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Aminbeidokhti A.,Griffith University | Dimitrijev S.,Griffith University | Han J.,Griffith University | Xu X.,Shandong University | And 6 more authors.
Superlattices and Microstructures

In this paper, a novel method for extraction of electron mobility in the two-dimensional electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on electron mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs. © 2015 Elsevier Ltd. All rights reserved. Source

Lin G.,Shandong University | Zuo Z.,Shandong Inspur Huaguang Optoelectronics Co. | Liu D.,Shandong University | Zhang Q.,Shandong University | And 2 more authors.
Physical Chemistry Chemical Physics

We report here on significant enhancement of the photochemical etching of p-type gallium phosphide (GaP) by Au plasmonic nanostructures. The photochemical etching rate of defect (dislocation) states of Au-coated p-GaP samples is ten times higher than blank samples when irradiated with 532 nm laser. It is confirmed that the enhancement of photochemical etching is wavelength selective. Only 532 nm laser can efficiently increase the photochemical etching rate, while lasers of other wavelengths (375, 405, 445, and 473 nm) show limited or negative effects. This observation can be attributed to defect (dislocation) enhanced photochemical etching through localized surface plasmon resonance of Au nanostructures. This method may open a new pathway for controlled fabrication of novel optoelectronic devices. © the Partner Organisations 2014. Source

Cao J.,Beijing Solid State Lighting Science and Technology Promotion Center | Lu X.,Beijing Solid State Lighting Science and Technology Promotion Center | Zhao L.,CAS Institute of Semiconductors | Qu S.,Shandong Inspur Huaguang Optoelectronics Co. | Gao W.,Beijing Solid State Lighting Science and Technology Promotion Center
Journal of Semiconductors

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode. © 2015 Chinese Institute of Electronics. Source

Xu M.,Shandong University | Xu H.,Shandong Inspur Huaguang Optoelectronics Co. | Shen Y.,Shandong Inspur Huaguang Optoelectronics Co. | Hu X.,Shandong University | Xu X.,Shandong University
IEEE Photonics Technology Letters

We fabricated GaN-based flip-chip light-emitting diodes (FC-LEDs), which were grown on both conventional and high purity SiC substrates. The influence of beveling, thickness, and absorption of the SiC substrate on the light extraction efficiency (LEE) of the FC-LED was investigated by simulation and experiment. From the simulation results, the LEE of the FC-SLED with a 60° beveling angle is higher than that on a rectangular substrate. The experimental results demonstrate that about 15% enhancement of the LEE was achieved by increasing the thickness of the high purity SiC substrate from 120 to 470 μ. A sample with an X pattern on the top face exhibits the highest light output power. The LEE of the FC-SLED can be efficiently enhanced by suitably beveling the substrate with no degradation of the electrical properties. © 2014 IEEE. Source

Xu M.-S.,Shandong University | Xu M.-S.,Shandong Inspur Huaguang Optoelectronics Co. | Hu X.-B.,Shandong University | Xu X.-G.,Shandong University | Xu X.-G.,Shandong Inspur Huaguang Optoelectronics Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals

The influence of the nucleation layer growth conditions on the crystal quality and residual stress of the GaN film grown on silicon carbide substrate were studied. The AlGaN nucleation layer with high growth temperature can efficiently decrease the dislocation and stress of the GaN film. The (0002) and (10-12) reflection planes of the high resolution X-ray diffraction of the GaN film are 161 arcsec and 244 arcsec. The Raman frequency shift of the GaN film is 567.7 cm-1. The atomic force microscope results of the nucleation layer demonstrate that the crystal quality of the GaN film improves as the decreases of the nucleation island density. Source

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