Prudaev I.A.,Tomsk State University |
Romanov I.S.,Tomsk State University |
Kopyev V.V.,Tomsk State University |
Brudnyi V.N.,Tomsk State University |
And 4 more authors.
Russian Physics Journal | Year: 2016
We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple InxGa1–xN/GaN quantum wells with short-period InyGa1–yN/GaN superlattices containing small amounts of In at high levels of optical pumping. Introduction of an InyGa1–yN/GaN superlattice from the side of the n-region of a LED InxGa1–xN/GaN heterostructure allows to increase the value of its internal quantum efficiency presumably by reducing the quantum-confined Stark effect and Auger recombination rate. © 2016, Springer Science+Business Media New York.
Andronov A.A.,RAS Institute for Physics of Microstructures |
Dodin E.P.,RAS Institute for Physics of Microstructures |
Zinchenko D.I.,RAS Institute for Physics of Microstructures |
Nozdrin Yu.N.,RAS Institute for Physics of Microstructures |
And 2 more authors.
Quantum Electronics | Year: 2010
The experimental and numerical studies of the transport properties and wave functions of electrons in GaAs/Al xGa 1-xAs superlattices with weak barriers in a strong electric field demonstrate the possibility of terahertz lasing on transitions between Wannier - Stark ladders, which can be tuned by applying voltage. The calculated gain can be as high as 500 cm -1, which exceeds several times the values characteristic of modern THz quantum cascade lasers. Thus, one would expect lasing to occur in a simple n +superlattice-n + stripe structure. Such lasers, due to the possibility of wide tuning and simplicity of the superlattices they are based on, could compete with cascade lasers. © 2010 Kvantovaya Elektronika and Turpion Ltd.
Degtyareva N.S.,Inject Ltd. |
Kondakov S.A.,Inject Ltd. |
Mikayelyan G.T.,Inject Ltd. |
Gorlachuk P.V.,Sigma Plus Ltd. |
And 4 more authors.
Quantum Electronics | Year: 2013
We have developed the effective design of semiconductor heterostructures, which allow one to fabricate cw laser diodes emitting in the 750 - 790-nm spectral range. The optimal conditions for fabrication of GaAsP/AlGaInP/GaAs heterostructures by MOCVD have been determined. It is shown that the use of quantum wells with a precisely defined quantity mismatch reduces the threshold current density and increases the external differential efficiency. The results of studies of characteristics of diode laser bars fabricated from these heterostructures are presented. © 2013 Kvantovaya Elektronika and Turpion Ltd.