Camarillo, CA, United States
Camarillo, CA, United States

Semtech Corporation is a supplier of analog and mixed-signal semiconductors. The company sells proprietary solutions and breakthrough technology in power management, protection, advanced communications, human interface, test & measurement, as well as wireless and sensing products. The Company's integrated circuits are employed in communications, computer and computer-peripheral, automated test equipment, industrial and other commercial applications. Wikipedia.


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A semiconductor device has a first substrate. A conductive layer is formed over the first substrate. A first cavity is formed through the first substrate and extending to the conductive layer. A first semiconductor die including a plurality of first interconnect structures is disposed in the first cavity. A second substrate is disposed over the first substrate. A second cavity is formed through second substrate. A second semiconductor die including a plurality of second interconnect structures is disposed in the second cavity. A discrete device or third semiconductor die is disposed over the second semiconductor die. A plurality of third interconnect structures is formed between the second substrate and discrete device or third semiconductor die. The first, second, and third interconnect structures are reflowed simultaneously. An encapsulant is deposited over and around the first semiconductor die, the second semiconductor die, and the discrete device or third semiconductor die.


A semiconductor device has a semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die. An insulating layer is formed over an active surface of the semiconductor die. A trench is formed in a non-active area of the semiconductor wafer between the semiconductor die. The trench extends partially through the semiconductor wafer. A carrier with adhesive layer is provided. The semiconductor die are disposed over the adhesive layer and carrier simultaneously as a single unit. A backgrinding operation is performed to remove a portion of the semiconductor wafer and expose the trench. The adhesive layer holds the semiconductor die in place during the backgrinding operation. An encapsulant is deposited over the semiconductor die and into the trench. The carrier and adhesive layer are removed. The encapsulated semiconductor die are cleaned and singulated into individual semiconductor devices. The electrical performance and functionality of the semiconductor devices are tested.


A semiconductor device has a plurality of first semiconductor die. A plurality of first bumps is formed over the first semiconductor die. A first protection layer is formed over the first bumps. A portion of the first semiconductor die is removed in a backgrinding operation. A backside protection layer is formed over the first semiconductor die. An encapsulant is deposited over the first semiconductor die and first bumps. A portion of the encapsulant is removed to expose the first bumps. A conductive layer is formed over the first bumps and encapsulant. An insulating layer and plurality of second bumps are formed over the conductive layer. A plurality of conductive vias is formed through the encapsulant. A plurality of the semiconductor devices is stacked with the conductive vias electrically connecting the stacked semiconductor devices. A second semiconductor die having a through silicon via is disposed over the first semiconductor die.


A semiconductor device has a first substrate. A conductive layer is formed over the first substrate. A first cavity is formed through the first substrate and extending to the conductive layer. A first semiconductor die including a plurality of first interconnect structures is disposed in the first cavity. A second substrate is disposed over the first substrate. A second cavity is formed through second substrate. A second semiconductor die including a plurality of second interconnect structures is disposed in the second cavity. A discrete device or third semiconductor die is disposed over the second semiconductor die. A plurality of third interconnect structures is formed between the second substrate and discrete device or third semiconductor die. The first, second, and third interconnect structures are reflowed simultaneously. An encapsulant is deposited over and around the first semiconductor die, the second semiconductor die, and the discrete device or third semiconductor die.


A semiconductor device has a semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die. An insulating layer is formed over an active surface of the semiconductor die. A trench is formed in a non-active area of the semiconductor wafer between the semiconductor die. The trench extends partially through the semiconductor wafer. A carrier with adhesive layer is provided. The semiconductor die are disposed over the adhesive layer and carrier simultaneously as a single unit. A backgrinding operation is performed to remove a portion of the semiconductor wafer and expose the trench. The adhesive layer holds the semiconductor die in place during the backgrinding operation. An encapsulant is deposited over the semiconductor die and into the trench. The carrier and adhesive layer are removed. The encapsulated semiconductor die are cleaned and singulated into individual semiconductor devices. The electrical performance and functionality of the semiconductor devices are tested.


A semiconductor device has a plurality of first semiconductor die (104). A plurality of first bumps (114) is formed over the first semiconductor die. A first protection layer (116) is formed over the first bumps. A portion of the first semiconductor die is removed in a backgrinding operation. A backside protection layer (122,222) is formed over the first semiconductor die. An encapsulant is deposited (138,208) over the first semiconductor die and first bumps. A portion of the encapsulant is removed to expose the first bumps. A conductive layer (146,216) is formed over the first bumps and encapsulant. An insulating layer (148,218) and plurality of second bumps (152,220) are formed over the conductive layer. A plurality of conductive vias (248) may be formed through the encapsulant. A plurality of the semiconductor devices may be stacked with the conductive vias electrically connecting the stacked semiconductor devices. A second semiconductor die (192) having a through silicon via (198) may be disposed over the first semiconductor die.


A communication system includes a multiplexer configured to multiplex a first set of data channels into a first data channel and to multiplex a second set of data channels into a second data channel, and a delay adjuster configured to adjustably delay the first data channel based on a delay adjust command. The communication system also includes a first amplifier configured to amplify the delayed first channel into a first output data channel, and a second amplifier configured to amplify the second data channel into a second output data channel. The communication system further includes a first driver configured to convert the first output data channel into a first drive signal to drive an optical modulator, and a second driver configured to convert the second output data channel into a second drive signal to drive the optical modulator.


A proximity sensor has a sensing node. A radio frequency signal is received at the sensing node (110). The radio frequency signal is coupled to an intermediate node (109) through a first capacitor (130). The radio frequency signal is coupled from the intermediate node to a ground node through a second capacitor (132). An RF amplifier (38) is coupled to the sensing node (110). The radio frequency signal is generated using the RF amplifier (38). A third capacitor (133) is coupled between the RF amplifier and the sensing node. An antenna (32) is coupled to the sensing node. The radio frequency signal is transmitted using the antenna. A capacitance of the antenna is measured using the proximity sensor (56). The capacitance of the antenna is compared to a threshold to determine proximity of a conductive object. An inductor (134) is coupled between the sensing node and the antenna. A shielding area (70) is coupled to the intermediate node.


Patent
Semtech | Date: 2016-06-08

A proximity sensor includes a capacitive touch controller. A first shielding area is coupled to a first shield terminal of the capacitive touch controller. A second shield area is coupled to a second shield terminal of the capacitive touch controller. A first sensing element is disposed adjacent to the first shielding area. The first sensing element is coupled to a first sensing terminal of the capacitive touch controller. A second sensing element is disposed adjacent to the second shielding area. The second sensing element is coupled to a second sensing terminal of the capacitive touch controller. The capacitive touch controller is configured to associate the first sensing element with the first shielding area. A self-capacitance of the first sensing element is measured while the second shielding area is inactive. The self-capacitance of the first sensing element is measured at a first frequency.


Patent
Semtech | Date: 2016-04-06

A system and a method for time synchronization on a wireless network, based on the exchange of Chirp Spread Spectrum information. Time signals are broadcast from a master (40) to a plurality of slave devices (101, 102, 103). The modulation used includes a compensation of offsets in the masters system clock by symbol-wide frequency shifts that is particularly precise, fine and simple to implement. The system and method of the invention are particularly suitable for synchronizing a telecommunication cell network.

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