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Jin F.,Fudan University | Jin F.,Shanghai HHGrace Semiconductor Manufacture Co. | Xu X.,Fudan University | Xu X.,Shanghai HHGrace Semiconductor Manufacture Co. | And 6 more authors.
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | Year: 2015

An investigation of BV degradation mechanism was presented by studying 700 V LDMOS, which proved to be induced by GIDL (Gate Induced Drain Leakage) stress. Experiment results showed that electric field intensity located at birds-beak of field oxide under the gate is the major reason to cause BV degradation. Based on the understanding of the mechanism, an optimized design of ultra high voltage LDMOS device is proposed and verified. With the newly fabricated chip, it is shown that BV degradation problem has been solved and the device can pass both wafer-level and package-level reliability qualification after optimization. ©, 2015, NUAA Printing House. All right reserved.

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