Shandong Huaguang Optoelectronics Co.

Jinan, China

Shandong Huaguang Optoelectronics Co.

Jinan, China
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Xia W.,University of Jinan | Xia W.,Shandong Huaguang Optoelectronics Co. | Zhu Z.,Shandong Huaguang Optoelectronics Co. | Li P.,Shandong Huaguang Optoelectronics Co. | And 4 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

Highly uniform solid-phase Zn-diffusion technique was developed to fabricate transparent windows for 650 nm red laser diodes (LDs). The maximum output power was up to 120 mW, which is three times higher than that for LDs without window structure. The LDs showed excellent thermal characteristics and aging reliability with TO-can package. The characteristic temperature was estimated to be 85 K in the temperature range of 25∼65 °C. The LDs showed stable operation of 10 mW at a high temperature of 75 °C. After aging test of 2000 h, the elevated operation current was less than 3%, compared to the initial value. The predicted life time was over 10000 h for 10 mW operation at 75 °C. © 2016 SPIE.

Gong H.,Shandong University | Gong H.,University of Jinan | Hao X.,Shandong University | Wu Y.,Shandong University | And 4 more authors.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | Year: 2011

Photonic crystal (PhC) structure is an efficient tool for light extraction from light-emitting diodes (LEDs). The fabrication of a large area PhC structure on the light output surface of LEDs often involves sophisticated equipments such as nanoimprint lithography machine. In this study a monolayer of polystyrene (PS) microspheres was employed as a template to fabricate a noninvasive photonic crystal of indium tin oxide (ITO) on the surface of GaN-based LED. PS spheres can help to form periodic arrangement of bowl-like holes, a photonic crystal with gradually changed fill factors. Importantly, the electroluminescence intensity of LED with a photonic crystal was significantly enhanced by 1.5 times compared to that of the conventional one under various forward injection currents. © 2011 Elsevier B.V. All rights reserved.

Zhu Z.,Sun Yat Sen University | Zhu Z.,Shandong Huaguang Optoelectronics Co. | Zhang X.,Shandong Huaguang Optoelectronics Co. | Li P.,Shandong Huaguang Optoelectronics Co. | And 3 more authors.
Journal of Semiconductors | Year: 2015

GaInAsP layers and GaAsP/ (Al) GaInP laser diodes (LDs) have been grown on GaAs substrates by metalorganic chemical vapor deposition. The GaInAsP layer, which is lattice matched to GaAs, has an intermediate band gap between Ga0:5In0:5P and GaAs. The GaInP/GaAs heterojunction spikes, especially in the valence band, can be suppressed by introducing this thin GaInAsP layer into the heterostructure interface. The 808 nm GaAsP/ (Al) GaInP LDs with GaInAsP intermediate layer show a reduced operating voltage compared to the conventional LDs with abrupt GaInP/GaAs interface due to the enhanced hole injection. As a result, the power conversion efficiency is improved from 52% to 60% at 350 mW output power. At high current injection, the LD with GaInAsP intermediate layer has higher light power owing to the decreased joule heating. © 2015 Chinese Institute of Electronics.

Yu G.,Shandong University | Yu G.,Shandong Huaguang Optoelectronics Co. | Yang Y.,Shandong University | Yang Y.,Shandong Huaguang Optoelectronics Co. | And 2 more authors.
Zhongguo Jiguang/Chinese Journal of Lasers | Year: 2015

SiC crystals are used for a high refractive index material, as the frequency-selected device of Brewster plate. A stable single-longitudinal-mode green laser with an output power of 120 mW is achieved. Both the theoretical analysis and experimental results show that, compared with the common frequency-selected device using K9 glass as Brewster plate, the new frequency-selected device using the high refractive crystal of SiC as Brewster plate makes it easier to adjust the entire optical system. Moreover, the device works more stably, be much easier to achieve commercialization. © 2015, Science Press. All right reserved.

Gong H.-B.,Shandong University | Hao X.-P.,Shandong University | Xia W.,Shandong University | Xia W.,Shandong Huaguang Optoelectronics Co. | And 3 more authors.
Guangdianzi Jiguang/Journal of Optoelectronics Laser | Year: 2010

After inductively coupled plasma etching using Indium Tin oxide(ITO) particles as mask, we manufactured red-light-emitting diode(LED) that surface roughened and investigated the effect of etching duration to ITO on LED surface morphology. The results showed that under the inject current of 20 mA, the light extraction efficiency of surface roughened LED increased by at least 30% when the diameter of the formed GaP particles was around 200~500 nm and the etching depth is 200~400 nm. In addition, surface roughening did not have any effect on the angular distribution of emitted light.

Shen Y.,Shandong University | Shen Y.,Shandong Huaguang Optoelectronics Co. | Xu H.,Shandong Huaguang Optoelectronics Co. | Xu X.,Shandong University | And 7 more authors.
Materials Science in Semiconductor Processing | Year: 2013

A thin film consisting of a disordered nanorod network of indium tin oxide (ITO) and conventional ITO films are fabricated on gallium nitride (GaN) based-light emitting diodes (LEDs) by electron beam evaporation. The surface morphologies are observed by scanning electron microscopy (SEM). The disordered nanorod network of ITO is grown in vacuum without oxygen. It can be applied directly on the LED as the current spreading film unlike other nanorods which require growth on a conductive layer. The transmittance, current-voltage characteristic, and the dependence of light output power on current are measured for disordered nanorod network ITO LEDs and conventional ITO LEDs, respectively. The measurement results indicate that the nanorod network provides a significant improvement in the light output power of GaN-based LEDs. The influence of the structure of ITO films on the light output power of GaN-based LEDs is discussed. © 2013 Elsevier Ltd. All rights reserved.

Xu H.,Shandong University | Hu X.,Shandong University | Xu X.,Shandong University | Shen Y.,Shandong Huaguang Optoelectronics Co Ltd. | And 3 more authors.
Applied Surface Science | Year: 2012

To investigate the mechanism of the yellow luminescence (YL) in GaN, N-face GaN epitaxial film was prepared by wafer bonding and laser lift off from sapphire substrate. The exposed N-polar surface could be etched with potassium hydroxide aqueous solution. Intriguingly, we observed the yellow-to-band-edge luminescence ratio increased by 3.2 times after KOH etching. Since KOH etching is dislocation selective and changes the surface states of GaN, we associated the outstanding increase of YL to the presence of surface states instead of dislocations. It is further confirmed by X-ray photoelectron spectroscopy studies that the Ga vacancies dominate the YL in GaN. © 2012 Elsevier B.V.

Qu S.,Shandong University | Li S.,Shandong University | Li S.,Shandong Huaguang Optoelectronics Co. | Peng Y.,Shandong University | And 7 more authors.
Journal of Alloys and Compounds | Year: 2010

The influence of AlN buffer growth temperature on the quality and stress of 4.5 μm GaN epilayer on 6H-SiC substrate by organometallic vapor phase epitaxy (MOVPE) has been investigated. The crystalline quality and the atomic surface morphology were improved, the density of the pits and the stress of the GaN epilayer were reduced by increasing the growth temperature of the AlN buffer in the range from 950 °C to 1100 °C. By employing the optimized 1100 °C growth temperature of AlN buffer, very high quality of GaN epilayer was achieved. The X-ray full width of half maximums (FWHMs) of (0 0 2) and (1 0 2) reflection rocking curves of the GaN epilayer have been improved to 159 arcsec and 194 arcsec, respectively, and the surface RMS to only 0.31 nm in the 5 μm × 5 μm atomic force microscopy (AFM) scan. The stress of GaN epilayer was investigated by X-ray diffraction and Raman scattering as well. The degree of the tensile stress in GaN epilayer could be suppressed by increasing the growth temperature of AlN buffer. Finally, a high quality of crack-free 4.5 μm thick GaN epilayer was obtained on 6H-SiC substrate using the optimized 1100 °C AlN growth temperature. © 2010 Elsevier B.V.

Yu G.-L.,Shandong University | Yu G.-L.,Shandong Huaguang Optoelectronics Co. | Hu X.-B.,Shandong University | Xu X.-G.,Shandong University | Xu X.-G.,Shandong Huaguang Optoelectronics Co.
Rengong Jingti Xuebao/Journal of Synthetic Crystals | Year: 2015

A compression method of the fast axis of semiconductor laser by micro lens using optical fiber is introduced. By coating the two symmetrical sides of the fiber with antireflection films, the light reflection of the micro lens using optical fiber is reduced from original 4% to less than 0.3%, which effectively avoids the formation of external cavity. This method eliminates the formation of the side peak in the wavelength spectrum caused by the compression of the fast axis, which is beneficial to the application of the low-cost civil lasers. © 2015, Chinese Ceramic Society. All right reserved.

Bi Z.-F.,Shandong University | Wang L.,Shandong University | Liu X.-H.,Shandong University | Zhang S.-M.,Shandong University | And 4 more authors.
Optics Express | Year: 2012

We report on the formation and the optical properties of the planar and ridge optical waveguides in rutile TiO2 crystal by He+ ion implantation combined with micro-fabrication technologies. Planar optical waveguides in TiO2 are fabricated by high-energy (2.8 MeV) He +-ion implantation with a dose of 3 × 1016 ions/cm2 and triple low energies (450, 500, 550) keV He +-ion implantation with all fluences of 2 × 1016 ions/cm2 at room temperature. The guided modes were measured by a modal 2010 prism coupler at wavelength of 1539 nm. There are damage profiles in ionimplanted waveguides by Rutherford backscattering (RBS)/channeling measurements. The refractive-index profile of the 2.8 MeV He+- implanted waveguide was analyzed based on RCM (Reflected Calculation Method). Also ridge waveguides were fabricated by femtosecond laser ablation on 2.8 MeV ion implanted planar waveguide and Ar ion beam etching on the basis of triple keV ion implanted planar waveguide, separately. The loss of the ridge waveguide was estimated. The measured near-field intensity distributions of the planar and ridge modes are all shown. © 2012 Optical Society of America.

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