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Jeonju, South Korea

Bouangeune D.,Chonbuk National University | Vilathong S.,National University of Laos | Cho D.-H.,Sigetronics Inc. | Shim K.-H.,Chonbuk National University | And 2 more authors.
Journal of Semiconductor Technology and Science | Year: 2014

This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below 10-12 A, a low capacitance of 0.07 fF/μm2, and low triggering voltage of 8.5 V at 5.6×10-5A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices. © 2014, Institute of Electronics Engineers of Korea. All rights reserved. Source

SIGETRONICS Inc., Electronics and Telecommunications Research Institute | Date: 2014-01-14

Provided is a method of fabricating a semiconductor package, including preparing a die including a first metal layer and a second metal layer which are sequentially stacked on a silicon substrate, preparing a package substrate including a lead frame, and forming an adhesive layer between the lead frame and the first metal layer and attaching the die to the package substrate, wherein the forming of the adhesive layer is performed by eutectic bonding between the silicon substrate and the second metal layer. According to the semiconductor package according to an embodiment of the present invention, an adhesive layer can be easily formed by eutectic bonding without a process of forming a preform.

Bouangeune D.,Chonbuk National University | Hong W.-K.,Chonbuk National University | Choi S.-S.,Sigetronics Inc. | Choi C.-J.,Chonbuk National University | And 5 more authors.
1st IEEE Global Conference on Consumer Electronics 2012, GCCE 2012 | Year: 2012

A transient voltage suppression (TVS) diode with abrupt junctions has been developed using the low-temperature epitaxy and process technology. The triggering voltage at 6 V could be precisely controlled by the thickness and dopant concentration. The reliability of TVS device is confirmed based on its electrostatic discharge (ESD) strength in conjunction with the transmission line pulse (TLP) test. As a result, the device could exceed 28 A TLP, ±8 kV MM, and could withstand IEC 61000-4-2 up to ±19kV. Moreover, TVS diode exhibited very low leakage current, small capacitance, fast respond time and high cut off frequency of 2nA, 60 pF, 8 ps, and 52 MHz, respectively. TVS diode can be also used for a digital communication line as well as an ESD/EMI filter attenuating the RF noise in MHz range. © 2012 IEEE. Source

Bouangeune D.,Chonbuk National University | Choi S.-S.,Sigetronics Inc. | Choi C.-J.,Chonbuk National University | Kil Y.-H.,Chonbuk National University | And 3 more authors.
Electronic Materials Letters | Year: 2014

Five transient voltage suppression (TVS) diodes with breakdown voltages (BV) of 6, 7, 11, 13 and 15 V have been developed using low-temperature (LT) epitaxy technology and an LT fabrication process. The electrostatic discharge (ESD) performance and temperature dependency of reverse leakage current are investigated by applying the IEC61000-4-2 (IEC) standard and an I-V-T analysis. The TVS diodes exhibited excellent ESD robustness, exceeding the standard ESD requirement of IEC level 4, 8 kV in contact discharge, while also maintaining the reverse leakage current level below 10−9 A. Excellent ESD performance was found to be relevant for lower breakdown voltage TVS diodes. The reverse leakage currents showed substantial changes in thermal activation energy from 0.43 to 0.6 eV with respect to BV control from 6 to 15 V. The increased activation energy at high BV was attributed to the transition of the conduction mechanism from tunneling mode to generation-recombination mode. The reduction of reverse leakage current from a generation-recombination to tunneling conduction mechanism is expected to improve the ESD performance of TVS diodes. © 2014, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht. Source

Bouangeune D.,Chonbuk National University | Choi S.-S.,Sigetronics Inc. | Choi C.-J.,Chonbuk National University | Cho D.-H.,Sigetronics Inc. | Shim K.-H.,Chonbuk National University
Journal of Semiconductor Technology and Science | Year: 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed p-n++-p- multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using IV, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multijunctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K - 450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped n++ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as 0.2 Ω, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ± 4.0 kV of MM and ± 14 kV of IEC, and exceeding ± 8 kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in p-n++p- multi-junctions. Source

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