Marysville, WA, United States
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Shi Y.-Y.,Xi'an University of Science and Technology | Shi Y.-Y.,Silicon Energy | Wang X.-G.,Xi'an University of Science and Technology | Wang X.-G.,Silicon Energy | And 3 more authors.
Key Engineering Materials | Year: 2017

The fabrication and thermal physical properties contain thermal conductivity (TC) and coefficient of thermal expansion(CTE) using 40%, 50%, 60% vol% β-SiC particle reinforced Al composite for electronic packaging respectively have been analyzed. The composites were produced by ball milling and pressing method. The composite which fabricated by tri-sized β-SiC particle with a weight ratio of 17:7:1,vol% of 50% and 60%.The dense and morphology were investigated. The relationship between volume fraction of β-SiC particle and thermal physical properties was discussed. Changed the volume fraction of β-SiC particle will led to a decreasing or increasing of TC and CTE. It found that values of TC and CTE were achieved their maximum balance when using tri-sized β-SiC particle of 160μm, 125μm as well as 38μm with a weight ratio of 17:7:1 and 50%vol of β-SiC particle reinforcing. © 2017 Trans Tech Publications.


Park Y.,North Carolina State University | Lu J.,Silicon Energy | Rozgonyi G.,North Carolina State University
Electronic Materials Letters | Year: 2010

In this article, segregation and thermal dissociation kinetics of hydrogen at a large-angle general grain boundary in crystalline silicon have been investigated using deuterium, a readily identifiable isotope that duplicates hydrogen chemistry. Segregation or trapping of introduced deuterium (hydrogen) was found to take place at the (110)/(001) Si grain boundary. The segregation coefficient (k) of deuterium (hydrogen) at the grain boundary was determined as k≈24±3 at 100°C. Thermal dissociation of deuterium (hydrogen) from the grain boundary obeyed first-order kinetics with an activation energy of ~1.62 eV.


Yang J.-Q.,Xi'an University of Science and Technology | Lu S.-H.,Xi'an University of Science and Technology | Lu S.-H.,Silicon Energy | Hua X.-H.,Xi'an University of Science and Technology | And 9 more authors.
Materials Science Forum | Year: 2015

In this paper, reporting a new way to directly prepare quality of carbon materials such as artificial graphite, like-graphitization carburant and senior carbonaceous reductant et al,which is prepared from anthracite under ultra-high temperature without any other additional process and catalyst. The chemical composition of carbon materials was analysed; the electrical resistivity was tested; the composition of phase and the graphitization degree was tested by XRD; the microstructure was characterized by SEM and the degree of crystallization and crystal defect was characterized by the Raman diffraction spectrum. At the same time, the graphitization method was discussed during ultra-high temperature. The results show that good carburant and carbonaceous reductant can be prepared by anthracite which was graphitization under ultra-high temperature;The microstructure of carbon materials which was prepared by anthracite that was graphitization during ultra-high temperature is more ordered than that of raw anthracite, its graphitization degree also increase significantly; When the ultra-high graphitization temperature is above 2600 ℃, carbon materials which is like to pure graphite have a small amount of structural defects and distortion; the high quality carbon materials prepared by graphitization method under ultra-high temperature,it is a simple process with low cost and high added value, and its prospects of application is broad. © (2015) Trans Tech Publications, Switzerland.


Batra N.,National Physical Laboratory India | Batra N.,Silicon Energy | Gope J.,Silicon Energy | Vandana,Silicon Energy | And 6 more authors.
AIP Advances | Year: 2015

The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in Tdep which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for Tdep ≤ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min). © 2015 Author(s).


Zhao Y.-H.,CAS Shenyang Institute of Metal Research | Xiao J.-Q.,CAS Shenyang Institute of Metal Research | Huang R.-F.,Silicon Energy | Wen H.,Silicon Energy | Wen L.-S.,CAS Shenyang Institute of Metal Research
Gongneng Cailiao/Journal of Functional Materials | Year: 2010

Silicon thin films have been widely investigated and applied in industry, as a very important raw material for silicon thin films solar cells prepared. But various structure defects and the defect density in the films have a major impact on conversion efficiency and stability of solar cells. In this paper, defect type of silicon thin films, defect methodology and the effect of these defects on the properties of the silicon thin film solar cells are reviewed, which is expected for improving silicon thin films qualities and conversion efficiency and stability of solar cells.


Trademark
Energy Hippo Inc., McKinstry, Itron Inc. and Silicon Energy | Date: 2011-02-15

COMPUTER SOFTWARE AND SOFTWARE PLATFORM ACCESSED VIA GLOBAL COMMUNICATION NETWORKS FOR MANAGING ENERGY COSTS AND USES AND FOR OPTIMIZING ENERGY PROCUREMENT PROCEDURES BY COLLECTING, MANAGING, ANALYZING, MINING, INTEGRATING, REPORTING, BENCHMARKING, VALIDATING, EDITING AND ESTIMATING ENERGY OR ENERGY RELATED DATA AND INFORMATION, MANAGING LOAD - REDUCTION PROGRAMS, FORECASTING, MANAGING, ANALYZING, AND REPORTING ENERGY AND ENERGY RELATED DATA.


Silicon Energy manufactures durable solar PV modules on the Iron Range. Minnesotans can support local manufacturing for a healthier economy and environment when choosing high quality, locally made Silicon Energy solar PV ...


Silicon Energy | Entity website

Products Voyageur PV Module Silicon Energy manufactures a high quality, double-glass PV module with high-efficiency, US-made monocrystalline cells. Theglass backsheet versus astandard polymer backing means the Voyageur offers improved protection againstoutdoorelements,backed bya 30-year power warranty ...


Silicon Energy | Entity website

About Us Silicon Energy is committed to sustainable products and manufacturing in the USA. In August 2011, Silicon Energy MN opened in the Northeastern Minnesota community of Mt ...


Silicon Energy | Entity website

Home How do I go solar with Silicon Energy? How do I go solar with Silicon Energy? Contact uswe can recommend qualified solar installers in your area who can design and install your project. Additional resources: Check out the solar potential of your location with the U of M Solar Suitability App ...

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