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Wiseguyreports.Com Adds “Thin Film Metrology Systems -Market Demand, Growth, Opportunities and Analysis of Top Key Player Forecast To 2022” To Its Research Database Global Thin Film Metrology Systems market competition by top manufacturers/players, with Thin Film Metrology Systems sales volume, Price (USD/Unit), revenue (Million USD) and market share for each manufacturer/player; the top players including Geographically, this report split global into several key Regions, with sales (K Units), revenue (Million USD), market share and growth rate of Thin Film Metrology Systems for these regions, from 2012 to 2022 (forecast), covering On the basis of product, this report displays the sales volume (K Units), revenue (Million USD), product price (USD/Unit), market share and growth rate of each type, primarily split into On the basis on the end users/applications, this report focuses on the status and outlook for major applications/end users, sales volume, market share and growth rate of Thin Film Metrology Systems for each application, including Semiconductor MEMS Data Storage High-Brightness LED (HB-LED) Nanometrics Others Global Thin Film Metrology Systems Sales Market Report 2017 1 Thin Film Metrology Systems Market Overview 1.1 Product Overview and Scope of Thin Film Metrology Systems 1.2 Classification of Thin Film Metrology Systems by Product Category 1.2.1 Global Thin Film Metrology Systems Market Size (Sales) Comparison by Type (2012-2022) 1.2.2 Global Thin Film Metrology Systems Market Size (Sales) Market Share by Type (Product Category) in 2016 1.2.3 Opaque Films 1.2.4 Transparent Films 1.2.5 Thick Films 1.2.6 Others 1.3 Global Thin Film Metrology Systems Market by Application/End Users 1.3.1 Global Thin Film Metrology Systems Sales (Volume) and Market Share Comparison by Application (2012-2022) 1.3.2 Semiconductor 1.3.3 MEMS 1.3.4 Data Storage 1.3.5 High-Brightness LED (HB-LED) 1.3.6 Nanometrics 1.3.7 Others 1.4 Global Thin Film Metrology Systems Market by Region 1.4.1 Global Thin Film Metrology Systems Market Size (Value) Comparison by Region (2012-2022) 1.4.2 United States Thin Film Metrology Systems Status and Prospect (2012-2022) 1.4.3 China Thin Film Metrology Systems Status and Prospect (2012-2022) 1.4.4 Europe Thin Film Metrology Systems Status and Prospect (2012-2022) 1.4.5 Japan Thin Film Metrology Systems Status and Prospect (2012-2022) 1.4.6 Southeast Asia Thin Film Metrology Systems Status and Prospect (2012-2022) 1.4.7 India Thin Film Metrology Systems Status and Prospect (2012-2022) 1.5 Global Market Size (Value and Volume) of Thin Film Metrology Systems (2012-2022) 1.5.1 Global Thin Film Metrology Systems Sales and Growth Rate (2012-2022) 1.5.2 Global Thin Film Metrology Systems Revenue and Growth Rate (2012-2022) 9 Global Thin Film Metrology Systems Players/Suppliers Profiles and Sales Data 9.1 KLA-Tencor 9.1.1 Company Basic Information, Manufacturing Base and Competitors 9.1.2 Thin Film Metrology Systems Product Category, Application and Specification 9.1.2.1 Product A 9.1.2.2 Product B 9.1.3 KLA-Tencor Thin Film Metrology Systems Sales, Revenue, Price and Gross Margin (2012-2017) 9.1.4 Main Business/Business Overview 9.2 Nanometrics 9.2.1 Company Basic Information, Manufacturing Base and Competitors 9.2.2 Thin Film Metrology Systems Product Category, Application and Specification 9.2.2.1 Product A 9.2.2.2 Product B 9.2.3 Nanometrics Thin Film Metrology Systems Sales, Revenue, Price and Gross Margin (2012-2017) 9.2.4 Main Business/Business Overview 9.3 Nova Measuring Instruments 9.3.1 Company Basic Information, Manufacturing Base and Competitors 9.3.2 Thin Film Metrology Systems Product Category, Application and Specification 9.3.2.1 Product A 9.3.2.2 Product B 9.3.3 Nova Measuring Instruments Thin Film Metrology Systems Sales, Revenue, Price and Gross Margin (2012-2017) 9.3.4 Main Business/Business Overview 9.4 Rudolph Technologies 9.4.1 Company Basic Information, Manufacturing Base and Competitors 9.4.2 Thin Film Metrology Systems Product Category, Application and Specification 9.4.2.1 Product A 9.4.2.2 Product B 9.4.3 Rudolph Technologies Thin Film Metrology Systems Sales, Revenue, Price and Gross Margin (2012-2017) 9.4.4 Main Business/Business Overview 9.5 Hitachi High-Technologies 9.5.1 Company Basic Information, Manufacturing Base and Competitors 9.5.2 Thin Film Metrology Systems Product Category, Application and Specification 9.5.2.1 Product A 9.5.2.2 Product B 9.5.3 Hitachi High-Technologies Thin Film Metrology Systems Sales, Revenue, Price and Gross Margin (2012-2017) 9.5.4 Main Business/Business Overview 9.6 SCREEN Holdings 9.6.1 Company Basic Information, Manufacturing Base and Competitors 9.6.2 Thin Film Metrology Systems Product Category, Application and Specification 9.6.2.1 Product A 9.6.2.2 Product B 9.6.3 SCREEN Holdings Thin Film Metrology Systems Sales, Revenue, Price and Gross Margin (2012-2017) 9.6.4 Main Business/Business Overview 9.7 Semilab 9.7.1 Company Basic Information, Manufacturing Base and Competitors 9.7.2 Thin Film Metrology Systems Product Category, Application and Specification 9.7.2.1 Product A 9.7.2.2 Product B 9.7.3 Semilab Thin Film Metrology Systems Sales, Revenue, Price and Gross Margin (2012-2017) 9.7.4 Main Business/Business Overview ... For more information, please visit https://www.wiseguyreports.com/sample-request/1080697-global-thin-film-metrology-systems-sales-market-report-2017


Borland J.,J.O.B. Technologies | Sugitani M.,Sumitomo Heavy Industries | Chaung S.S.,National Nano Device Laboratories | Lee Y.J.,National Nano Device Laboratories | And 6 more authors.
Proceedings of the International Conference on Ion Implantation Technology | Year: 2017

Ge-epi on Si wafers contain >1E7/cm2 TDD which degrades junction leakage and potentially also degrade mobility. Therefore we investigated using Ge-Cz wafers as an alternative free of Ge-epi TDD and observed that surface Sn implantation up to 16% can induce surface tensile strain-Ge measured by XRD enhancing top 30nm n-well surface layer mobility (μe) by 2.5x from 500cm2/Vs up to 1250cm2/Vs but the surface tensile strain-Ge degraded top 30nm p-well surface layer mobility (μh) by 73% from 3000cm2/Vs to 800cm2/Vs and surface bulk mobility by 74% from 1850cm2/Vs to 480cm2/Vs. © 2016 IEEE.


Peaker A.R.,University of Manchester | Markevich V.P.,University of Manchester | Hamilton B.,University of Manchester | Parada G.,Semilab | And 8 more authors.
Physica Status Solidi (A) Applications and Materials Science | Year: 2012

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10 10 cm -3). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. Achieving high efficiency in low cost silicon solar cells is a key goal in the quest for effective renewable energy sources. In this Feature Article the authors have studied the recombination process in solar silicon involving defects and impurities which degrade the cell efficiency. Lifetime mapping measurement using microwave detected photoconductivity decay shows that the parasitic recombination is concentrated in specific regions of multi-crystalline ingots. Localised Laplace Deep Level Transient Spectroscopy has been used to distinguish isolated point defects, small precipitate complexes and decorated extended defects. It is concluded that in most multi-crystalline materials the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Borland J.,J.O.B. Technologies | Tallian M.,Semilab | Kosztka D.,Semilab | Pap A.,Semilab | And 5 more authors.
18th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2010 | Year: 2010

Boron 200eV 1E15/cm 2 p+ Ultra Shallow Junctions with various PAI (Ge, Xe & In) and HALO (As & Sb) implantation activated by msec laser annealing (1220°C to 1350°C) were studied using Junction Photo Voltage (JPV) and Modulated Photo Reflectance (MPR). JPV and MPR provided information about junction quality; dopant activation, junction capacitance, residual implant damage and junction leakage. Highest p+ junction quality and best p+ dopant activation was achieved with laser annealing temperatures >1300°C. The results with Sb-HALO were worse than with As-HALO. For HALO implants junction leakage was controlled by direct band to band tunneling while for no HALO it was controlled by end of range residual PAI defects. The high junction leakage (exceeding E-5 A/cm 2) could lead to unreliable Rs and junction capacitance determination. © IEEE.


Duru R.,STMicroelectronics | Le-Cunff D.,STMicroelectronics | Nguyen T.,STMicroelectronics | Barge D.,STMicroelectronics | And 3 more authors.
ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings | Year: 2013

This paper describes a study performed to evaluate in a manufacturing environment the Model Based Infrared Reflectometry (MBIR) technique for the monitoring of the Boron doping in epitaxial SiGe:B layers and Phosphorus doping in epitaxial SiC:P layers. MBIR correlation to comparative techniques is demonstrated on multiple wafer sets, including product wafers on bulk silicon and FD-SOI (Fully Depleted Silicon On Insulator) substrates. The results obtained demonstrate that MBIR is a suitable measurement technique for the in-line monitoring of doping for epitaxial SiGe:B and SiC:P layers. © 2013 IEEE.


Hoglund J.,SEMILAB | Kiss Z.,SEMILAB | Nadudvari G.,SEMILAB | Kovacs Z.,SEMILAB | And 3 more authors.
Journal of Micro/Nanolithography, MEMS, and MOEMS | Year: 2014

The three-dimensional (3-D) integrated circuit relies on the stacking of multiple two-dimensional integrated circuits into a single device using through silicon vias (TSVs) as the vertical interconnect. There are a number of factors driving 3-D integration, including reduced power consumption, resistance-capacitance delay, formfactor, as well as increased bandwidth. One of the critical process steps in all 3-D processes is stacking, which may take the form of wafer-to-wafer, chip-to-wafer, or chip-to-chip bonding. This bonding may be temporary, such as can be used for attaching a device wafer to a handle wafer for thinning, or permanent, incorporating direct metal bonds or solder bumps to carry signals between the wafers and oxide bonds or underfill in the regions without conductors. In each of these processes, it is critical that the bonding is executed in such a way to prevent the occurrence of voids between the layers. This article describes the capabilities of infrared (IR)microscopy to detectmicrometer size voids that can form in optically transparent blanket media such as oxide-to-oxide permanent bonding, benzocyclobuten permanent bonding, or temporary adhesive bonding laminate interfaces. The infrared microscope is described, and the measurement results from a bonded void wafer set are included. The wafers used to demonstrate the tool's capabilities include programmed voids with various sizes, densities, and depths. The results obtained from the IR microscopy measurements give an overview of the technique's capability to detect and measure voids as well as some of its limitations. © The Authors.


Ayerden N.P.,Koç University | Stehle J.-L.,SEMILAB | Holmstrom S.,Koç University | Urey H.,Koç University
International Conference on Optical MEMS and Nanophotonics | Year: 2012

MEMS LGI FTIR system is developed and optimized. Out-of-plane deflection >500μm is obtained at 350Hz using piezoelectric and acoustic actuation. Optical system is optimized to obtain the best spectrum. 20μm SOI film thickness is measured. © 2012 IEEE.

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