Sigetronics Inc.

Jeonju, South Korea

Sigetronics Inc.

Jeonju, South Korea
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Lee Y.,Chonbuk National University | Yu J.,Chonbuk National University | Jang T.,Chonbuk National University | Shim K.,Chonbuk National University | Cho D.,Sigetronics Inc.
New Physics: Sae Mulli | Year: 2017

In this research, CF4 plasma treatment was performed to improve the reliability of the Schottky barrier diode. The investigation of the Schottky barrier diode focused on improving in the leakage current, breakdown voltage and electrostatic discharge (ESD) characteristics of the device. The CF4 plasma treatment was performed using CF4 (30 sccm) gas under a 50 W RF power and a 10 mTorr working pressure on the surface of an AlGaN layer for 30 seconds. The current of the device was decreased when the plasma treatments were used. The forward current was decreased 7-12 times, and the leakage current was decreased 95-1100 times, as well. However, the breakdown voltage and the ESD characteristics of the devices were improved because of the decrease in the leakage current. The measurements of ESD were conducted using human body model (HBM), and the ESD characteristics of the device were improved by plasma treatments. With increasing area of the Schottky diode, the ESD characteristics were dramatically improved. Therefore, the CF4 plasma treatment in the area of the AlGaN/GaN SBD can be concluded to have improved the robustness of the device (resistance to an ESD) by decreasing the leakage current. © 2017, Korean Physical Society. All rights reserved.


Bouangeune D.,Chonbuk National University | Hong W.-K.,Chonbuk National University | Choi S.-S.,Sigetronics Inc. | Choi C.-J.,Chonbuk National University | And 5 more authors.
1st IEEE Global Conference on Consumer Electronics 2012, GCCE 2012 | Year: 2012

A transient voltage suppression (TVS) diode with abrupt junctions has been developed using the low-temperature epitaxy and process technology. The triggering voltage at 6 V could be precisely controlled by the thickness and dopant concentration. The reliability of TVS device is confirmed based on its electrostatic discharge (ESD) strength in conjunction with the transmission line pulse (TLP) test. As a result, the device could exceed 28 A TLP, ±8 kV MM, and could withstand IEC 61000-4-2 up to ±19kV. Moreover, TVS diode exhibited very low leakage current, small capacitance, fast respond time and high cut off frequency of 2nA, 60 pF, 8 ps, and 52 MHz, respectively. TVS diode can be also used for a digital communication line as well as an ESD/EMI filter attenuating the RF noise in MHz range. © 2012 IEEE.


Patent
SIGETRONICS Inc., Electronics and Telecommunications Research Institute | Date: 2014-01-14

Provided is a method of fabricating a semiconductor package, including preparing a die including a first metal layer and a second metal layer which are sequentially stacked on a silicon substrate, preparing a package substrate including a lead frame, and forming an adhesive layer between the lead frame and the first metal layer and attaching the die to the package substrate, wherein the forming of the adhesive layer is performed by eutectic bonding between the silicon substrate and the second metal layer. According to the semiconductor package according to an embodiment of the present invention, an adhesive layer can be easily formed by eutectic bonding without a process of forming a preform.


Bouangeune D.,Chonbuk National University | Lee Y.-J.,Chonbuk National University | Cho D.-H.,Sigetronics Inc. | Shim K.-H.,Chonbuk National University | And 2 more authors.
Materials Transactions | Year: 2014

A transient voltage suppression (TVS) diode with abrupt junctions was fabricated using low-temperature epitaxy. The effect of electrostatic discharge (ESD) stress on the reverse leakage current conductive mechanism of the TVS diode was investigated using IEC61000-4-2 (IEC) standard analysis, in accordance with temperature-dependent current-voltage (I-V) characteristics. The fabricated TVS diode showed excellent ESD robustness, with negligible degradation up to ±19.5 kV and failure at ±20 kV stress. The ESD stress evidently led to the generation of shallow and deep defect states in the depletion region located 0.521.08 eV below the conduction band, and these states served as a main contributor to the resulting reverse leakage current. In devices to which IEC peak voltage stresses of less than ±19.5 kV had been applied, reverse conduction was dominated by generation-recombination current; the application of the ±20 kV failure stress caused reverse conduction to become dominated by a combination of tunneling current via deep defects and Poole-Frenkel barrier lowering. The proposed TVS can serve as a highly stable and reliable ESD protector of electronic components, serving an evolving need in nanoscale technology. © 2014 The Japan Institute of Metals and Materials.


Bouangeune D.,Chonbuk National University | Choi S.-S.,Sigetronics Inc. | Choi C.-J.,Chonbuk National University | Kil Y.-H.,Chonbuk National University | And 3 more authors.
Electronic Materials Letters | Year: 2014

Five transient voltage suppression (TVS) diodes with breakdown voltages (BV) of 6, 7, 11, 13 and 15 V have been developed using low-temperature (LT) epitaxy technology and an LT fabrication process. The electrostatic discharge (ESD) performance and temperature dependency of reverse leakage current are investigated by applying the IEC61000-4-2 (IEC) standard and an I-V-T analysis. The TVS diodes exhibited excellent ESD robustness, exceeding the standard ESD requirement of IEC level 4, 8 kV in contact discharge, while also maintaining the reverse leakage current level below 10−9 A. Excellent ESD performance was found to be relevant for lower breakdown voltage TVS diodes. The reverse leakage currents showed substantial changes in thermal activation energy from 0.43 to 0.6 eV with respect to BV control from 6 to 15 V. The increased activation energy at high BV was attributed to the transition of the conduction mechanism from tunneling mode to generation-recombination mode. The reduction of reverse leakage current from a generation-recombination to tunneling conduction mechanism is expected to improve the ESD performance of TVS diodes. © 2014, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.


Pharkphoumy S.,Chonbuk National University | Khurelbaatar Z.,Chonbuk National University | Janardhanam V.,Chonbuk National University | Choi C.-J.,Chonbuk National University | And 5 more authors.
Transactions on Electrical and Electronic Materials | Year: 2016

We have developed new electrostatic discharge (ESD) protection devices with, bidirectional flip chip transient voltage suppression. The devices differ in their epitaxial (epi) layers, which were grown by reduced pressure chemical vapor deposition (RPCVD). Their ESD properties were characterized using current-voltage (I-V), capacitance-voltage (CV) measurement, and ESD analysis, including IEC61000-4-2, surge, and transmission line pulse (TLP) methods. Two BD-FCTVS diodes consisting of either a thick (12 µm) or thin (6 µm), n-Si epi layer showed the same reverse voltage of 8 V, very small reverse current level, and symmetric I-V and C-V curves. The damage found near the corner of the metal pads indicates that the size and shape of the radius governs their failure modes. The BD-FCTVS device made with a thin n-epi layer showed better performance than that made with a thick one in terms of enhancement of the features of ESD robustness, reliability, and protection capability. Therefore, this works confirms that the optimization of device parameters in conjunction with the doping concentration and thickness of epi layers be used to achieve high performance ESD properties. © 2016 KIEEME. All rights reserved.


Bouangeune D.,Chonbuk National University | Cho D.-H.,Sigetronics Inc | Yun H.-J.,Chonbuk National University | Yun H.-J.,Korea Basic Science Institute | And 3 more authors.
Electronic Materials Letters | Year: 2015

Based on low temperature epitaxy technology, a bidirectional transient voltage suppression (TVS) diode with abrupt multi-junctions was developed. The bidirectional triggering voltage of ±16 V was controlled by the thickness and dopant concentration in the multi-junctions using a reduced-pressure chemical vapor deposition (RPCVD) process. The manufactured TVS diode showed a small leakage current density and dynamic resistance of less than 5.1 × 10-14 A/µm2 and 1 O, respectively, which could be associated with the epitaxially grown abrupt multijunctions. The transmission line pulse (TLP) analysis results demonstrated that the bidirectional TVS diodes were capable of withstanding a peak pulse current of up to ±20 A or ±1.02 × 10-3 A/µm2, which is equivalent to ±40 kV of the human body model (HBM) and ±12 kV of IEC61000-4-2 (IEC). Nevertheless, the electrostatic discharge (ESD) design window showed that bidirectional TVS diodes meet IEC level 4 standard ESD protection requirements (8 kV in contact discharge). In addition, because of the bidirectional structure, the TVS devices exhibited a small capacitance of 4.9 pF, which confirms that the TVS diode can be used for protecting high data rate communication lines (over 500 Mbps) from ESD shock. © KIM and Springer.


Bouangeune D.,Chonbuk National University | Vilathong S.,National University of Laos | Cho D.-H.,Sigetronics Inc | Shim K.-H.,Chonbuk National University | And 2 more authors.
Journal of Semiconductor Technology and Science | Year: 2014

This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below 10-12 A, a low capacitance of 0.07 fF/μm2, and low triggering voltage of 8.5 V at 5.6×10-5A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices. © 2014, Institute of Electronics Engineers of Korea. All rights reserved.


Bouangeune D.,Chonbuk National University | Choi S.-S.,Sigetronics Inc | Choi C.-J.,Chonbuk National University | Cho D.-H.,Sigetronics Inc | Shim K.-H.,Chonbuk National University
Journal of Semiconductor Technology and Science | Year: 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed p-n++-p- multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using IV, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multijunctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K - 450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped n++ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as 0.2 Ω, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ± 4.0 kV of MM and ± 14 kV of IEC, and exceeding ± 8 kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in p-n++p- multi-junctions.


Bouangeune D.,Chonbuk National University | Kil Y.-H.,Chonbuk National University | Choi S.-S.,Sigetronics Inc. | Cho D.-H.,Sigetronics Inc. | And 3 more authors.
Materials Transactions | Year: 2013

A bidirectional transient voltage suppressor (TVS) Zener diode was fabricated with abrupt junctions using the lowerature epitaxy process. The effects of various electrostatic discharge (ESD) stresses on the electrical properties are demonstrated, such as the currentvoltage (IV) and 1/f noise power spectral density (PSD). Very sharp and uniform bidirectional multi-junctions result in good symmetric IV behavior over a wide range of operating temperatures of 300450 K. The differential resistance in the breakdown region is only 0.2, and the reverse leakage current density is completely suppressed to 1.5 © 104A/m2. The thermal activation energy obtained from the Arrhenius plot is nearly equal to half the band gap of Si, indicating that the reverse leakage current is dominated by thermal generation at the depletion edges for the entire reverse bias regions. The manufacture bidirectional TVS devices exhibit excellent ESD robustness, regardless of the stress conditions of the human body model and electrical fast transient. However, a 4.5 kV machine model and 13 kV IEC61000-4-2 stresses led to severe damage of the epitaxially grown junction, resulting in rapid increases in both the reverse leakage current and 1/f noise PSD. © 2013 The Japan Institute of Metals and Materials.

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