Seoul, South Korea
Seoul, South Korea

Seoul Semiconductor Co., Ltd is a Korean company manufacturing LED devices. The company is listed on KOSDAQ.The company is producing LED packages in two plants in Ansan, Korea. The total production capacity is 4 billion LED packages per month. Wikipedia.

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Patent
Seoul Semiconductor | Date: 2017-03-01

Disclosed is a light emitting device. The light emitting device comprises: a first lead and a second lead which are spaced apart from each other; a body part comprising a base, a reflector, and a cavity; and a light emitting diode which is disposed in the cavity, wherein the first lead includes a first bottom lead and a first top lead located on the first bottom lead, and the second lead includes a second bottom lead and a second top lead located on the second bottom lead, and wherein the shape of a spaced-apart region of the first top lead and the second top lead is different from the shape of a spaced-apart region of the first bottom lead and the second bottom lead, the spaced-apart region of the first top lead and the second top lead having a shape which bends at least one time.


Patent
Seoul Semiconductor | Date: 2017-02-22

Disclosed herein are a driving circuit and a lighting apparatus for a light emitting diode capable of improving a flicker, light efficiency, and electrical characteristics. The disclosed driving circuit for a light emitting diode includes: a dimmer modulating an AC voltage input depending on a selected dimming level; a rectifier full-wave rectifying the modulated AC voltage output from the dimmer to generate and output a driving voltage; and a driving module receiving the driving voltage of the rectifier to detect the selected dimming level and controlling a driving mode of a plurality of light emitting diode groups depending on the detected dimming level, in which the driving module selects one of a resistance driving mode driving all the plurality of light emitting diode groups and a sequential driving mode sequentially driving the plurality of light emitting diode groups to improve light efficiency and electrical characteristics.


Patent
Seoul Semiconductor | Date: 2017-02-10

A light-emitting device includes a substrate, a first array of light-emitting elements connected in series and arranged along a first straight line on the substrate, a p-electrode disposed on the substrate and connected to the first array, a second array of light-emitting elements connected in series, arranged along a second straight line on the substrate, and connected to the first array, and an n-electrode disposed on the substrate and connected to the second array. The p-electrode has a surface that faces and is substantially parallel to a surface of the n-electrode.


Patent
Seoul Semiconductor | Date: 2017-02-06

A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.


Patent
Seoul Semiconductor | Date: 2017-02-06

A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.


Patent
Seoul Semiconductor | Date: 2017-02-06

A light emitting apparatus is disclosed. The light emitting apparatus includes a light-transmissive substrate having a top surface and a bottom surface, at least one semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, a reflective part disposed over the semiconductor light emitting device to reflect light from the semiconductor light emitting device toward the light-transmissive substrate, and a first wavelength converter disposed between the light-transmissive substrate and the reflective part.


A warm white light emitting apparatus includes a first light emitting diode (LED)-phosphor combination to generate a base light that is white or yellowish white and a second LED-phosphor combination to generate a Color Rendering Index (CRI) adjusting light. The base light the CRI adjusting light together make a warm white light having a color temperature of 2500 to 4500K.


Patent
Seoul Semiconductor | Date: 2017-01-04

A light-emitting device including a film including a plurality of holes, upper conductive patterns for covering the plurality of holes, lower conductive patterns extended from the upper conductive pattern so as to be received in the holes, a bridge part for connecting adjacent upper conductive patterns, and a light-emitting diode chip installed in each of the upper conductive patterns, so that the device may be embodied in a thin film-type as well as maximizes the optical efficiency and heat-radiation, providing an advantage of reduced manufacturing time and cost.


Patent
SixPoint Materials, Inc. and Seoul Semiconductor | Date: 2017-03-29

In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0x11, 0x2Aly2In1-x2-y2N (0x21, 0x2+y21). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.


Patent
Seoul Semiconductor | Date: 2017-04-19

Disclosed is a dimmable alternating current-driven light emitting element lighting apparatus. The disclosed alternating current-driven light emitting element lighting apparatus of the present invention comprises: a triac dimmer for generating a modulated alternating current voltage by modulating a phase of alternating current power according to a selected level of dimming; a rectifying unit for generating drive voltage by full-wave-rectifying the alternating current voltage having the phase modulated by the triac dimmer; a dimming level detection unit for detecting a dimming level according to the drive voltage; a phase cut reference setting unit for setting a phase cut reference value to be compared with the detected dimming level; and a light emitting element driving module for constant-current-controlling a plurality of light emitting element groups by comparing the detected dimming level with the phase cut reference value, wherein the light emitting element driving module comprises a light emitting element current blocking unit for blocking a drive current supplied to the plurality of lighting emitting element groups when the dimming level is lower than the phase cut reference value. Thus, the present invention can prevent flickering by blocking a drive current of the entirety of the plurality of light emitting element groups at a dimming level lower than a preconfigured phase cut reference value, and can improve the compatibility of a dimmer by improving dimming characteristics changing according to characteristics of the triac dimmer.

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