Semikron is an independent, family-owned and internationally leading manufacturer of power semiconductor components. The company was founded by Dr. Friedrich Josef Martin in Nuremberg in 1951. German-based Semikron employs 3600 people worldwide . Semikron comprises a global network of 35 companies with 10 production sites in Brazil, China, France, Germany, India, Italy, Korea, Slovakia, South Africa and USA. Semikron is a one-stop provider of chips, discrete semiconductors, transistor, diode and thyristor power modules, power assemblies and systems for markets such as industrial drives, wind and solar, hybrid and electric vehicles, the rail industry and power supplies. According to a survey carried out by BTM Consult ApS, the total wind power capacity installed until 2009 was 122 Gigawatt. 57 Gigawatt comprises power semiconductors from Semikron. In the field of diodeDC converters and chargers . Wikipedia.
SEMIKRON Inc. | Date: 2016-08-26
A submodule comprising: a substrate, a power semiconductor component, a connection device, a terminal device and an insulating body. The substrate has conductor tracks electrically insulated from one another, and the component is electrically conductively connected to a track. The connection device is a film composite with a first surface facing the component and the substrate and an opposed second surface. The insulating body has: a first partial body, connected to an edge of the substrate, a first cutout for a terminal, a second partial body, embodied as a pressure body and a second cutout, with a pressure element projecting therefrom. The second partial body is movable relative to the first partial body in the direction of the substrate to press with the pressure element onto a section of the second surface. The section is within the area of the component in projection along the direction of the normal thereto.
SEMIKRON Inc. | Date: 2016-09-26
A method for producing a power-electronics switching device and a power electronic switching device produced thereby. In the power-electronics switching device, a power semiconductor component is arranged on a first region of a conductor track of a substrate. An insulating film comprising a cutout is then provided, wherein an overlap region of the insulating film, which overlap region is adjacent to the cutout, is designed to cover an edge region of the power semiconductor component. This is followed by arranging the insulating film on the substrate, with the power semiconductor component arranged on it, in such a way that the power semiconductor component is covered on all sides of its edge region by the covering region of the insulating film, wherein a further section of the insulating film covers parts of one of the conductor tracks. Finally, the connecting device is arranged.
SEMIKRON Inc. | Date: 2016-08-22
A power electronic subassembly having a housing and a capacitor arranged therein. The housing has an internally arranged cooling area, which is cooled by a cooling device integrated in the housing or an external cooling device. The capacitor has a contact device of a first polarity and a contact device of a second polarity and a capacitor busbar system. This capacitor busbar system comprises first and second sheet-like shaped metal bodies. The first metal body with the first contact device of the first polarity and the second metal body with the second contact device of the second polarity are electrically conductively connected. A first portion of the first metal body has a first subportion, which is arranged parallel to and at a distance from the cooling area, and a second subportion, which is in thermal contact with the cooling area, wherein the two subportions are connected by an intermediate portion.
SEMIKRON Inc. | Date: 2016-11-20
A power electronic switching device having plurality of potential surfaces. At least two different potentials are respectively assigned to at least one of the potential surfaces. A plurality of semiconductor components are arranged in an nm matrix, oriented in the x-y-direction, on a first conductor track, formed by at least one potential surface of the first potential. The semiconductor components are connected in parallel with one another and form a current valve. In this case, the semiconductor components can be distributed among a plurality of potential surfaces of the first potential which form the first conductor track.
SEMIKRON Inc. | Date: 2016-11-20
A pressing ram having an elastic cushion element and intended for the material-bonded press-sintering connection of a first connection partner to a second connection partner of a power-electronics component. The elastic cushion element of the pressing ram is enclosed by a dimensionally stable frame, within which the cushion element and a guide part of the pressing ram are guided for linear movement such that the dimensionally stable frame lowers onto the first connection partner, or a workpiece carrier with the first connection partner arranged therein, and, following abutment against the same, the pressing ram together with the elastic cushion element is lowered onto the second connection partner and the elastic cushion exerts a pressure necessary for connecting the first connection partner to the second connection partner.
SEMIKRON Inc. | Date: 2016-09-15
A centering holding device for a Rogowski coil. The holding device comprises a virtual axis; a first cutout running from a first main side to a second main side thereof through the holding device and is arranged centrally with respect to the axis. The holding device has a channel in the shape of a circle arc around the axis and around the first cutout from a first channel opening to a second channel opening. The first cutout and the channel are coaxial relative to the axis of the holding device. The holding device has a second cutout, which leaves out an edge region of the holding device. The first and second channel openings lead into the second cutout. Furthermore, the invention relates to a method for arranging a Rogowski coil by the holding device.
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-14-2015 | Award Amount: 61.99M | Year: 2016
Addressing European Policies for 2020 and beyond the Power Semiconductor and Electronics Manufacturing 4.0 (SemI40) project responds to the urgent need of increasing the competitiveness of the Semiconductor manufacturing industry in Europe through establishing smart, sustainable, and integrated ECS manufacturing. SemI40 will further pave the way for serving highly innovative electronic markets with products powered by microelectronics Made in Europe. Positioned as an Innovation Action it is the high ambition of SemI40 to implement technical solutions on TRL level 4-8 into the pilot lines of the industry partners. Challenging use cases will be implemented in real manufacturing environment considering also their technical, social and economic impact to the society, future working conditions and skills needed. Applying Industry 4.0, Big Data, and Industrial Internet technologies in the electronics field requires holistic and complex actions. The selected main objectives of SemI40 covered by the MASP2015 are: balancing system security and production flexibility, increase information transparency between fields and enterprise resource planning (ERP), manage critical knowledge for improved decision making and maintenance, improve fab digitalization and virtualization, and enable automation systems for agile distributed production. SemI40s value chain oriented consortium consists of 37 project partners from 5 European countries. SemI40 involves a vertical and horizontal supply chain and spans expertise and partners from raw material research, process and assembly innovation and pilot line, up to various application domains representing enhanced smart systems. Through advancing manufacturing of electronic components and systems, SemI40 contributes to safeguard more than 20.000 jobs of people directly employed in the participating facilities, and in total more than 300.000 jobs of people employed at all industry partners facilities worldwide.
SEMIKRON Inc. | Date: 2016-06-30
A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor. The undervoltage detection circuit generates an undervoltage detection signal if a power semiconductor voltage present between the drain and the source of the field effect transistor falls below a specific voltage value. The drive device switches on the field effect transistor when a switch-on command for switching on the field effect transistor and the undervoltage detection signal are present. The invention provides a power semiconductor circuit with low energy loss.
SEMIKRON Inc. | Date: 2016-04-11
An arrangement having a DC-voltage busbar and a power component. The power component has two flat DC-voltage connection conductors, each with a contact section and arranged closely adjacent to one another. Each connection conductor has a clamping section beside the respective contact section in the direction of current flow. The busbar has two partial busbars, each with a contact section and arranged closely adjacent to one another. Each partial busbar has a clamping section beside the respective contact section in the direction of current flow. The contact section of at least one connection conductor is electrically connected to the contact section of the associated partial busbar by connecting the clamping sections of the connection conductor to the clamping section of the partial busbars in a flat and force-fitting manner above one another and the respective contact sections therefore lying directly flat on one another.
SEMIKRON Inc. | Date: 2016-07-10
A power electronics module having a base plate, a circuit carrier arranged on the base plate and a plurality of conductor tracks which are electrically insulated from the base plate. A power semiconductor component is arranged on one of the conductor tracks, and has a load connection element. In this case, the base plate has a substantially continuous first recess and the circuit carrier has a substantially continuous second recess, wherein the first and second recesses are arranged such that they are in alignment with one another. The load connection element has a first contact device which is in electrically conductive contact with a contact area of that side of the conductor track which is averted from the base plate, a second contact device for externally making contact with the circuit carrier, and a connecting section, which extends through the first and second recesses, between the first and second contact devices.