Shindengen Electric Manufacturing

Saitama, Japan

Shindengen Electric Manufacturing

Saitama, Japan
SEARCH FILTERS
Time filter
Source Type

Patent
Shindengen Electric Manufacturing | Date: 2017-05-17

Provided is a semiconductor device 100 of the present invention which includes an element portion 170 and a gate pad portion 180 on the same wide gap semiconductor substrate 110. The element portion 170 includes a first trench structure 146 having a plurality of first protective trenches 142 and first buried layers 144 formed deeper than gate trenches 118. The gate pad portion 180 includes a second trench structure 156 having a plurality of second protective trenches 152 and second buried layers 154. The second trench structure 156 is either one of a structure where the second trench structure includes: a p-type second semiconductor region 158 and a second buried layer made of a conductor or a structure where the second trench structure includes a second buried layer formed of a metal layer which forms a Schottky contact. The second buried layer 154 is electrically connected with the source electrode layer 128. According to the semiconductor device 100 of the present invention, it is possible to provide a semiconductor device which has a high breakdown strength, hardly generates irregularities in electric properties, can perform high speed switching, and has a gate pad portion which is hardly broken down.


Patent
Shindengen Electric Manufacturing | Date: 2017-09-06

A heat sink according to one embodiment of the present invention includes: a base portion having a first surface and a second surface which oppose each other; at least one heat dissipating fin extending vertically from the first surface, each of the at least one heat dissipating fin having an insertion groove extending from an end portion thereof toward the base portion, and a first fin portion and a second fin portion which are separated by the insertion groove; and a connector included in the base portion, the connector being above the insertion groove in plan view, and the connector being configured to electrically connect a first heat generating component to be inserted into the insertion groove from a side of the first surface and a second heat generating component to be disposed on a side of the second surface.


A silicon carbide semiconductor device includes a silicon carbide layer 32 of a first conductivity type, a silicon carbide layer 36 of a second conductivity type, a gate trench 20, a gate electrode 79 provided in the gate trench 20, and a protection trench 10 formed to a depth greater than the gate trench 20. A region in the horizontal direction that includes both the gate trench 20 and a protection trench 10 that surrounds the gate trench 20 with at least a part of the gate trench 20 left unenclosed is a cell region, and a region in the horizontal direction that includes a protection trench 10 and in which a gate pad 89 or a lead electrode connected to the gate pad is disposed is a gate region. The protection trench 10 included in the cell region has a plurality of cell-region linear trench sections 11 that extend straight in the horizontal direction. The horizontal distance D_(1) between the cell-region linear trench sections 11 is greater than the maximum horizontal distance D_(3) between sections of the protection trench 10 included in the gate region.


Patent
Shindengen Electric Manufacturing | Date: 2017-08-09

In a semiconductor package, surfaces of a die pad, a semiconductor element, a connecting member, and a lead are subjected to a surface treatment with a silane coupling agent. A first surface of a plurality of surfaces of the semiconductor device includes a first region where an organic substance is exposed, and a second region where an inorganic substance is exposed, the first surface being bonded with the connecting member. A bonding strength between the first region and the sealing resin is weaker than a bonding strength between the second region and the sealing resin.


A silicon carbide semiconductor device includes a silicon carbide layer 32 of a first conductivity type, a silicon carbide layer 36 of a second conductivity type, a gate trench 20, a gate electrode 79 provided in the gate trench 20, and a protection trench 10 formed to a greater depth than the gate trench 20. A region in the horizontal direction that includes both the gate trench 20 and a protection trench 10 that surrounds only a part of the gate trench 20 in the horizontal direction is a cell region, and a region in the horizontal direction that includes a protection trench 10 and in which a gate pad 89 or a lead electrode connected to the gate pad 89 is disposed is a gate region. A second conductive member 81 is provided above the gate trench 20 in the cell region and in the gate region, and the second conductive member 81 is disposed to extend from above the gate trench 20 in the cell region to the gate region through above a part of the cell region in which the protection trench 10 is not provided.


Patent
Shindengen Electric Manufacturing | Date: 2017-04-05

Provided is a power conversion device that can suppress a surge to be generated when a load, such as a battery, is disconnected from an output of an AC generator. A rectifier circuit connected between an output portion of the AC generator and a first load rectifies the output of the AC generator and supplies the rectified output to the first load. A switch circuit connected between the output portion of the AC generator and the second load rectifies the output of the AC generator and supplies the rectified output to the second load, on condition that a drive signal is in a first signal state indicating permission of a power supply from the AC generator to the second load. Additionally, the switch circuit transitions from a conductive state to a non-conductive state in response to the output of the AC generator, on condition that the drive signal is in a second signal state indicating prohibition of the power supply from the AC generator to the second load. A driver circuit generates the drive signal and supplies the generated drive signal to a control terminal of the switch circuit.


Patent
Shindengen Electric Manufacturing | Date: 2017-08-23

A first circuit board having thermal conductivity; a second circuit board having thermal conductivity and disposed opposing the first circuit board; a first semiconductor element joined to an opposing surface of the first circuit board opposing the second circuit board; a second semiconductor element joined to an opposing surface of the second circuit board opposing the first circuit board; and a connector electrically connecting the first semiconductor element and the second semiconductor element. The connector includes a portion which is sandwiched between the first semiconductor element and the second circuit board without through the second semiconductor element, and which is in contact with the first semiconductor element and the second circuit board.


Patent
Shindengen Electric Manufacturing | Date: 2017-08-23

A method of manufacturing a resin sealing module, which includes an injection step of injecting an uncured curable liquid resin into a module case and a positioning step of positioning the mold member, is provided. In the injection step, a substrate with electronic components is immersed into the curable liquid resin. In the positioning step, the mold member is positioned so that inside space of the first partition wall faces a second region. In the positioning step, at least a protruding end potion of the first partition wall is immersed into the curable liquid resin while a gas layer is held in the inside space. Thereby, a partial region of an upper surface of the curable liquid resin is depressed by the gas layer, so that this region is positioned lower in level than other regions.


Patent
Shindengen Electric Manufacturing | Date: 2017-04-26

A wide gap semiconductor device comprises a first conductive-type semiconductor layer (32); a second conductive-type region (41), (42) that is provided on the first conductive-type semiconductor layer (32); a first electrode (1), of which a part is disposed on the second conductive-type region (41), (42) and the other part is disposed on the first conductive-type semiconductor layer (32); an insulating layer (51), (52), (53) that is provided adjacent to the first electrode (10) on the first conductive-type semiconductor layer (32) and that extends to an end part of the wide gap semiconductor device; and a second electrode (20) that is provided between the first electrode (10) and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer (32).


Patent
Shindengen Electric Manufacturing | Date: 2017-05-03

A semiconductor module (100) has a first insulating substrate (11) ; a first conductor layer (12) provided on a mounting surface of the first insulating substrate (11); a first electronic element (13) provided on the first conductor layer (12) ; a sealing resin (80), which covers an overall mounting region within the mounting surface of the first insulating substrate (11), the first conductor layer (12), and the first electronic element (13) ; and a frame body (70), which is made of metal and covers the overall sealing resin (80).

Loading Shindengen Electric Manufacturing collaborators
Loading Shindengen Electric Manufacturing collaborators