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Liang M.,Shanghai R and nter
Current Pharmaceutical Biotechnology | Year: 2012

The oncolytic virus, being a promising new therapeutic strategy for cancer, has inspired a wave of recent clinical research and development in China. The first commercialized oncolytic virus, Oncorine, was approved by Chinese SFDA in November 2005 for nasopharyngeal carcinoma combined with chemotherapy. Since then, a number of oncolytic viruses have been moved into clinical trials. Among these are the armed oncolytic adenoviruses such as H103 (expressing the heat shock protein) currently has finished phase I trial, and KH901 (expressing GM-CSF) now launched in phase II trial In this review, we will discuss the current status of ongoing oncolytic virus projects being conducted at various clinical stages in China, including the preliminary market response for Oncorine after it was launched into the Chinese market in 2006. © 2012 Bentham Science Publishers.


Kang X.,Shanghai R and nter | Zuo Q.,Shanghai R and nter | Yuan C.,Shanghai R and nter | Chen S.,Shanghai R and nter | Zhao Y.,Shanghai R and nter
2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012 | Year: 2012

TaN\Ta is the excellent material against copper diffusion, and is widely used as Cu diffusion barrier in CMOS Cu-BEOL process, with compressive stress around 2GPa. In this work, TaN thin film was used as electrode material in micro-bridge structure based on its electrical and optical property for post-interconnect CMOS-MEMS single chip integration application. The micro-bridge structure forms a resonant cavity which is most critical structure to this application. There are only several layers of thin film on the micro-bridge, and the electrode layer play the most important role to determine the performance of the bridge. Additionally sheet resistance of TaN electrode should be controlled to around 377ohm/SQ, which is the optimum value for light absorption in cavity structure but much higher than TaN baseline film used in CMOS Cu BEOL. DOE experiments were designed, and gas ratio/power was tuned to get the low stress and high resistivity TaN film. According to the experimental results, sheet resistance of TaN film can reach 362 ohm/SQ with thickness of 500A and compressive stress of 475MPa, and the standard deviation of 3.53% can be achieved for the process uniformity. But the process was almost touching the lower power limit of the PVD tool with smaller process windows, and cannot meet the tool and mass-production requirements. Finally TaN film with thickness of 200A and compressive stress of about 900MPa was chosen as best condition with enough process windows, and from the electrical and physical data, the optimized TaN film process can well match this application. © 2012 IEEE.


Kang X.,Shanghai R and nter
Proceedings of International Conference on ASIC | Year: 2011

In this work, CMOS compatible MEMs platform process was developed on 200mm Cu BEOL Line. The fabrication technology was dedicated to micro-bridge structure based MEMs application. The integration scheme was post interconnect single chip integration, in which MEMs was built directly on standard CMOS interconnect structure and can share Si area with standard CMOS circuit. Because of the shared Si area and single chip integration scheme, the application cost can be greatly reduced with increasing performance. Modified CMOS-BEOL process was used to develop the CMOS-MEMs interface structure, and top metal was used both as the functional layer and PAD layer with lower step height by optimized planarization process. As to the bridge structure, TaN was used as electrode material, and alpha-Si film was used as the sacrificial material fabricated by low Temperature PECVD technology. No metal or dielectric material plug was used for the anchor supporting structure, which make the process much more controllable and flexible. For one of the Sensor product application, the sensing material was using B-doped alpha-Si film fabricated by PECVD and in situ doping process. To obtain good contact between TaN electrode and sensing material, reactive preclean was chosen instead of low-power Ar-preclean in order to control the sensing material loss. TaN was etched by standard Cu BEOL tool using CF4/CHF3 gas. The sensing material loss can be well controlled to less than 30nm, and the uniformity of sensing resistor was about 2sigma/mean < 3% for 200A TaN. The TCR of the sensing resistor was about -1.5% ∼ -2% which is compatible to the as-deposited sensing material film, and can well match this sensor application. © 2011 IEEE.


Ren Z.,Shanghai R and nter | Zhang L.,East China Normal University | Hu S.,Shanghai R and nter | Wei Z.,Shanghai R and nter | Shi Y.,East China Normal University
Advanced Materials Research | Year: 2012

A novel Nano-scale scalable multi-finger RF MOSFET model extraction method is presented in this paper. First, Parasitic resistances induced by measuring probe are analyzed, according to which the extraction method of parasitic probe resistor are proposed. Secondly, it is proived that stress effects on the MOS channel scale with finger number. Moreover, Based on experiment data, it is concluded that several MOS instances, finger numbers, channel width and length highly affect the parasitic source and drain resistance of Multi-finger MOS. An empirical scalable model on them has been suggested. A complete flow of model parameters extraction and optimization on nano-scale multi-finger MOSFET is presented. © (2012) Trans Tech Publications, Switzerland.


Kang X.,Shanghai R and nter | Zuo Q.,Shanghai R and nter | Yuan C.,Shanghai R and nter | Chen S.,Shanghai R and nter | Zhao Y.,Shanghai R and nter
Journal of Circuits, Systems and Computers | Year: 2013

TaN\Ta is the excellent material against copper diffusion, and is widely used as Cu diffusion barrier in Complementary Metal-Oxide-Semiconductor (CMOS) Back End of Line (Cu-BEOL) process. Due to its good electrical and thermal property, TaN is also evaluated as electrode material for Micro-Electro- Mechanical Systems (MEMS)/sensor application. In this work, CMOS compatible MEMS based bolometer process with post-interconnect CMOS-MEMS single chip integration scheme was developed on 200 mm standard CMOS Cu BEOL, and TaN thin film was used as key electrode material in micro-bridge structure. The micro-bridge structure, with sensing resistor on surface of the micro-bridge, forms a resonant cavity for IR absorption. There are only several layers of thin film on the micro-bridge, and stress of the electrode layer play very important role to determine the performance of the micro-bridge. Additionally sheet resistance of TaN electrode should be controlled at around 377 Ohm/SQ to match the free space impedance, which is much higher than CMOS baseline process. Low stress and high resistivity TaN film was developed with thickness of 200 Å and compressive stress of about 900 MPa as best condition. From the electrical and physical data, the optimized TaN film process can well match this application. © 2013 World Scientific Publishing Company.


Feng J.,Shanghai JiaoTong University | Kang X.,Shanghai R and nter | Zuo Q.,Shanghai R and nter | Yuan C.,Shanghai R and nter | And 5 more authors.
Sensors (Switzerland) | Year: 2016

In this study, a CMOS compatible capacitive humidity sensor structure was designed and fabricated on a200 mm CMOS BEOL Line. A top Al interconnect layer was used as an electrode with a comb/serpent structure, and graphene oxide (GO) was used as sensing material. XRD analysis was done which shows that GO sensing material has a strong and sharp (002) peak at about 10.278°, whereas graphite has (002) peak at about26°. Device level CV and IV curves were measured in mini-environments at different relative humidity (RH) level, and saturated salt solutions were used to build these mini-environments. To evaluate the potential value of GO material in humidity sensor applications, a prototype humidity sensor was designed and fabricated by integrating the sensor with a dedicated readout ASIC and display/calibration module. Measurements in different mini-environments show that the GO-based humidity sensor has higher sensitivity, faster recovery time and good linearity performance. Compared with a standard humidity sensor, the measured RH data of our prototype humidity sensor can match well that of the standard product. © 2016 by the authors; licensee MDPI, Basel, Switzerland.


Kang X.,Shanghai R and nter
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

TaN was widely used as Cu diffusion barrier in CMOS Cu-BEOL technology, in which it was removed by CMP process. Some work was done on TaN etch by Br/Cl-based gas for metal gate application. But seldom work was done for TaN etch in CF-based gas. In this work TaN etching in CF4/CHF3 gas was investigated on CVD alpha-Si substrate for CMOS compatible MEMS/Sensor application. To avoid resist poisoning problem of metal nitrides, a thin layer of SiON and oxide was deposited on TaN. The patterning sequence included 248nm lithography, etching thin SiON and oxide, followed by TaN etching. It was found serious residue problem on the unpatterned area. After EDX check, Ta was found in the residue. Assumption was made for the mechanism of residue formation. Based on this model, the process was optimized and a 4-step etching process was developed. The main feature of this process is TaN etching in CF4/CHF3 gas with low power and pressure including a post-etching de-fencing process to solve the residue problem. The optimized process can well control the TaN etching profile and Si loss during TaN over-etch, and was successfully used in the MEMS/Sensor patterning process. ©2010 IEEE.


Hu Z.-J.,Shanghai R and nter | Chen S.-M.,Shanghai R and nter
ECS Transactions | Year: 2010

Conventional silicon oxynitride SiON, superior to SiN due to its lower stress and better impervious barrier properties to SiO 2, has found only limited application as the passivation layer for non-volatile memory due to its opacity to ultraviolet (UV) light. To tackle this issue, a UV-transparent silicon oxynitride process is developed. A full factorial design of experiment (DOE) is used to study the UV-transmittance of the film from the process parameters. In addition, FT-IR is performed to characterize the Si-O-N bonds, pin-hole test for the film integrity, and varying UV erase time for the corresponding device performance. ©The Electrochemical Society.

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