Shanghai Huali Microelectronics Corporation | Date: 2013-11-01
The present invention relates to the manufacture of CMOS semiconductor device. This invention includes: Step S
Shanghai Huali Microelectronics Corporation | Date: 2013-10-17
A method of forming a dual gate oxide is disclosed which includes: providing a silicon substrate; depositing a first silicon oxide film over the silicon substrate; coating a photoresist over the first silicon oxide film; exposing and developing the photoresist to expose a portion of the first silicon oxide film; coating a crosslinking agent containing amine compound or polyamine compound on the photoresist and performing a heat curing process, thereby forming a protective layer of crosslinked macromolecules over the photoresist; removing the remaining crosslinking agent; performing a wet etching process to reduce a thickness of, or completely remove, the exposed portion of the first silicon oxide film; removing the photoresist and the protective layer formed thereon; and depositing a second silicon oxide film.
Shanghai Huali Microelectronics Corporation | Date: 2013-11-18
A process of manufacturing the gate oxide layer, which uses the wet oxidation by deuterium to form gate oxide layer, wherein the nitriding treatment is applied to formed gate oxide layer by high temperature annealing process, the stable Si-D bonds is formed on surface of the gate oxide layer to reduce silicon dangling bonds, which reduce the defect of the gate oxide interface and lower the interface defect density of the gate oxide layer and the charge density effectively to avoid NBTI, is provided.
Shanghai Huali Microelectronics Corporation | Date: 2013-12-05
The present invention discloses a method for inhibiting the electric crosstalk of back illuminated CMOS image sensor. This invention comprises, two ion implanting layers are implanted at the different area of the backside of the pixel unit after the thickness of the backside of CMOS image sensor is reduced. The ion concentrations implanted into the two layers are controlled to decrease progressively from top to bottom. An electric field is formed from top to bottom inside the epitaxial layer. The said electric field absorbs the incident light which arrives at the substrate region outside of the space charge of the photodiode. It reduces the electron diffuses in different pixels. Consequently, it reduces the electric crosstalk of pixels, improves the manufacture process and improve the image quality of the of CMOS image sensor.
Shanghai Huali Microelectronics Corporation | Date: 2013-11-15
A plasma cleaning method is disclosed, the method includes the steps of performing a remote plasma cleaning; performing an in-situ radio-frequency nitrogen plasma cleaning; and depositing a seasoning film, wherein a reactant gas introduced in depositing the seasoning film does not include any nitrogen-containing gas. Advantageously, the combined use of the remote plasma cleaning and in-situ RF nitrogen plasma cleaning processes, as well as the non-use of any nitrogen-containing gas during the deposition of the seasoning film, can together greatly improve the conventional wafer backside metal contamination problem.