SIJTechnology Inc.

Ibaraki, Japan

SIJTechnology Inc.

Ibaraki, Japan
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Japan National Institute of Advanced Industrial Science, Technology and Sijtechnology Inc. | Date: 2017-07-12

A processing device for a metal material, comprising: an airtight container for housing a specimen thereinside; an oxygen pump for extracting oxygen molecules from a gas discharged from the airtight container; a circulation means for returning the gas into the airtight container; and a plasma generation means present inside the airtight container for converting the gas returned from the circulation means into plasma and exposing the specimen thereto.

Leppaniemi J.,VTT Technical Research Center of Finland | Mattila T.,VTT Technical Research Center of Finland | Eiroma K.,VTT Technical Research Center of Finland | Miyakawa T.,Japan National Institute of Advanced Industrial Science and Technology | And 3 more authors.
IEEE Electron Device Letters | Year: 2014

A printed lateral resistive fuse-type write-once-read-many (WORM) memory on paper substrate is demonstrated. The memory writing process is based on breaking of a silver nanoparticle conductor. Low-voltage and low-current writability demonstrated with printed batteries are enabled by a μ m 2-range cross-sectional bit area that are achieved by super-fine inkjet technology. Supported by the statistical distribution of the writing times, the bit writing process is attributed to electromigration of silver and the required current density for fusing is found to be 34 mA\μ m2. The results show an improvement in memory retention time when compared with structurally similar printed antifuse-type WORM memories. © 2014 IEEE.

Shirakawa N.,Japan National Institute of Advanced Industrial Science and Technology | Murata K.,Japan National Institute of Advanced Industrial Science and Technology | Murata K.,SIJTechnology Inc. | Kajihara Y.,IOX Co. | And 8 more authors.
Japanese Journal of Applied Physics | Year: 2013

We have successfully printed wires of 5 m line widths and spaces in copper nanoparticle ink with a super-inkjet printer. The wires show resistivity as low as 8.1 cm after sintering at 250 C in an extremely low oxygen atmosphere generated by an oxygen pump. To our knowledge, this is the first report of micron-scale copper wiring formed by a direct printing method without any masks or templates. © 2013 The Japan Society of Applied Physics.

Takano K.,Osaka University | Kawabata T.,Osaka University | Murata K.,Japan National Institute of Advanced Industrial Science and Technology | Masuda K.,SIJTechnology Inc. | And 3 more authors.
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide | Year: 2010

Photoconductive antennas loaded with metaatoms have been fabricated by the super-fine ink-jet printing technology to control terahertz emission characteristics. The resonant enhancement has been observed at the LC resonant frequencies of the metaatom and it is analyzed by the finite-difference time-domain simulation.

Shirakawa N.,Japan National Institute of Advanced Industrial Science and Technology | Kajihara K.,IOX Co. | Kashiwagi Y.,Osaka Municipal Technical Research Institute | Murata K.,SIJTechnology Inc.
ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference | Year: 2015

Two technologies have been developed and successfully applied for forming fine-pitch copper wiring on demand. They are an ultra-fine inkjet called super-inkjet and cool powder sintering (CPS) utilizing the oxygen pump technology. Super-inkjet has realized 3 micrometer line widths and spaces drawn in copper nanoparticle inks. CPS has turned such lines into bulk metal without a void with low resistivity of 2.6 microhm cm at only 180 degrees Celsius. This is a new route to manufacturing copper interconnect on plastic substrates without the need of making masks. © 2015 The Japan Institute of Electronics Packaging.

A hole formation method including applying a pillar-forming liquid to a base material, to thereby form a pillar; applying an insulating film-forming material to the base material on which the pillar has been formed, to thereby form an insulating film; removing the pillar to form an opening in the insulating film; and heat treating the insulating film in which the opening has been formed.

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