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Shi L.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Shi L.,University of Chinese Academy of Sciences | Huang X.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Gu M.,CAS Hefei Key Laboratory of Materials for Energy Conversion | And 2 more authors.
Surface and Coatings Technology | Year: 2016

Ni/Ti/SKD/Ni (SKD: skutterudite) thermoelements were fabricated by spark plasma sintering and electroplating procedures. The interfacial stability was evaluated by long-term isothermal aging and multi-round thermal shock tests. The interfacial diffusion at Ni/SKD and Ni/Ti in the thermoelements during high temperature aging up to 15days was systematically studied by scanning electron microscopy with elemental distribution. The growth kinetics of the intermetallic compounds was analyzed, and the coefficients of the intermetallic compound growth rate were calculated. For the Ni/SKD interface, there was no inter-diffusion at temperatures below 200°C. However, three intermetallic compound layers for the Ti/Ni interface were confirmed to be TiNi3, TiNi and Ti2Ni sequentially from the Ni side to the Ti side at temperatures above 500°C, leading to an interfacial structure of Ti/Ti2Ni/TiNi/TiNi3/Ni. All interfaces maintained good bonding strength after long-term isothermal aging and multi-round thermal shock tests. The experimental data demonstrated that Ni is an ideal candidate as the electrode of skutterudite thermoelements at both the hot and cold sides. © 2015 Elsevier B.V. Source


Qu S.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Yao Q.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Shi W.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Wang L.,CAS Hefei Key Laboratory of Materials for Energy Conversion | And 2 more authors.
Journal of Electronic Materials | Year: 2015

Poly(3-hexylthiophene) (P3HT) films were prepared by using raw P3HT powders with different molecular configurations through solution processing and doped with ferric salt of triflimide anions [Fe(TFSI)3], and their thermoelectric (TE) properties were studied. It was found that P3HT with highly regular molecular configuration formed highly ordered chain arrangements in P3HT film (denoted rr-P3HT film), while P3HT with irregular molecular configuration formed random chain arrangements in P3HT film (denoted ra-P3HT film). The ordered chain arrangement in rr-P3HT not only improved the charge carrier mobility but also contributed to produce more carriers, thereby remarkably improving the electrical conductivity. The electrical conductivity of rr-P3HT film was up to 96.1 S/cm, more than two orders of magnitude higher than that of ra-P3HT film. Consequently, the power factor of rr-P3HT film reached 17.10 μW/(m K2), about one order of magnitude higher than that of ra-P3HT film and among the best values for pure P3HT TE materials. This study suggests that P3HT with highly regular configuration contributes to form highly ordered molecular chain arrangements, resulting in improved TE properties. © 2015 The Minerals, Metals & Materials Society Source


Wang L.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Wang L.,University of Chinese Academy of Sciences | Yao Q.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Bi H.,CAS Hefei Key Laboratory of Materials for Energy Conversion | And 4 more authors.
Journal of Materials Chemistry A | Year: 2015

Polyaniline (PANI)/graphene (GP) thermoelectric (TE) composite films were prepared by a combination of in situ polymerization and a solution process. It was found that there existed a large number of graphene-polyaniline nano-interfaces in the composite films with graphene nanoplates aligned in the PANI matrix in the direction parallel to the substrate. SEM, TEM, Raman, XPS and UV-Vis analyses indicated that polyaniline coated on the surface of graphene by the strong π-π conjugation interactions during in situ polymerization, and then the PANI molecular chains were expanded by the chemical interactions between polyaniline and solution. Both the in situ polymerization process and solution process contributed to the uniform dispersion of graphene in the PANI matrix, which not only increased the number of graphene-polyaniline nano-interfaces in the composite, but also strengthened the π-π conjugation interactions between graphene and polyaniline, resulting in more ordered regions forming in the composite films. Consequently, the Seebeck coefficient of the composite films was remarkably improved and higher than the values calculated based on the series-connected two-component mixture model. The optimal electrical conductivity and Seebeck coefficient of the composite with 48 wt% graphene reached 814 S cm-1 and 26 μV K-1, respectively, resulting in a maximum power factor of 55 μW m-1 K-2, which is the highest value among the reported polymer/graphene composite TE materials. This journal is © The Royal Society of Chemistry 2015. Source


Qiu P.F.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Qiu P.F.,CAS Shanghai Institute of Ceramics | Wang X.B.,CAS Hefei Key Laboratory of Materials for Energy Conversion | Wang X.B.,CAS Shanghai Institute of Ceramics | And 7 more authors.
Journal of Materials Chemistry A | Year: 2015

The ternary selenide CuAgSe shows great potential as a new promising thermoelectric material due to its superior carrier mobility and low lattice thermal conductivity. In this study, we doped Te at Se-sites and systematically studied the effect of Te-doping on the thermoelectric properties of the low-temperature CuAgSe phase (β-CuAgSe). It is found that the Te doping limit in β-CuAgSe is around 0.15. The longitudinal resistivity and Hall resistivity measurements under a magnetic field suggest that Te-doping exerts little effect on the band structure and the low-mobility carriers (holes) contribute weakly to the electrical transport in all Te-doped samples. Thus, the p-n transition and accompanying abrupt Seebeck coefficient decrease at elevated temperatures, which are quite common in non-stoichiometric β-CuAgSe samples, were not observed in Te-doped samples. Although the electrical conductivity of Te-doped samples is reduced due to the decreased carrier concentration and mobility, the significantly decreased thermal conductivity ensures that the Te-doped samples still maintain a similar or slightly higher thermoelectric figure of merit (zT) as compared with that of the stoichiometric β-CuAgSe. The maximum zT around 0.7 at 450 K is obtained in CuAgSe0.95Te0.05. © The Royal Society of Chemistry. Source


Zhang Q.H.,CAS Shanghai Institute of Ceramics | Zhang Q.H.,University of Chinese Academy of Sciences | Huang X.Y.,CAS Shanghai Institute of Ceramics | Bai S.Q.,CAS Shanghai Institute of Ceramics | And 4 more authors.
Advanced Engineering Materials | Year: 2016

Thermoelectric (TE) devices for power generation have been attracting increasing attention on account of their advantages such as solid-state operation, good stability, and high reliability. This paper presents an overview of the design principle, fabrication methods and testing technology of TE power generation devices. Particular attention is paid to skutterudite-based devices regarding electrode fabrication, barrier layer design, interface optimization, protective coating, and evaluation of elements and modules. The development of Bi2Te3-based devices for power generation focusing specifically on the optimization of Bi2Te3/electrode joints and fabrication and evaluation of Bi2Te3-based modules is summarized. The future challenges concerning TE devices for power generation are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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