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Yangsan, South Korea

Heo S.B.,University of Ulsan | Lee H.M.,University of Ulsan | Kim D.,University of Ulsan | Choi D.H.,Shinki Intermobile | And 2 more authors.
Transactions on Electrical and Electronic Materials | Year: 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasmaassisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage (-Vb) was varied from -50 to -150 V to accelerate the effects of nitrogen ions (N+) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 Vb (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 Vb (bias voltage) exhibited higher hardness than other films. © 2011 KIEEME. All rights reserved. Source

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