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Zhao X.,Sun Yat Sen University | Duan C.,Foshan Polytechnic | Liang Z.,Sun Yat Sen University | Shen H.,Sun Yat Sen University | Shen H.,ShunDe SYSU Institute for Solar Energy Systems
RSC Advances | Year: 2014

Silver nanoparticle arrays are well known to show characteristic surface plasmon properties sensitively dependent on the particles size, shape, surrounding dielectric and so on. In the present study, we investigated the influence of the silver film thicknesses, the dielectric materials and the annealing temperatures on the morphologies and the corresponding optical properties of silver nanoparticle arrays produced by thermal treatment of silver thin films. Different levels of dependence of array morphologies on the original silver film thicknesses, the dielectric environment and annealing conditions were identified. The variations of surface plasmon absorption bands can be correlated and explained by the morphological features, such as the particle size, aspect ratio, and coverage fraction. This correlation may be employed for the manipulation of desirable optical properties. Moreover, we attempted to integrate silver nanoparticle arrays into crystalline silicon solar cells and excellent light-trapping and spectrum-modification performance was observed. © 2014 The Royal Society of Chemistry. Source


Zhao X.,Sun Yat Sen University | Liu B.,Sun Yat Sen University | Yin Q.,Sun Yat Sen University | Duan C.,Foshan Polytechnic | And 3 more authors.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 | Year: 2014

Light trapping induced by plasmonic metal nanoparticles is of extensive interest for photovoltaics. In this paper, plasmonic effect of silver nanoparticles embedded in dielectric layers hybrid structures on c-Si photoactive absorbing material is presented. Dielectric SiNx and SiO2 layers were considered and deposited by plasma enhanced chemical vapor deposition (PECVD) and electron beam evaporation (EBE) respectively. Silver nanoparticles were prepared by annealing of thermally evaporated silver thin films ranging from 5 to 25 nm in N2 gas atmosphere at 260 °C for an hour. For comparative study, thicknesses of each layer including silver thin flim, SiNx spacer layer and c-Si wafer were varied to attempt preliminary judgement of the appropriate structure. It is shown that reflection near bandgap of Si can be reduced while silver nanoparticles are fabricated on SiNx layer and covered by SiO2 layer. By comparing the morphologies of nanoparticle arrays resulted from different thicknesses of silver thin film, it is indicated that nanoparticle arrays with large average sizes and high surface coverage on the front surface can greatly increase undesirable reflection in visible wavelength region in spite of their advantage in reflection reducing at longer wavelength. In addition, light trapping of the hybrid structures for varying thicknesses of SiNx spacer layer and c-Si wafer were also investigated respectively. Results suggest that hybrid plasmonic structures (HPS) can play an even greater part as c-Si wafers become thinner. © 2014 IEEE. Source


Chen D.M.,Sun Yat Sen University | Liang Z.C.,Sun Yat Sen University | Zhuang L.,Sun Yat Sen University | Lin Y.H.,ShunDe SYSU Institute for Solar Energy Systems | And 2 more authors.
Applied Energy | Year: 2012

Selective emitter for silicon solar cell was realized by employing a-Si thin films as the semi-transparent diffusion barrier. The a-Si thin films with various thicknesses (∼10-40nm) were deposited by the electron-beam evaporation technique. Emitters with sheet resistances from 37 to 145Ω/□ were obtained via POCl3 diffusion process. The thickness of the a-Si diffusion barrier was optimized to be 15nm for selective emitter in our work. Homemade mask which can dissolve in ethanol was screen-printed on a-Si film to make pattern. The a-Si film was then patterned in KOH solution to form finger-like design. Selective emitter was obtainable with one-step diffusion with patterned a-Si film on. Combinations of sheet resistances for the high-/low-level doped regions of 39.8/112.1, 36.2/88.8, 35.4/73.9 were obtained. These combinations are suitable for screen-printed solar cells. This preparation method of selective emitter based on a-Si diffusion barrier is a promising approach for low cost industrial manufacturing. © 2011 Elsevier Ltd. Source

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