Camarillo, CA, United States
Camarillo, CA, United States

Semtech Corporation is a supplier of analog and mixed-signal semiconductors. The company sells proprietary solutions and breakthrough technology in power management, protection, advanced communications, human interface, test & measurement, as well as wireless and sensing products. The Company's integrated circuits are employed in communications, computer and computer-peripheral, automated test equipment, industrial and other commercial applications. Wikipedia.

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The present invention proposes a weighted Centroid Localisation (WCL) algorithm, which does the location estimation based only on the known positions of the gateways and the measurements of the Received Signal Strength Indication (RSSI) at the gateways. The algorithm computes the weight of the gateway based on their rank when the gateways are sorted by their relative RSSI (230, 240). Simulations have demonstrated the algorithms robustness under different multipath/fading channel conditions and its good location performance.


A system comprising at least a mobile device (110) and a plurality of gateways (120a-120g) whose positions are known, wherein the gateways (120a-120g) are operatively arranged to determine for each gateway a time differences of arrival (TDOA) of a signal originated by the mobile device (110). A solver unit (160) computes the position of the mobile device (110), based on said time difference of arrival (TDOA). The solver unit (160) implements ELM and a LMS algorithm to compute the mobile devices one-shot location estimate based on one or several packet transmissions, and includes a procedure to decide if an LMS algorithm needs to be run and a procedure to select or combine the location output from ELM and LMS for the one-shot location output. Further the solver unit comprises a tracking algorithm to realise the tracking of the moving device or to improve location accuracy should the device static.


A semiconductor device has a semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die. An insulating layer is formed over an active surface of the semiconductor die. A trench is formed in a non-active area of the semiconductor wafer between the semiconductor die. The trench extends partially through the semiconductor wafer. A carrier with adhesive layer is provided. The semiconductor die are disposed over the adhesive layer and carrier simultaneously as a single unit. A backgrinding operation is performed to remove a portion of the semiconductor wafer and expose the trench. The adhesive layer holds the semiconductor die in place during the backgrinding operation. An encapsulant is deposited over the semiconductor die and into the trench. The carrier and adhesive layer are removed. The encapsulated semiconductor die are cleaned and singulated into individual semiconductor devices. The electrical performance and functionality of the semiconductor devices are tested.


A semiconductor device has a plurality of first semiconductor die (104). A plurality of first bumps (114) is formed over the first semiconductor die. A first protection layer (116) is formed over the first bumps. A portion of the first semiconductor die is removed in a backgrinding operation. A backside protection layer (122,222) is formed over the first semiconductor die. An encapsulant is deposited (138,208) over the first semiconductor die and first bumps. A portion of the encapsulant is removed to expose the first bumps. A conductive layer (146,216) is formed over the first bumps and encapsulant. An insulating layer (148,218) and plurality of second bumps (152,220) are formed over the conductive layer. A plurality of conductive vias (248) may be formed through the encapsulant. A plurality of the semiconductor devices may be stacked with the conductive vias electrically connecting the stacked semiconductor devices. A second semiconductor die (192) having a through silicon via (198) may be disposed over the first semiconductor die.


A communication system includes a multiplexer configured to multiplex a first set of data channels into a first data channel and to multiplex a second set of data channels into a second data channel, and a delay adjuster configured to adjustably delay the first data channel based on a delay adjust command. The communication system also includes a first amplifier configured to amplify the delayed first channel into a first output data channel, and a second amplifier configured to amplify the second data channel into a second output data channel. The communication system further includes a first driver configured to convert the first output data channel into a first drive signal to drive an optical modulator, and a second driver configured to convert the second output data channel into a second drive signal to drive the optical modulator.


A semiconductor device has a first substrate. A conductive layer is formed over the first substrate. A first cavity is formed through the first substrate and extending to the conductive layer. A first semiconductor die including a plurality of first interconnect structures is disposed in the first cavity. A second substrate is disposed over the first substrate. A second cavity is formed through second substrate. A second semiconductor die including a plurality of second interconnect structures is disposed in the second cavity. A discrete device or third semiconductor die is disposed over the second semiconductor die. A plurality of third interconnect structures is formed between the second substrate and discrete device or third semiconductor die. The first, second, and third interconnect structures are reflowed simultaneously. An encapsulant is deposited over and around the first semiconductor die, the second semiconductor die, and the discrete device or third semiconductor die.


A mobile device has a proximity sensor. A compensation value of the proximity sensor is determined. The compensation value is compared to a reference compensation value to determine validity of the compensation value. A capacitance of the proximity sensor is measured. A value of the capacitance of the proximity sensor is adjusted based on the compensation value. A coefficient defining a relationship between a capacitance of the proximity sensor and a temperature of the mobile device is calculated. A temperature sensor is coupled to the proximity sensor. The temperature of the mobile device is measured. A value of the capacitance of the proximity sensor is adjusted based on the coefficient and the temperature of the mobile device. The adjusted capacitance value is compared to a threshold capacitance value to determine proximity of an object to the mobile device. A radio frequency signal is adjusted by detecting proximity.


A mobile device includes a conductive element and a ground node. The conductive element is configured to be detected by a proximity sensor. A switch is coupled between the conductive element and ground node. The conductive element is coupled to the ground node by closing the switch. A first memory element is configured to control the switch. The first memory element includes a register bit coupled to a control terminal of the switch. A data output is configured to control the switch. A FIFO is configured to provide data to the data output. The first memory element includes a FIFO. A capacitive touch controller is configured to measure a capacitance of the conductive element. A digital processing unit is configured to convert the capacitance of the conductive element to a bit of data. A second memory element is configured to store the bit of data.


A semiconductor device has a first substrate. A conductive layer is formed over the first substrate. A first cavity is formed through the first substrate and extending to the conductive layer. A first semiconductor die including a plurality of first interconnect structures is disposed in the first cavity. A second substrate is disposed over the first substrate. A second cavity is formed through second substrate. A second semiconductor die including a plurality of second interconnect structures is disposed in the second cavity. A discrete device or third semiconductor die is disposed over the second semiconductor die. A plurality of third interconnect structures is formed between the second substrate and discrete device or third semiconductor die. The first, second, and third interconnect structures are reflowed simultaneously. An encapsulant is deposited over and around the first semiconductor die, the second semiconductor die, and the discrete device or third semiconductor die.


A semiconductor device has a first semiconductor die disposed over a substrate. A plurality of composite interconnect structures are formed over the semiconductor die. The composite interconnect structures have a non-fusible conductive pillar and a fusible layer formed over the non-fusible conductive pillar. The fusible layer is reflowed to connect the first semiconductor die to a conductive layer of the substrate. The non-fusible conductive pillar does not melt during reflow eliminating a need to form a solder resist over the substrate. An encapsulant is deposited around the first semiconductor die and composite interconnect structures. The encapsulant flows between the active surface of the first semiconductor die and the substrate. A second semiconductor die is disposed over the substrate adjacent to the first semiconductor die. A heat spreader is disposed over the first semiconductor die. A portion of the encapsulant is removed to expose the heat spreader.

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