The chip is intended for integration together with antenna in a single package. © 2012 European Microwave Assoc.

Schmalz K.,Ihp Microelectronics | Winkler W.,Silicon Radar GmbH | Borngraber J.,Ihp Microelectronics | Debski W.,Silicon Radar GmbH | And 2 more authors.
IEEE Journal of Solid-State Circuits | Year: 2010

The iterative design of an integrated subharmonic receiver for 120127 GHz is presented. The receiver consists of a single-ended low-noise amplifier (LNA), a push-push voltage-controlled oscillator (VCO) with 1/32 divider, a polyphase filter, and a subharmonic mixer. The receiver is fabricated in SiGe:C BiCMOS technology with fT/fmax of 255 GHz/315 GHz. In the first design the differential down-conversion gain of the receiver is 25 dB at 127 GHz, and the corresponding noise figure (NF) is 11 dB. The 3 dB bandwidth reaches from 125 GHz to 129 GHz. The input 1 dB compression point is at -40 dBm. The receiver draws 139 mA from a supply voltage of 3.3 V. A subsequent design demonstrates 31 dB differential gain at 122 GHz, and 11 dB NF. The 3 dB bandwidth is from 121 GHz to 124 GHz. The receiver has a NF of 8 dB for 3 GHz IF frequency due to integrated RF bandpass-filtering. It is realized by the lower NF of the LNA, and the LNA itself. © 2010 IEEE.

Agency: Cordis | Branch: H2020 | Program: SME-2 | Phase: IT-1-2015 | Award Amount: 2.41M | Year: 2016

Everyday Life Radar Sensors For Transportation In the project ELIRAD we plan to further develop a cutting-edge radar sensor from the feasibility demonstration level to industrial readiness and maturity for market introduction. The developed sensors will support disruptive transportation applications and emerging markets. High-precision distance and velocity sensing is essential for a great variety of upcoming autonomous transportation systems like civil micro-drones, robotics, fully-automatic transport systems as well as autonomously driving cars. Silicon Radar (SiR) - with eight years experience in development and series production of radar chips - has developed a new generation of leading edge 120GHz radar sensors ideally suited for these systems. Our first-mover product will offer exceptional advantages and overcome drawbacks of current technologies. The sensor is a miniaturized but robust component for high-precision distance measurement; will consume significant less power, is dirt-immune and reliable; respects privacy. The radar sensor enables 360 true low-cost sense-&-avoid systems and thus will pave the way to wider acceptance of users and regulatory authorities. SiRs ultra-compact 120 GHz radar sensor is a result of the FP7-ICT project SUCCESS. Various prototypes where built; samples and evaluation boards where shipped to hundreds of customers. The reactions were constantly overwhelming. Positive feedbacks came from several companies with wide spectrum of applications ranging from industrial precision measurement up to obstacle detection in transport. The objective of ELIRAD is (i) to finalize the technical concept of serial production of the 120GHz radar sensor (high volume packaging and test concept) and (ii) to run a full chip qualification process, addressing reliable operation under a wide range of environmental conditions. We will conduct extensive tests of the circuits and modules verifying their readiness for transportation applications.

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