Entity

Time filter

Source Type

Port Elliot, Australia

Silvestri L.,University of New South Wales | Dunn K.,Silanna Semiconductor | Prawer S.,University of Melbourne | Ladouceur F.,University of New South Wales
Applied Physics Letters | Year: 2011

The properties of Si and O donors in wurtzite AlN have been studied by means of hybrid functional calculations, finding that both impurities form DX centres. In the case of Si, the stable DX centre is close in energy to the substitutional donor state and to a second metastable DX centre, thus explaining both the persistent effects and the broad range of activation energies observed experimentally. Ionisation energies have been computed for both Si and O donor states. © 2011 American Institute of Physics. Source


Silvestri L.,University of New South Wales | Dunn K.,Silanna Semiconductor | Prawer S.,University of Melbourne | Ladouceur F.,University of New South Wales
EPL | Year: 2012

Formation energies and concentrations of the most relevant point defects in n-type wurtzite AlN are obtained by first-principle calculations employing a hybrid functional. We show that the incorporation of Si is favoured over O under N-rich growth conditions, but not under Al-rich conditions. The triply negatively charged Al vacancy is found to be the defect with the lowest formation energy in n-type AlN and it is therefore expected to be the main compensating acceptor. Under typical physical vapor-phase transport growth conditions, we predict Si concentrations of up to 10 20 cm - 3 and net donor concentrations of about 10 18 cm - 3, in good agreement with available experimental data. Copyright © 2012 EPLA. Source


Li F.,Institute of Photonics and Optical Science IPOS | Jackson S.D.,Institute of Photonics and Optical Science IPOS | Grillet C.,Institute of Photonics and Optical Science IPOS | Magi E.,Institute of Photonics and Optical Science IPOS | And 9 more authors.
Optics Express | Year: 2011

We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8dB/cm at λ = 1550nm, ∼1.1 to 1.4dB/cm at λ = 2080nm and < 2dB/cm at λ = 5.18 μm. © 2011 Optical Society of America. Source


Hudson D.D.,University of Sydney | Singh N.,University of Sydney | Yu Y.,Australian National University | Grillet C.,Ecole Centrale Lyon | And 7 more authors.
2015 IEEE Summer Topicals Meeting Series, SUM 2015 | Year: 2015

We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm. © 2015 IEEE. Source


Singh N.,University of Sydney | Hudson D.D.,University of Sydney | Yu Y.,Australian National University | Grillet C.,Ecole Centrale Lyon | And 7 more authors.
Conference on Lasers and Electro-Optics Europe - Technical Digest | Year: 2015

We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. This establishes SOS as a promising new platform for integrated nonlinear photonics in the mid-IR. © 2015 OSA. Source

Discover hidden collaborations