Shanghai Research and Development Center

Shanghai, China

Shanghai Research and Development Center

Shanghai, China

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Yang X.C.,CAS Shanghai Institute of Microsystem and Information Technology | Wang H.M.,CAS Shanghai Institute of Microsystem and Information Technology | Wu T.R.,CAS Shanghai Institute of Microsystem and Information Technology | Huang F.Q.,CAS Hefei Key Laboratory of Materials for Energy Conversion | And 5 more authors.
Applied Physics Letters | Year: 2013

Magnetotransport measurements were performed on a cross-junction made from polycrystalline graphene grown at a low temperature. The Shubnikov-de Haas oscillation is observed, from which the cyclotron mass mc can be derived varying from 0.043 to 0.055 times that of free electron. The changing rate of electron temperature is found much lower than that in pristine graphene via the universal electron heating study. Investigations on the characteristic lengths of weak localization reveal that the atomically sharp defects dominate the elastic scattering process, while studies on the coherent rate report that the Nyquist effect governs the inelastic scattering process with a little modulation from the direct Coulomb interaction. The scattering lengths in the polycrystalline graphene are comparable to that of exfoliated graphene on SiO2. These findings indicate that some key scattering parameters which characterize the excellent properties of intrinsic graphene are preserved in the polycrystalline graphene, which may find potential applications in interconnects of integrated circuit. © 2013 AIP Publishing LLC.


Li X.,East China Normal University | Ren Z.,East China Normal University | Wang M.,East China Normal University | Zhou H.,East China Normal University | And 3 more authors.
Applied Mechanics and Materials | Year: 2012

A new compact and scalable psp model for the layout proximity effect of poly gate in 40nm CMOSFET is proposed. This model takes into account the impact of gate space and neighboring gates number on mobility and flatband voltage. With the silicon verification, saturation current change up to 5%-7% and flatband voltage change up to 6-8mv is modeled in the constructed model. Vthlin, Idlin and Gmmax are also monitored. These good results show the importance of the new model for circuit design in advanced CMOS node. © (2012) Trans Tech Publications, Switzerland.


Li X.,East China Normal University | Ren Z.,Shanghai Research and Development Center | Shi Y.,East China Normal University
Journal of Digital Information Management | Year: 2012

Inductor with gradual changed metal width and space by good design can get better Q factor than the inductor with fixed metal width and space. In this paper, a simple wide-band inductor model is presented considering both the increase of resistance and the decrease of inductance due to the skin and proximity effects. This model has been verified with simulation and the experimental results of spiral inductors with various geometrical configurations on high-resistivity silicon substrate. Good agreements have been achieved under the selfresonance frequency, which indicates its accuracy. This model has also been proved to be suitable for both the conventional inductor with fixed structure and the inductor with gradual changed structure.

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