Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Date: 2014-02-13
A memory array used in the field of semiconductor technology includes a plurality of memory cells, bit lines, word lines perpendicular to the bit lines, and first/second control lines. The memory array uses split-gate memory cells, wherein two memory bit cells of a memory cell share one word line, thereby the read, program and erase of the memory cell can be realized by applying different voltages to the word line, two control gates and source/drain regions; the word line sharing structure enables a split-gate flash memory to effectively reduce the chip area and avoid over-erase problems while maintaining electrical isolation performance of the chip unchanged and not increasing the complexity of the process.
Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Date: 2014-01-03
An RF LDMOS device is disclosed, including: a substrate having a first conductivity type; a channel doped region having the first conductivity type and a drift region having a second conductivity type, each in an upper portion of the substrate, the channel doped region having a first end in lateral contact with a first end of the drift region; a first well having the first conductivity type in the substrate, the first well having a top portion in contact with both of a bottom of the first end of the channel doped region and a bottom of the first end of the drift region; and a second well having the first conductivity type in the substrate, the second well having a top portion in contact with a bottom of a second end of the drift region. A method of forming such an RF LDMOS device is also disclosed.
Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Date: 2014-12-18
A method of forming a micro-electro-mechanical systems (MEMS) device includes: providing a substrate; forming a tantalum nitride (TaN) layer on the substrate; forming a dielectric anti-reflective coating (DARC) layer on the TaN layer; coating photoresist on the DARC layer and etching the DARC: and TaN layers to form a trench; performing intensified ashing and wet cleaning processes to remove the photoresist and the DARC layer. The DARC layer can prevent the formation of tantalum-containing polymeric substances from a reaction between the TaN layer and the photoresist during the intensified ashing process.
Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Date: 2014-01-21
A SOI RF device and a method for forming the same are provided. A trench exposed a part of the high resistivity silicon base is formed in the SOI substrate; a non-doped polysilicon layer is disposed on the high resistivity silicon base which is exposed by the trench; and at least a part of the non-doped polysilicon layer is covered by an above metal layer. With effects of the metal layer which is applied with a RF signal or a superposed signal, and fixed charges in the BOX layer, an inversion layer may be formed at a surface of the non-doped polysilicon layer. Since carriers may easily recombine at the grain boundaries of polysilicon, eddy current generated on a surface of the high resistivity silicon base is reduced, loss of the RF signal is reduced, and linearity of the RF signal device is improved.
Shanghai Huahong Grace Semiconductor Manufacturing Corporation | Date: 2014-12-31
An EEPROM device, a forming method thereof, and a method for implementing an erase operation to the device are provided. The EEPROM device includes: a semiconductor substrate having active regions therein; a word line disposed on a first active region; float gate dielectric layers disposed on second active regions; float gates disposed on the float gate dielectric layers, wherein each of the float gates has a width larger than that of the second active region; control gates disposed on control gate dielectric layers which are disposed on the float gates; an isolation oxide layer disposed between the word line and the float gates along with the control gates; and bit line doping regions disposed on third active regions. Accordingly, an erase operation can be implemented from a bit line, and coupling ratios of a float gate to a control gate and to a bit line doping region can be improved.