Shandong Inspur Huaguang Optoelectronics Co.

Weifang, China

Shandong Inspur Huaguang Optoelectronics Co.

Weifang, China
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Xu M.-S.,Shandong University | Xu M.-S.,Shandong Inspur Huaguang Optoelectronics Co. | Hu X.-B.,Shandong University | Xu X.-G.,Shandong University | Xu X.-G.,Shandong Inspur Huaguang Optoelectronics Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2014

The influence of the nucleation layer growth conditions on the crystal quality and residual stress of the GaN film grown on silicon carbide substrate were studied. The AlGaN nucleation layer with high growth temperature can efficiently decrease the dislocation and stress of the GaN film. The (0002) and (10-12) reflection planes of the high resolution X-ray diffraction of the GaN film are 161 arcsec and 244 arcsec. The Raman frequency shift of the GaN film is 567.7 cm-1. The atomic force microscope results of the nucleation layer demonstrate that the crystal quality of the GaN film improves as the decreases of the nucleation island density.


Xu M.,Shandong University | Xu H.,Shandong Inspur Huaguang Optoelectronics Company | Shen Y.,Shandong Inspur Huaguang Optoelectronics Company | Hu X.,Shandong University | Xu X.,Shandong University
IEEE Photonics Technology Letters | Year: 2014

We fabricated GaN-based flip-chip light-emitting diodes (FC-LEDs), which were grown on both conventional and high purity SiC substrates. The influence of beveling, thickness, and absorption of the SiC substrate on the light extraction efficiency (LEE) of the FC-LED was investigated by simulation and experiment. From the simulation results, the LEE of the FC-SLED with a 60° beveling angle is higher than that on a rectangular substrate. The experimental results demonstrate that about 15% enhancement of the LEE was achieved by increasing the thickness of the high purity SiC substrate from 120 to 470 μ. A sample with an X pattern on the top face exhibits the highest light output power. The LEE of the FC-SLED can be efficiently enhanced by suitably beveling the substrate with no degradation of the electrical properties. © 2014 IEEE.


Lin G.,Shandong University | Zuo Z.,Shandong Inspur Huaguang Optoelectronics Co. | Liu D.,Shandong University | Zhang Q.,Shandong University | And 2 more authors.
Physical Chemistry Chemical Physics | Year: 2014

We report here on significant enhancement of the photochemical etching of p-type gallium phosphide (GaP) by Au plasmonic nanostructures. The photochemical etching rate of defect (dislocation) states of Au-coated p-GaP samples is ten times higher than blank samples when irradiated with 532 nm laser. It is confirmed that the enhancement of photochemical etching is wavelength selective. Only 532 nm laser can efficiently increase the photochemical etching rate, while lasers of other wavelengths (375, 405, 445, and 473 nm) show limited or negative effects. This observation can be attributed to defect (dislocation) enhanced photochemical etching through localized surface plasmon resonance of Au nanostructures. This method may open a new pathway for controlled fabrication of novel optoelectronic devices. © the Partner Organisations 2014.


Zhang H.,Shandong University | Xiao L.,Shandong University | Qu S.,Shandong Inspur Huaguang Optoelectronics Co. | Wang C.,Shandong Inspur Huaguang Optoelectronics Co. | And 3 more authors.
2015 12th China International Forum on Solid State Lighting, SSLCHINA 2015 | Year: 2015

A Si-doped GaN films was, grown on 4H-SiC by metal-organic chemical vapor deposition. It was found that the compressively strained layer of the film can be relaxed and surface structural quality can be improved by increasing the thickness of Si-doped GaN film. The critical thickness of beginning of two-dimension growth of GaN on 4H-SiC substrate by metal-organic chemical vapor deposition (MOCVD) has been systematically studied. We optimized growth time of GaN layer so that the GaN layer structral quality can be improved and the root mean square (RMS) roughness of surface can be reduced. With suitable growth time of GaN layer, crack-free 600 nm GaN was obtained and the full-width at half-maximum (FWHM) of (0 0 2) plane rocking curve measured by double crystal X-ray diffraction (DCXRD) was as low as 279.6 arcsec. This kind of film can be used as a high-quality buffer layer between the substrate and epitaxial layer. © 2015 IEEE.


Zhang H.,Shandong University | Qu S.,Shandong Inspur Huaguang Optoelectronics Co. | Wang C.-X.,Shandong Inspur Huaguang Optoelectronics Co. | Hu X.-B.,Shandong University | And 2 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2015

This paper fabricated GaN-based light-emitting diodes, which were grown on c-axis oriented sapphire substrates by MOCVD. The effect of the thickness of the epitaxial layer and the growth rate of n-type layer on the warp, bow and the strain of the epitaxial layer was investigated. Photoluminescence (PL) spectra, FM100 and Raman were used to research the properties of the samples. The results indicated that by the means of reducing the thickness of the epitaxial layer and lowering growth rate of n-type layer, the warp, bow and strain of the epitaxial layer was effectively lowered. In the meantime, the uniformity of the wavelength of epitaxial wafer was further improved. © 2015, Chinese Ceramic Society. All right reserved.


Aminbeidokhti A.,Griffith University | Dimitrijev S.,Griffith University | Han J.,Griffith University | Xu X.,Shandong University | And 6 more authors.
Superlattices and Microstructures | Year: 2015

In this paper, a novel method for extraction of electron mobility in the two-dimensional electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on electron mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs. © 2015 Elsevier Ltd. All rights reserved.


Zhang H.,Shandong University | Qu S.,Shandong Inspur Huaguang Optoelectronics Co. | Wang C.-X.,Shandong Inspur Huaguang Optoelectronics Co. | Hu X.-B.,Shandong University | And 2 more authors.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2015

AlGaN/GaN high electron mobility transistors were fabricated by MOCVD. The effects of growth pressure and carrier gas composition on the surface morphology of AlGaN barrier layer and mobility of the two-dimensional electron gas of AlGaN/GaN high electron mobility transistor were investigated. The quality of epitaxial layer was assessed by AFM, SEM-EDS. The results indicate that the surface morphology of the AlGaN barrier layer at first was improved and then became worse with the increase of the reactor pressure from 50torr to 200torr. The best surface morphology of AlGaN layer was obtained at 100torr. It was also found that the surface morphology of AlGaN layer could be improved by flowing a moderate amount of hydrogen gas during the growth of the barrier layer. The largest mobility of the two-dimensional electron gas we got in AlGaN/GaN HEMT is 1545 cm2/V·s corresponding to barrier layer growth at 100torr and a percentage of 59% hydrogen flow in the total carrier gas in the reactor chamber. © 2015, Chinese Ceramic Society. All right reserved.


Xu M.,Shandong University | Hu X.,Shandong University | Peng Y.,Shandong University | Yang K.,Shandong University | And 5 more authors.
Journal of Alloys and Compounds | Year: 2013

A set of Au/Ti/Ni/Ge metallizations with different thicknesses of the underlying titanium layers have been deposited on the carbide-terminated face of n-type silicon carbide (SiC) to get low ohmic contact resistance. The electrical and microstructural properties of the contacts are studied. It is observed that the conducting behavior of all samples is rectifying after annealing at 800 °C and becomes ohmic after annealing above 850 °C in vacuum atmosphere. Titanium shows smaller contact resistance for the carbon face of n-type SiC than other metal layers. The specific contact resistance is investigated by Transfer Line Method (TLM) measurements. The contact resistivity of sample Au/Ti/SiC exhibits unmonotonous dependence with the thickness of titanium. The best specific contact resistance is 2.02 × 10-5 Ω cm2. High resolution X-ray diffraction analysis results indicate that carbon atoms release from the surface of C-face of SiC and interact with titanium atoms to form titanium carbide (TiC) at the contact surface. © 2012 Elsevier B.V. All rights reserved.


Cao J.,Beijing Solid State Lighting Science and Technology Promotion Center | Lu X.,Beijing Solid State Lighting Science and Technology Promotion Center | Zhao L.,CAS Institute of Semiconductors | Qu S.,Shandong Inspur Huaguang Optoelectronics Co. | Gao W.,Beijing Solid State Lighting Science and Technology Promotion Center
Journal of Semiconductors | Year: 2015

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode. © 2015 Chinese Institute of Electronics.


Xu H.-Y.,Shandong University | Chen X.-F.,Shandong University | Peng Y.,Shandong University | Xu M.-S.,Shandong University | And 6 more authors.
Chinese Physics B | Year: 2015

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the AlGaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with AlN buffer layer. To increase the light extraction efficiency of GaN-based LEDs on SiC substrate, flip-chip structure and thin film flip-chip structure were designed and optimized. The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 mA. At 350 mA, the output power, the Vf, the dominant wavelength, and the wall-plug efficiency of the blue LED were 644 mW, 2.95 V, 460 nm, and 63%, respectively. © 2015 Chinese Physical Society and IOP Publishing Ltd.

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