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Nurnberg, Germany

Semikron is an independent, family-owned and internationally leading manufacturer of power semiconductor components. The company was founded by Dr. Friedrich Josef Martin in Nuremberg in 1951. German-based Semikron employs 3600 people worldwide . Semikron comprises a global network of 35 companies with 10 production sites in Brazil, China, France, Germany, India, Italy, Korea, Slovakia, South Africa and USA. Semikron is a one-stop provider of chips, discrete semiconductors, transistor, diode and thyristor power modules, power assemblies and systems for markets such as industrial drives, wind and solar, hybrid and electric vehicles, the rail industry and power supplies. According to a survey carried out by BTM Consult ApS, the total wind power capacity installed until 2009 was 122 Gigawatt. 57 Gigawatt comprises power semiconductors from Semikron. In the field of diode/thyristor modules Semikron is the market leader with a 30% share of the worldwide market.The dedication to the hybrid and electric vehicle market is evident in the development and production of power semiconductors for this market but also the majority take-over of Compact Dynamics GmbH in 2010, a development specialist for innovative control systems, the joint venture with drivetek, a provider for application-specific control technology, and the take-over of VePOINT, developing and producing inverters, DC/DC converters and chargers . Wikipedia.

Method and apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components.

A method for producing a power electronic switching device comprising a substrate, having a power semiconductor component arranged thereon; a connection device, and terminal devices. The method comprises: Providing the substrate with an insulation ply and conductor tracks electrically insulated from one another, wherein a power semiconductor component is arranged on a conductor track and is cohesively connected thereto; Arranging the connection device embodied as a film stack; Arranging a thin pressure- and temperature-resistant and moisture-blocking insulation layer along a surface contour of the connection device and comprising a covering section and an overlap section, which overlaps the connection device circumferentially and covers the substrate in a circumferential contact region; Cohesively connecting the connection device to the substrate, whereby the connection device connects the switching device in a circuit-conforming manner internally; Connecting the covering section to the connection device; Connecting the overlap section to the contact region.

A power semiconductor module, and method for its manufacture, comprising a first housing part having a cutout and a DC voltage load connection apparatus forming a structural unit, wherein the DC voltage load connection apparatus has first and second DC voltage load connection elements. The first DC voltage load connection element has a first leadthrough section arranged in the cutout, and the second DC voltage load connection element has a second leadthrough section arranged in the cutout forming a gap therebetween. The first and second leadthrough sections are sheathed by an elastomer, which fills the gap, is cohesively connected to the first and second leadthrough sections and seals off the first and second leadthrough sections with respect to the first housing part. The inventive power semiconductor module exhibits a high resistance to thermal cycling, and the distance between the DC voltage load connection elements can be configured to be small.

SEMIKRON Inc. | Date: 2015-04-10

A power converter arrangement comprising: a housing having first and second chambers separated by a separating body; a power semiconductor module; and a device. The capacitor is electrically conductively connected to power semiconductor module by a connecting device. Power semiconductor module, the connecting device and connection elements of the capacitor are arranged in first chamber. The capacitor reaches through the separating body between the first and second chambers into second chamber for cooling of the capacitor. The separating body has a first cutout through which the capacitor reaches. A flat, elastic sealing body which runs peripherally around the first cutout and reaches into the region of the first cutout and surrounds the capacitor there in sealing fashion, is arranged on a surface of the separating body. A pressing body presses the sealing body against the separating body and terminates in sealing fashion there.

SEMIKRON Inc. | Date: 2015-05-10

A power semiconductor module and an arrangement including it. The module includes a housing, a switching device having a substrate connected to the housing, a connecting device, load connection devices and a pressure device movable relative to the housing. The substrate has a first central passage and conductor tracks which are electrically insulated from one another. A power semiconductor component sits on a conductor track. The connecting device has two main surfaces and an electrically conductive film. The pressure device has a pressure body with a second passage, in alignment with the first passage and a first recess. A pressure element projects out of the recess, and presses onto a section of the second main surface. This section is within the surface of the component projects normal to the substrate. The first and second passages receive a fastener which force-fittingly fastens the module to the cooling device.

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