SensL Technologies LTD | Date: 2016-10-27
The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coupling the primary bus lines to the at least one segmented secondary bus line.
Agency: European Commission | Branch: FP7 | Program: CP-FP | Phase: HEALTH.2013.2.2.1-2 | Award Amount: 6.99M | Year: 2013
The key concept behind this proposal is the development of a very high resolution and high efficiency brain dedicated Positron Emission Tomograph (PET) imager that can visualize neurotransmitter pathways and their disruptions in the quest to better diagnose and consequently to better treat schizophrenia. In addition, the plan is for this compact PET imager to be integrated with a Magnetic Resonance Imager Radio Frequency (MRI RF) system to be able to operate as a brain insert in a hybrid imaging setup with practically any MRI scanner. From the technical point of view, we propose to optimize the PET technology for imaging of the human brain with the accuracy typically achieved for small animal brain imaging. To achieve this, we will incorporate the solid state based MRI-compatible PET modules that will be designed to achieve below systemic 1mm spatial resolution in a tomographic reconstruction of the human brain. We aim to achieve the level of PET-MRI compatibility allowing for simultaneous PET and MRI imaging. By combining PET measurements of neurotransmission with fMRI (functional MRI) measurements of Blood Oxygen Level Detection (BOLD) signal changes we will advance to a position where it is possible to learn more about the neurochemical determination of neural activity reflected in BOLD signal changes. The novelty is that both the PET and RF coil systems are integrated into a portable and compact design dedicated to brain examination. This will allow current MR equipment to be easily upgraded into PET/MR systems. To achieve its diagnostic goal, MINDView will be paired with the set of dedicated specific PET imaging agents and endogenous compounds that will be labeled with short-lived positron isotopes. The goal is that dopaminergic, glutamatergic and other pathways will be able to be studied with the new high performance imaging tool. Innovative paradigms such as activation and perturbation and their impact on brain function will be in focus.
Agency: European Commission | Branch: FP7 | Program: CP | Phase: SEC-2010.1.3-3 | Award Amount: 4.77M | Year: 2011
The detection of IED manufacturing facilities is crucial for the security of citizens, as well as infrastructures and utilities. Current sensing methods suffer from susceptibility to false positive results due to environmental contaminants, or false negative results to interfering compounds. The need exists for a single distributed network, with a common interface and communications protocol, to manage and communicate with a variety of different sensor technologies, and use the combined sensor data to produce clear and unequivocal results with low false positive/negative readings. The goal of the CommonSense project is to create and demonstrate this sensor network, through the simultaneous and parallel development of novel materials, portable sensors and a wireless communications network, which uses chemometric data processing algorithms to learn to recognise trace amounts of explosives, and differentiate them from interferents. The partners will produce a series of novel organic, polymeric and nanocrystalline materials with tuned optoelectronic properties and surface affinities to be used as the active sensor elements. These elements will be incorporated into devices based on optical, electrical, and other readout mechanisms, for detection of airborne and waterborne analytes. The CommonSense project will also incorporate radiation detectors to detect this growing security threat of dirty bombs, where sub-critical amounts of radioactive materials, obtained from medical waste or other sources, are incorporated into IEDs. The key point in the use of such a variety of sensor technologies is that no one substance can act as an interferent to all of the sensors, thus reducing false positives and negatives. Eliminating the remaining false readings will be achieved through use of the chemometric algorithms in order to teach itself to recognise the fingerprint sensor response to different explosives types and ignore interfering compounds.
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: ICT-03-2016 | Award Amount: 4.57M | Year: 2017
The objective of INSPEX is to make obstacle detection capabilities that are currently only feasible on autonomous vehicles available as a personal portable/wearable multi-sensor, miniaturised, low power spatial exploration system. The INSPEX System will be used for real-time 3D detection, location and warning of obstacles under all environmental conditions in indoor and outdoor environments with static and mobile obstacles. Applications include navigation for the visually/mobility impaired, safer human navigation in reduced visibility conditions and small robot/drone obstacle avoidance. The partners bring state-of-the-art range sensors (LiDAR, UWB radar and MEMS ultrasound) to the project. INSPEX will miniaturise and reduce the power consumption of these sensors to facilitate systems integration. These will then be integrated with an IMU, environmental sensing, signal and data processing, wireless communications, power efficient data fusion and user interface, all in a miniature, low power system designed to operate within wider smart/IoT environments. The main INSPEX Demonstrator will embed the INSPEX System in a white cane for the visually impaired and provide 3D spatial audio feedback on obstacle location. INSPEX directly addresses: - ICT-3 Challenge to develop and manufacture smart objects and systems that closely integrate sensors, actuators, innovative MEMS, processing power, embedded memory and communication capabilities, all optimising the use of supply power that can easily be made interoperable within systems of systems - RIA aims to make technological breakthroughs and their validation in laboratory environments of the next generations of miniaturised smart integrated systems and industrial-relevant technological developments, modelling and validation that will enable solutions in particular for health and well-being safety and security manufacturing. INSPEX is taking reliability and ethical issues strongly into consideration.
Sensl Technologies Ltd. | Date: 2011-03-23
Silicon photomultiplier and readout method A silicon photomultiplier device is provided which comprises a first electrode arranged to provide a bias voltage to the device, a second electrode arranged as a ground electrode for the device, and a third electrode arranged to provide an output signal from the device using the second electrode as the output signal ground.
SensL Technologies Ltd. | Date: 2014-05-20
The present disclosure relates to photon detectors. In particular, the present disclosure relates to high sensitivity photon detectors such as semiconductor photomultipliers. A semiconductor photomultiplier is described which comprises an array of interconnected photosensitive microcells; and at least one dark count rate (DCR) suppression element associated with the array.
Sensl Technologies Ltd. | Date: 2011-03-23
A pixellated scintillator readout arrangement is presented, the arrangement comprising a plurality of scintillator pixels arranged in a scintillator array, and a plurality of photodetectors arranged to receive light from, or address, the scintillator pixels. The photodetectors may be arranged on both a first side and a second side of the scintillator array. Each photodetector may be arranged to leave a gap adjacent to the scintillator pixel which is addressed by that photodetector. Non-photosensitive elements such as tracking and bondpads may be arranged in at least some of the gaps. Electronic components such as electronic amplifiers may be arranged in at least some of the gaps. The photodetectors may be arranged in linear arrays addressing alternate lines of scintillator pixels on either side of the scintillator array. Each photodetector may be arranged to address a single pixel (as illustrated) or more than one pixel (not shown).
SensL Technologies Ltd | Date: 2015-07-16
The present disclosure relates to a semiconductor photomultiplier comprising a substrate; an array of photosensitive cells formed on the substrate that are operably coupled between an anode and a cathode. A set of primary bus lines are provided each being associated with a corresponding set of photosensitive cells. A secondary bus line is coupled to the set of primary bus lines. An electrical conductor is provided having a plurality of connection sites coupled to respective connection locations on the secondary bus line for providing conduction paths which have lower impedance than the secondary bus line.
SensL Technologies Ltd | Date: 2014-12-19
The present disclosure relates to a semiconductor photomultiplier comprising a a substrate; an array of photosensitive elements formed on a first major surface of the substrate; a plurality of primary bus lines interconnecting the photosensitive elements; at least one segmented secondary bus line provided on a second major surface of the substrate which is operably coupled to one or more terminals; and multiple vertical interconnect access (via) extending through the substrate operably coulping the primary bus lines to the at least one segmented secondary bus line.
SensL Technologies Ltd. | Date: 2014-07-01
The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process.