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Pessac, France

Moro N.,French Atomic Energy Commission | Moro N.,Paris-Sorbonne University | Heydemann K.,Paris-Sorbonne University | Dehbaoui A.,SERMA Technologies | And 2 more authors.
Proceedings of the 2014 IEEE International Symposium on Hardware-Oriented Security and Trust, HOST 2014 | Year: 2014

Injection of transient faults can be used as a way to attack embedded systems. On embedded processors such as microcontrollers, several studies showed that such a transient fault injection with glitches or electromagnetic pulses could corrupt either the data loads from the memory or the assembly instructions executed by the circuit. Some countermeasure schemes which rely on temporal redundancy have been proposed to handle this issue. Among them, several schemes add this redundancy at assembly instruction level. In this paper, we perform a practical evaluation for two of those countermeasure schemes by using a pulsed electromagnetic fault injection process on a 32-bit microcontroller. We provide some necessary conditions for an efficient implementation of those countermeasure schemes in practice. We also evaluate their efficiency and highlight their limitations. To the best of our knowledge, no experimental evaluation of the security of such instruction-level countermeasure schemes has been published yet. © 2014 IEEE. Source


Chenniki W.,University of Bordeaux 1 | Bord-Majek I.,University of Bordeaux 1 | Louarn M.,Polyrise | Gaud V.,Polyrise | And 6 more authors.
EMPC 2013 - European Microelectronics Packaging Conference: The Winding Roads of Electronics Packaging | Year: 2013

The development of a new generation of innovative thermoplastics for microelectronics and photonics applications is essential to make cavity packages able to compete with ceramic packages in terms of weight, cost and design flexibility (transparent materials for optical components). Among plastic materials, thermoplastic resins such as Liquid Crystal Polymer (LCP) offer attractive properties including low gas permeation, high temperature resistance, thermal stability and low dielectric constant (3.1 at 1 MHz and 2.8 at 10 GHz). In order to reduce anisotropic mechanical properties inducing a discrepancy in CTE and Young's modulus values various approaches are currently studied in particular the addition of mineral fillers into the LCP. Silicon dioxide (SiO2) is commonly used as additive compound because both it improves mechanical properties of polymers and has a low dielectric constant. However agglomeration of fillers affects the dispersion into LCP. An original approach consists in a chemical functionalization of SiO2 particles to enhance the dispersion. Two chemical functions (phenyl and hydroxyl) are studied using various filler contents (10 and 20%wt in the LCP). Composite materials are analyzed by Scanning Electron Microscopy to observe the spatial distribution of the functionalized particles. Thermal and mechanical properties (CTE and Young's modulus) of each composite are characterized and compared. In a final point, long-term reliability based on the proposed formulations of the LCP composite is evaluated by FEM simulations. © 2013 IMAPS. Source


Lancia J.,SERMA Technologies
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics) | Year: 2013

In this paper, we present a paradigm for combined attacks on Java Cards that lowers the requirements on the localization precision of the fault injection. The attack relies on educated objects allocation to create favorable memory patterns that raise the chances of success of the combined attack. In order to maximize the probability of successful injection, we determine the optimal parameters depending on the physical properties of the targeted platform. Finally, we demonstrate the efficiency of our approach through fault injection simulation. © 2013 Springer-Verlag. Source


Lambert B.,United Monolithic Semiconductor | Labat N.,University of Bordeaux 1 | Carisetti D.,Thales Alenia | Karboyan S.,CNRS Laboratory for Analysis and Architecture of Systems | And 8 more authors.
Microelectronics Reliability | Year: 2012

In this paper, leakage current signatures in AlGaN HEMT are studied after storage at 300 °C. Electrical characterization of the gate to source diode as a function of the temperature has been performed on HEMT with two different gate pad topologies, but it has not allowed identifying significant difference in the electron transport mechanisms. In forward and low reverse bias, the preeminent conduction mechanism can be attributed to thermionic field emission (TFE). By localized FIB cuts, Optical Beam Induced Resistance Change (OBIRCh) analysis was used to localize current path. Results tend to indicate that mechanical stresses in the gate structure strongly influences the leakage current of the transistor. The OBIRCh analysis technique, widely used in silicon technology, appears to be a very efficient tool to localize leakage paths, in particular for HEMT topology with source terminated field plate. © 2012 Elsevier Ltd. All rights reserved. Source


Martinelli L.,CEA Saclay Nuclear Research Center | Desgranges C.,CEA Saclay Nuclear Research Center | Rouillard F.,CEA Saclay Nuclear Research Center | Ginestar K.,CEA Saclay Nuclear Research Center | And 2 more authors.
Corrosion Science | Year: 2015

Fe-9Cr steel was oxidized in pure water vapour and in CO2 at 550°C. In both environments the Fe-Cr spinel layer was composed of small equiaxed grains which stoichiometry evolved from Fe2.7Cr0.3O4 to Fe2CrO4 in H2O and from Fe2.6Cr0.4O4 to Fe1.9Cr1.1O4 in CO2. In both cases the mean stoichiometry was Fe2.3Cr0.7O4. Single oxidation mechanism was proposed: the "available space model". Carbon for oxidation in CO2 and hydrogen for oxidation in H2O were detected at metal/oxide interface within the steel. These atoms could be responsible for nanometric cavities formation by trapping vacancies created by outward cationic diffusion. © 2015 Elsevier Ltd. Source

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