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Liu J.,Shanghai University | Liu J.,Shanxi LuAn Photovoltaics Technology Co. | Luo J.,Shanghai University | Yang W.,Shanghai University | And 8 more authors.
Journal of Materials Science and Technology | Year: 2015

Single-crystalline anatase TiO2 nanorods have been prepared by solvothermal method using tetrabutylammonium hydroxide (TBAH) as a morphology controlling agent. The obtained TiO2 nanorods are dominated by a large percentage of {010} facets. The power conversion efficiency of dye-sensitized solar cell (DSSC) based on anatase TiO2 nanorods (8.66%) exhibits a significant improvement (35%) compared to that of P25 TiO2 (5.66%). The high performance of the anatase TiO2 nanorods solar cell is ascribed to their large percent of exposed {010} facets as well as balancing their surface areas and sizes. © 2014.

Liu J.,Shanghai University | Liu J.,Shanxi LuAn Photovoltaics Technology Co. | Wang Y.-L.,University of Shanghai for Science and Technology | Yang W.-G.,Shanghai University | Shi W.-M.,Shanghai University
Gongneng Cailiao/Journal of Functional Materials | Year: 2014

By using the method of hydrothermal method and annealing combination, uniform nano-TiO2 arrays and arrays of porous TiO2 nano-flakes were prepared for the first time on Ti substrate, and the entire preparation process mechanism was discussed. ©, 2014, Journal of Functional Materials. All right reserved.

Li Y.-Z.,Shanxi Luan Photovoltaics Technology Co. | Zhou S.-S.,Shanxi Luan Photovoltaics Technology Co. | Liu D.-L.,Shanxi Luan Photovoltaics Technology Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2012

This paper discussed the texturing treatment of polycrystalline silicon wafers. By comparing texturing polycrystalline silicon wafers with alkaline solutions and acid solutions, acid texture could reduce reflectivity better. The electrical characteristics of the solar cell were analyzed by SEM and Solar Simulators Measuring Systems. The results show that polycrystalline silicon wafers with different textured surface has different electrical parameters, and the optimal etch depth was summarized.

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