Seoul, South Korea
Seoul, South Korea

Seoul Semiconductor Co., Ltd is a Korean company manufacturing LED devices. The company is listed on KOSDAQ.The company is producing LED packages in two plants in Ansan, Korea. The total production capacity is 4 billion LED packages per month. Wikipedia.


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Patent
Seoul Semiconductor | Date: 2017-03-01

Disclosed is a light emitting device. The light emitting device comprises: a first lead and a second lead which are spaced apart from each other; a body part comprising a base, a reflector, and a cavity; and a light emitting diode which is disposed in the cavity, wherein the first lead includes a first bottom lead and a first top lead located on the first bottom lead, and the second lead includes a second bottom lead and a second top lead located on the second bottom lead, and wherein the shape of a spaced-apart region of the first top lead and the second top lead is different from the shape of a spaced-apart region of the first bottom lead and the second bottom lead, the spaced-apart region of the first top lead and the second top lead having a shape which bends at least one time.


Patent
Seoul Semiconductor | Date: 2017-02-22

Disclosed herein are a driving circuit and a lighting apparatus for a light emitting diode capable of improving a flicker, light efficiency, and electrical characteristics. The disclosed driving circuit for a light emitting diode includes: a dimmer modulating an AC voltage input depending on a selected dimming level; a rectifier full-wave rectifying the modulated AC voltage output from the dimmer to generate and output a driving voltage; and a driving module receiving the driving voltage of the rectifier to detect the selected dimming level and controlling a driving mode of a plurality of light emitting diode groups depending on the detected dimming level, in which the driving module selects one of a resistance driving mode driving all the plurality of light emitting diode groups and a sequential driving mode sequentially driving the plurality of light emitting diode groups to improve light efficiency and electrical characteristics.


Patent
SixPoint Materials, Inc. and Seoul Semiconductor | Date: 2016-06-27

Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactors longitudinal axis and seed material positioned at the reactors inner wall and along the reactors longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactors longitudinal axis and deposits on the seed material positioned by the reactors inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.


Patent
SixPoint Materials, Inc. and Seoul Semiconductor | Date: 2016-06-27

Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactors longitudinal axis and seed material positioned at the reactors inner wall and along the reactors longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactors longitudinal axis and deposits on the seed material positioned by the reactors inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed.


Patent
Seoul Semiconductor | Date: 2016-07-25

A display apparatus and a method of manufacturing the same are disclosed. The display apparatus includes: a first substrate including a light emitting diode part including a plurality of light emitting diodes regularly arranged on the first substrate; and a second substrate including a TFT panel unit including a plurality of TFTs driving the light emitting diodes. The first substrate and the second substrate are coupled to each other so as to face each other such that the light emitting diodes are electrically connected to the TFTs, respectively. The display apparatus is implemented using micro-light emitting diodes formed of nitride semiconductors and thus can provide high efficiency and high resolution to be applicable to a wearable apparatus while reducing power consumption.


Patent
Seoul Semiconductor | Date: 2016-06-30

Disclosed herein is a light emitting diode. The light emitting diode includes: a light emitting diode chip; a first molding portion covering the light emitting diode chip and having a first index of refraction; a second molding portion covering the first molding portion and having a second index of refraction, wherein the second index of refraction is not higher than the first index of refraction. The light emitting diode chip is covered by a molding portion having a high index of refraction and a molding portion having a low index of refraction and covering the molding portion having a high index of refraction in order to reduce total reflection in the molding portions through reduction in difference in index of refraction between external air and the molding portion having a high index of refraction, thereby improving quantity of light.


Patent
Seoul Semiconductor | Date: 2016-09-26

A light emitting diode (LED) package includes an LED chip, a first lead frame and a second lead frame electrically connected to the LED chip and separated by a space, and a housing disposed on the first lead frame and the second lead frame. The housing includes an external housing surrounding a cavity, the cavity exposing a first portion of the first lead frame and a first portion of the second lead frame, and an internal housing disposed in the space, the internal housing covering a top portion of the first lead frame and a top portion of the second lead frame.


Patent
Seoul Semiconductor | Date: 2016-08-30

A light-emitting device includes first and second lead frames spaced apart from each other, the first and second lead frames each including a top surface, an opposing bottom surface, and sidewalls arranged between the top surface and the bottom surface thereof, in which at least one of the first and second lead frames include three inset sidewalls that at least partially define a fixing space, the fixing space undercutting at least one of the first lead frame and second lead frame, a light-emitting diode chip disposed on the top surface of the first or second lead frame, and the top surfaces of the first and second lead frames are substantially flat.


Patent
Seoul Semiconductor | Date: 2016-05-04

A light source module including a circuit board, a first light emitting device mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a reflective portion disposed on the circuit board and having at least one recess accommodating the first light emitting device, and a bonding member disposed between the circuit board and the reflective portion. The reflective portion has a height greater than a height of the first light emitting device.


Patent
Seoul Semiconductor | Date: 2016-08-18

A light-emitting module including a circuit board, a light-emitting device disposed on the circuit board, and a lens disposed on the circuit board and configured to distribute light emitted from the light emitting device. The lens includes a concave portion having an incidence surface configured to receive incident light emitted from the light-emitting device, and the light emitting device is disposed within the concave portion of the lens.

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