Entity

Time filter

Source Type


Dong L.,University of Science and Technology of China | Dong G.-X.,University of Science and Technology of China | Liu Q.-X.,University of Science and Technology of China | Zhang X.,University of Science and Technology of China | Li S.-J.,Shenzhen Haimingrun Industrial Co.
Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment | Year: 2015

Diamond/copper composite with different diamond particle size were prepared by ultrahigh pressure infiltration technology. The effects of sintering temperature, pressure and sintering time on interface status and thermal conductivity of the materials were investigated. The phase composition and morphology of diamond/copper composite were analyzed by XRD and SEM. The results show that the relative density of the composite materials increases with sintering temperature, pressure and diamond particle size increasing, thermal conductivity of diamond/copper composite coated with alloys is higher than that of coated with Cu. The highest thermal conductivity of diamond/copper composite with 200 μm diamond particle size sintered at 1300℃ for 5 min at 5 GPa can be achieved 870 W/(m·K). © 2015, Editorial Office of Transactions of Materials and Heat Treatment. All right reserved. Source


Chen H.,University of Science and Technology Beijing | Jia C.,University of Science and Technology Beijing | Li S.,Shenzhen Haimingrun Industrial Co.
Journal of Materials Science | Year: 2012

With the aim of obtaining materials with high-thermal conductivities (TCs) for heat sink applications, diamond/Cu composites were produced via two different high-pressure-high-temperature (HPHT) techniques: powder metallurgy method (HPHT-PM) and infiltration method (HPHT-IM). The interfacial characteristics of composite materials are compared with respect to the sintering process and their effect on thermal properties is addressed. The HPHT-IM process is clearly more favorable than that of HPHT-PM and the obtained composites exhibited TCs as high as 717 W/mK for the former, but also as low as 200 W/mK for the latter. The advanced thermal property of HPHT-IM composites is attributed to a well-bonded interface layer with gradual and continuous element transition probably due to amorphous carbon detected by Raman spectra. EDS analysis indicate selective interfacial bonding between diamond {100} faces and Cu. Diamond skeleton with connected particles have been observed in this case, also resulting in enhanced interfacial bonding and thermal properties. The HPHT-PM composites with isolated diamond particles feature visible macro interfacial debonding, leading to rather low TC less than that of pure Cu. © 2011 Springer Science+Business Media, LLC. Source


Wu L.,University of Science and Technology Beijing | Xu G.,University of Science and Technology Beijing | Jia C.,University of Science and Technology Beijing | Chen H.,Shenzhen Haimingrun Industrial Co. | And 2 more authors.
Fenmo Yejin Jishu/Powder Metallurgy Technology | Year: 2014

Diamond/SiC/Cu composites were prepared by ultrahigh pressure (5.5 GPa) infiltration technique. Through the study of thermal conductivity and interface properties with different SiC doping amount, the isolated interface model was proposed. The model conditions, main content and quantitative equations of the theory were discussed in this paper. Based on this model, the necessity of low SiC doping amount and the importance of the Diamond bonding skeleton were well illustrated. The result shows that the optimal SiC doping amount is 15%, with TC 526.7 W·m-1·K-1, CTE 2.4 ppm/K, density 3.74 g·cm-3 and reducing the material cost nearly 15%. Source


Chen H.,University of Science and Technology Beijing | Jia C.-C.,University of Science and Technology Beijing | Li S.-J.,Shenzhen Haimingrun Industrial Co. | Jia X.,University of Science and Technology Beijing | Yang X.,University of Science and Technology Beijing
International Journal of Minerals, Metallurgy and Materials | Year: 2012

Cu-based and Cu-alloy-based diamond composites were made by high-pressure-high-temperature (HPHT) sintering with the aim of maximizing the thermal conductivity of the composites. Improvements in interfacial bonding strength and thermo-physical properties of the composites were achieved using an atomized copper alloy with minor additions of Co, Cr, B, and Ti. The thermal conductivity (TC) obtained exhibited as high as 688 W?m-1?K-1, but also as low as 325 W?m-1?K-1. A large variation in TC can be rationalized by the discrepancy of diamond-matrix interfacial bonding. It was found from fractography that preferential bonding between diamond and the Cu-alloy matrix occurred only on the diamond {100} faces. EDS analysis and Raman spectra suggested that selective interfacial bonding may be attributed to amorphous carbon increasing the wettability between diamond and the Cu-alloy matrix. Amorphous carbon was found to significantly affect the TC of the composite by interface modification. © University of Science and Technology Beijing and Springer-Verlag Berlin Heidelberg 2012. Source


Patent
Shenzhen Haimingrun Industrial Company | Date: 2012-03-02

A surface-modified polycrystalline diamond and a processing method thereof are provided in the present disclosure. The polycrystalline diamond comprises a polycrystalline diamond body, holes are formed on the polycrystalline diamond body after a catalyst metal is removed, and the holes are embedded with a non-catalyst metal after the catalyst metal is removed therefrom. Thus, thermal damage and stress damage to the polycrystalline diamond during operations at a high temperature are eliminated, improving the thermal conductivity of the surface of the polycrystalline diamond, reducing the temperature of the area around the operating point of the polycrystalline diamond and, therefore, the service life of the polycrystalline diamond is prolonged.

Discover hidden collaborations