Time filter

Source Type

Patent
Shindengen Electric Manufacturing | Date: 2017-04-05

Provided is a power conversion device that can suppress a surge to be generated when a load, such as a battery, is disconnected from an output of an AC generator. A rectifier circuit connected between an output portion of the AC generator and a first load rectifies the output of the AC generator and supplies the rectified output to the first load. A switch circuit connected between the output portion of the AC generator and the second load rectifies the output of the AC generator and supplies the rectified output to the second load, on condition that a drive signal is in a first signal state indicating permission of a power supply from the AC generator to the second load. Additionally, the switch circuit transitions from a conductive state to a non-conductive state in response to the output of the AC generator, on condition that the drive signal is in a second signal state indicating prohibition of the power supply from the AC generator to the second load. A driver circuit generates the drive signal and supplies the generated drive signal to a control terminal of the switch circuit.


Patent
Shindengen Electric Manufacturing | Date: 2017-05-03

A semiconductor module (100) has a first insulating substrate (11) ; a first conductor layer (12) provided on a mounting surface of the first insulating substrate (11); a first electronic element (13) provided on the first conductor layer (12) ; a sealing resin (80), which covers an overall mounting region within the mounting surface of the first insulating substrate (11), the first conductor layer (12), and the first electronic element (13) ; and a frame body (70), which is made of metal and covers the overall sealing resin (80).


Patent
Shindengen Electric Manufacturing | Date: 2017-04-26

A wide gap semiconductor device comprises a first conductive-type semiconductor layer (32); a second conductive-type region (41), (42) that is provided on the first conductive-type semiconductor layer (32); a first electrode (1), of which a part is disposed on the second conductive-type region (41), (42) and the other part is disposed on the first conductive-type semiconductor layer (32); an insulating layer (51), (52), (53) that is provided adjacent to the first electrode (10) on the first conductive-type semiconductor layer (32) and that extends to an end part of the wide gap semiconductor device; and a second electrode (20) that is provided between the first electrode (10) and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer (32).


Patent
Shindengen Electric Manufacturing | Date: 2017-05-17

Provided is a semiconductor device 100 of the present invention which includes an element portion 170 and a gate pad portion 180 on the same wide gap semiconductor substrate 110. The element portion 170 includes a first trench structure 146 having a plurality of first protective trenches 142 and first buried layers 144 formed deeper than gate trenches 118. The gate pad portion 180 includes a second trench structure 156 having a plurality of second protective trenches 152 and second buried layers 154. The second trench structure 156 is either one of a structure where the second trench structure includes: a p-type second semiconductor region 158 and a second buried layer made of a conductor or a structure where the second trench structure includes a second buried layer formed of a metal layer which forms a Schottky contact. The second buried layer 154 is electrically connected with the source electrode layer 128. According to the semiconductor device 100 of the present invention, it is possible to provide a semiconductor device which has a high breakdown strength, hardly generates irregularities in electric properties, can perform high speed switching, and has a gate pad portion which is hardly broken down.


Patent
Shindengen Electric Manufacturing | Date: 2016-02-10

An ignition control apparatus (100) according to one embodiment of the present invention is an ignition control apparatus which generates, in an ignition coil, a voltage to be supplied to a spark plug that is provided in an internal combustion engine on the basis of a pulse signal induced in the ignition coil of the internal combustion engine, wherein the ignition control apparatus comprises at least a switch element (160) for passing current through and discharge the ignition coil, and a controlling unit (140) that acquires the timing for discharge the ignition coil in response to a first pulse of the pulse signal, and controls the switch element so that a current flows through the ignition coil in response to a second pulse that follows the first pulse and the ignition coil is opened on the basis of the discharge timing acquired in response to the first pulse.


Patent
Shindengen Electric Manufacturing | Date: 2016-04-20

A method of manufacturing a semiconductor device includes the steps of: forming a semiconductor layer on a first main surface of a semiconductor substrate made of crystals having a wide band gap; forming lattice defects on a second main surface on a side opposite to the first main surface of the semiconductor substrate; and emitting a laser beam having a longer wavelength than an absorption edge wavelength which is a wavelength of a light having the lowest energy which the crystals absorb, to a lower surface of the semiconductor substrate after the step of forming the lattice defects; and forming an electrode on the second main surface of the semiconductor substrate after the step of emitting the laser beam.


Provided is a glass composition for protecting a semiconductor junction for forming a glass layer which protects a pn junction, wherein the glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a glass raw material which contains at least ZnO, SiO_(2), B_(2)O_(3), Al_(2)O_(3) and at least two oxides of alkaline earth metals selected from a group consisting of BaO, CaO and MgO and substantially contains none of Pb, As, Sb, Li, Na and K, the glass composition for protecting a semiconductor junction containing no filler. According to the present invention, it is possible to manufacture a semiconductor device having high reliability using a glass material containing no lead. Further, a baking temperature at which a layer made of the glass composition for protecting a semiconductor junction is baked can be set further lower than a baking temperature at which a layer made of a conventional glass material containing lead silicate as a main component is baked so that a semiconductor device having an excellent switching characteristic can be manufactured.


Provided is a glass composition for protecting a semiconductor junction which contains at least SiC_(2), B_(2)O_(3), Al_(2)O_(3), ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein an average linear expansion coefficient within a temperature range of 50 C. to 550 C. falls within a range of 3.3310^(6 )to 4.1310^(6). A semiconductor device having high breakdown strength can be manufactured using such a glass material containing no lead in the same manner as a conventional case where a glass material containing lead silicate as a main component is used.


Patent
Shindengen Electric Manufacturing | Date: 2016-10-12

A lead frame includes one metal plate 10 having a terminal 15, and the other metal plate 50 joined to the one metal plate 10, on which a mounted component 91 is placed. The one metal plate 10 includes a first connection portion 11 connected to the terminal 15, a first extension portion 12 disposed on one end of the first connection portion 11, and a second extension portion 13 disposed on the other end of the first connection portion 11. The other metal plate 50 includes a pair of first clamping portions 62 configured to clamp the first extension portion 12, and a pair of second clamping portions 63 configured to clamp the second extension portion 13. Each of the pair of first clamping portions 62 is pressed to be extended by a mold, which is used for sealing the mounted component with a resin, so that gaps G between the first extension portion 12 and the clamping portions 62 are filled. Each portion of the pair of second clamping portions 63 is pressed to be extended by the mold, so that gaps G between the second extension portion 13 and the second clamping portions 63 are filled.


Patent
Shindengen Electric Manufacturing and Honda Corporation | Date: 2016-03-23

An LED lamp lighting device is connected between a first power supply terminal on a low potential side of a lamp driving power supply and a second power supply terminal on a high potential side of the lamp driving power supply, receives a driving current from the lamp driving power supply, and causes the driving current to illuminate a plurality of LED lamps connected in series.

Loading Shindengen Electric Manufacturing collaborators
Loading Shindengen Electric Manufacturing collaborators