Shanghai Silicon Intellectual Property Exchange

Shanghai, China

Shanghai Silicon Intellectual Property Exchange

Shanghai, China

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Bulu X.,Shanghai Silicon Intellectual Property Exchange | Bowen S.,Shanghai Silicon Intellectual Property Exchange | Xia L.,Shanghai Silicon Intellectual Property Exchange | Wei Y.,Shanghai Silicon Intellectual Property Exchange | Yun L.,Shanghai Silicon Intellectual Property Exchange
Journal of Semiconductors | Year: 2010

Based on a low supply voltage curvature-compensated bandgap reference and central symmetry Q 2 random walk NMOS current source layout routing method, a 1.2-V 10-bit 100-MSPS CMOS current-steering digital-to-analog converter is implemented in a SMIC 0.13-μm CMOS process. The total consumption is only 10 mW from a single 1.2-V power supply, and the integral and differential nonlinearity are measured to be less than 1 LSB and 0.5 LSB, respectively. When the output signal frequency is 1-5 MHz at 100-MSPS sampling rate, the SFDR is measured to be 70 dB. The die area is about 0.2 mm 2. © 2010 Chinese Institute of Electronics.

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