Entity

Time filter

Source Type

Jinan, China

Liang Q.-R.,Shandong University | Liang Q.-R.,SICC Materials Co. | Hu X.-B.,Shandong University | Chen X.-F.,Shandong University | And 3 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2015

A novel chemical mechanical planarization (CMP) technique was demonstrated using hybrid polishing liquid which was composed of strong oxidizer abrasive slurry (SOAS) with KMnO4. After double face polishing with different mass concentrations of KMnO4, 4H-SiCsubstrates were assessed. Surface roughness and wafer removal rate were measured by atomic force microscopy (AFM) and precision scale, respectively. The results show that the SOAS with appropriate KMnO4 concentration can greatly raise the material removal rate (MRR) and improve the surface quality of 4H-SiCsubstrate. ©, 2015, Chinese Ceramic Society. All right reserved. Source


Liang Q.-R.,Shandong University | Liang Q.-R.,SICC Materials Co. | Zong Y.-M.,SICC Materials Co. | Wang X.-J.,SICC Materials Co. | And 3 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2015

The effect of different diamond powder with nanometer sizes on material removal rate (MRR) and the surface quality of SiC substrate in the procedure of mechanical polishing (MP) were investigated. The diamond powder samples were purchased from the commercial market and their size were labeled as W0. 5-1 μm. Three kinds of polishing slurries were made using the three diamond powder samples which have different size distributions and micrographs. The surface roughness of SiC substrates polished by different abrasives was measured by atomic force microscopy (AFM). It was found that the smooth nano-diamond particles and concentrated size distribution were favorable to get high surface quality after polishing. The edges and corners were responsible for the high MRR. ©, 2015, Rengong Jingti Xuebao/Journal of Synthetic Crystals. All right reserved. Source


Yu G.,Shandong University | Yu G.,SICC Materials Co. | Hu X.,Shandong University | Wang X.,SICC Materials Co. | And 2 more authors.
Journal of Crystal Growth | Year: 2014

Low angle grain boundaries (LAGB) are one of the most commonly seen defects in sapphire crystals. In this paper, we have studied the origin, topography and orientation of LAGB in large sapphire crystals grown by the Kyropoulos method through etching, polaroscopy, optical microscopy as well as synchrotron white-beam X-ray topography. The results show that the LAGB starts mainly from the atomic layers mismatch caused by environmental fluctuations. The misorientation angle of the grain boundaries is 2-3°, and the grain boundaries are distributed around 101¯0 direction. © 2014 Elsevier B.V. Source


Yu G.-J.,Shandong University | Yu G.-J.,SICC Materials Co. | Zong Y.-M.,SICC Materials Co. | Zhang Z.-H.,SICC Materials Co. | And 3 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2014

Bubbles are one of the most common known defects in sapphire crystals. The incorporation theory and the distribution of bubbles in sapphire crystal grown by the Kyropoulos method were studied. The results show that the distributions of the bubbles are closely related to the thermal filed structure, and the direct reason of the bubbles formation is the high crystal growth velocity in the crystallization interface. Bubbles in crystal can be eliminated through appropriately adjusting of growth velocity. Source

Discover hidden collaborations