Seoul, South Korea
Seoul, South Korea

Seoul Semiconductor Co., Ltd is a Korean company manufacturing LED devices. The company is listed on KOSDAQ.The company is producing LED packages in two plants in Ansan, Korea. The total production capacity is 4 billion LED packages per month. Wikipedia.


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Patent
Seoul Semiconductor | Date: 2017-03-01

Disclosed is a light emitting device. The light emitting device comprises: a first lead and a second lead which are spaced apart from each other; a body part comprising a base, a reflector, and a cavity; and a light emitting diode which is disposed in the cavity, wherein the first lead includes a first bottom lead and a first top lead located on the first bottom lead, and the second lead includes a second bottom lead and a second top lead located on the second bottom lead, and wherein the shape of a spaced-apart region of the first top lead and the second top lead is different from the shape of a spaced-apart region of the first bottom lead and the second bottom lead, the spaced-apart region of the first top lead and the second top lead having a shape which bends at least one time.


Patent
Seoul Semiconductor | Date: 2017-02-22

Disclosed herein are a driving circuit and a lighting apparatus for a light emitting diode capable of improving a flicker, light efficiency, and electrical characteristics. The disclosed driving circuit for a light emitting diode includes: a dimmer modulating an AC voltage input depending on a selected dimming level; a rectifier full-wave rectifying the modulated AC voltage output from the dimmer to generate and output a driving voltage; and a driving module receiving the driving voltage of the rectifier to detect the selected dimming level and controlling a driving mode of a plurality of light emitting diode groups depending on the detected dimming level, in which the driving module selects one of a resistance driving mode driving all the plurality of light emitting diode groups and a sequential driving mode sequentially driving the plurality of light emitting diode groups to improve light efficiency and electrical characteristics.


Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.


A warm white light emitting apparatus includes a first light emitting diode (LED)-phosphor combination to generate a base light that is white or yellowish white and a second LED-phosphor combination to generate a Color Rendering Index (CRI) adjusting light. The base light the CRI adjusting light together make a warm white light having a color temperature of 2500 to 4500K.


Patent
SixPoint Materials, Inc. and Seoul Semiconductor | Date: 2017-03-29

In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0x11, 0x2Aly2In1-x2-y2N (0x21, 0x2+y21). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.


Patent
Seoul Semiconductor | Date: 2017-01-04

A light-emitting device including a film including a plurality of holes, upper conductive patterns for covering the plurality of holes, lower conductive patterns extended from the upper conductive pattern so as to be received in the holes, a bridge part for connecting adjacent upper conductive patterns, and a light-emitting diode chip installed in each of the upper conductive patterns, so that the device may be embodied in a thin film-type as well as maximizes the optical efficiency and heat-radiation, providing an advantage of reduced manufacturing time and cost.


Patent
Seoul Semiconductor | Date: 2017-02-06

A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.


Patent
Seoul Semiconductor | Date: 2017-02-06

A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.


Patent
Seoul Semiconductor | Date: 2017-02-06

A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.


Patent
Seoul Semiconductor | Date: 2017-02-10

A light-emitting device includes a substrate, a first array of light-emitting elements connected in series and arranged along a first straight line on the substrate, a p-electrode disposed on the substrate and connected to the first array, a second array of light-emitting elements connected in series, arranged along a second straight line on the substrate, and connected to the first array, and an n-electrode disposed on the substrate and connected to the second array. The p-electrode has a surface that faces and is substantially parallel to a surface of the n-electrode.

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