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TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of new two high current products, the 60V "TLP3407S" and the 100V "TLP3409S", additions to its line-up of photorelays packaged in S-VSON4[1], the package with the industry's smallest mounting area[2]. Mass production shipments start today. The new products realize high voltages while retaining the features of TLP3406S, already in the line-up, which offers a 30V voltage with large on-state current rating and small size. The higher voltages realize support for DPS[3] applications, such as SoC testers, which require voltage variation for automotive ICs. The S-VSON4 package has a 22.5% smaller mounting area than the current VSON4 package[4]. This series also pushes operating temperature to a new high, from 85°C to 110°C. It contributes to improved design efficiency by reducing the size of the tester board, increasing the number of relay circuits, and further improving integration density. The latest Gartner market report recognizes Toshiba as the leading manufacturer of optocouplers by sales in 2015 and 2016, with 23% of sale-based market share in CY2016. (Source: Gartner “Market Share: Semiconductor Devices and Applications Worldwide, 2016” 30 March 2016.) Toshiba will continue to deliver products that meet the needs of customers by promoting the development of a diverse portfolio of photocouplers and photorelays tailored to market trends. Notes [1] S-VSON4 package: 2.00mm×1.45mm (typ.) [2] For photorelay products, as of May 10, 2017. Toshiba survey. [3] DPS (Device Power Supply): Power supply peripheral circuits of various testers. [4] VSON4 package: 2.45mm×1.45mm (typ.) [5] New products. Follow the link below for more on the new products and the Toshiba photorelay line-up. https://toshiba.semicon-storage.com/ap-en/product/opto/photocoupler/photorelay.html Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. Toshiba Corporation, a Fortune Global 500 company, channels world-class capabilities in advanced electronic and electrical product and systems into three focus business fields: Energy that sustains everyday life, that is cleaner and safer; Infrastructure that sustains quality of life; and Storage that sustains the advanced information society. Guided by the principles of The Basic Commitment of the Toshiba Group, “Committed to People, Committed to the Future”, Toshiba promotes global operations and is contributing to the realization of a world where generations to come can live better lives. Founded in Tokyo in 1875, today’s Toshiba is at the heart of a global network of 550 consolidated companies employing 188,000 people worldwide, with annual sales surpassing 5.6 trillion yen (US$50 billion). (As of March 31, 2016.) To find out more about Toshiba, visit www.toshiba.co.jp/index.htm


TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today unveiled “TLX9310,” a low power consumption photocoupler housed in a 5pin SO6 package for high speed communication in automotive applications. Mass production shipments start today. Integration of a high-power infrared LED and high-gain/high-speed integrated circuit photo IC chip cuts power consumption to below a quarter that of Toshiba’s current output type ICs (TLX9304, TLX9376, TLX9378) and will reduce consumption during standby and driving of automotive applications. The latest Gartner market report recognizes Toshiba as the leading manufacturer of optocouplers by sales in 2015 and 2016, with 23% of sale-based market share in CY2016. (Source: Gartner, Inc. “Market Share: Semiconductor Devices and Applications, Worldwide, 2016” 30 March 2017) Toshiba will continue to deliver products that meet the needs of customers by promoting the development of a diverse portfolio of photocouplers and photorelays tailored to market trends. Follow the link below for more on the new product and Toshiba’s photocoupler line-up for automotive applications. https://toshiba.semicon-storage.com/ap-en/product/opto/photocoupler/automotive.html Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. About Toshiba Toshiba Corporation, a Fortune Global 500 company, channels world-class capabilities in advanced electronic and electrical product and systems into three focus business fields: Energy that sustains everyday life, that is cleaner and safer; Infrastructure that sustains quality of life; and Storage that sustains the advanced information society. Guided by the principles of The Basic Commitment of the Toshiba Group, “Committed to People, Committed to the Future”, Toshiba promotes global operations and is contributing to the realization of a world where generations to come can live better lives. Founded in Tokyo in 1875, today’s Toshiba is at the heart of a global network of 550 consolidated companies employing 188,000 people worldwide, with annual sales surpassing 5.6 trillion yen (US$50 billion). (As of March 31, 2016.) To find out more about Toshiba, visit www.toshiba.co.jp/index.htm


The high price of oil in the past few years has been a catalyst for development in other alternative energy sources. Semiconductor technology surrounding the alternative energy markets includes advanced IGBT design, optoelectronics, advanced power conversion ICs, digital signal processing, MCUs, and advanced mixed signal and analog circuits. This report discussed the potential for these products to be the next killer green application. Renewable, alternative energy technologies continue to grab the attention of private industries and world governments. Semiconductors are used in these technologies to convert the energy or power to something functional, such as converting solar energy into electricity. Chapter 2 Solar Energy 2.1 Solar Infrastructure 2.1.1 Current developments 2.1.2 Worldwide installed photovoltaic totals 2.1.3 Applications of PV 2.1.3.1 PV Power Stations 2.1.3.2 PV in Buildings 2.1.3.3 PV in Transport 2.1.3.4 PV in Standalone Devices 2.1.3.5 Rural Electrification 2.1.3.6 Solar Roadways 2.1.4 Economics of PV 2.1.4.1 Power Costs 2.1.4.2 Grid Parity 2.1.4.3 Financial Incentives 2.1.5 Solar Forecast 2.2 Semiconductor Technology 2.2.1 Inverter/Converter Devices 2.2.2 Key Component Semiconductor Devices 2.3 Forecasts 2.3.1 Inverter Forecast 2.3.2 Semiconductor Forecast Chapter 3Wind Energy 3.1 Wind Energy Infrastructure 3.1.1 Electricity Generation 3.1.1.1 Grid Management System 3.1.1.2 Capacity Factor 3.1.2 Turbine Placement 3.1.3 Offshore Wind Farms 3.1.4 Utilization Of Wind Power 3.1.5 Small Scale Wind Power 3.1.6 Economics And Feasibility 3.1.6.1 Growth And Cost Trends 3.1.6.2 Theoretical Potential 3.1.6.3 Direct Costs 3.1.6.4 External Costs 3.1.6.5 Incentives 3.2 Semiconductor Technology 3.2.1 Key Component Semiconductor Devices 3.2.2 Semiconductor Forecast Chapter 4 Fuel Cells 4.1 Fuel Cell Infrastructure 4.1.1 Fuel Cell Design 4.1.2 History 4.1.3 Types of fuel cells 4.1.3.1 Polymer Electrolyte Membrane 4.1.3.2 Phosphoric Acid 4.1.3.3 Direct Methanol 4.1.3.4 Alkaline 4.1.3.6 Molten Carbonate 4.1.3.7 Solid Oxide 4.1.3.8 Proton Exchange Fuel Cells 4.1.3.9 Regenerative (Reversible) Fuel Cells 4.1.4 Efficiency 4.1.4.1 Fuel cell efficiency 4.1.4.2 In practice 4.1.5 Fuel cell applications 4.1.5.1 Applications 4.1.5.2 Hydrogen Transportation And Refueling 4.1.6 Fuel Cell Manufacturers 4.2 Semiconductor Technology 4.2.1 Key Component Semiconductor Devices 4.2.2 Semiconductor Forecast Chapter 5 Storage/Electric Vehicle Technology 5.1 Storage/Electric Vehicle Infrastructure 5.1.1 Usage And Applications 5.1.2 Charging And Discharging 5.1.3 Active Components 5.1.3.1 Common Rechargeable Battery Types 5.1.3.2 Less Common Types 5.1.4 Recent Developments 5.1.5 Batteries for Electric Vehicles 5.1.5.1 NiMH Batteries 5.1.5.2 EV Li-Ion Rechargeable Batteries 5.1.5.3 Start-Stop Batteries 5.1.6 Vehicle Charging 5.1.6.1 Grid Impacts 5.1.6.2 Communication 5.2 Forecasts 5.2.1 HEV/EV Forecast 5.2.2 Charging Station Forecast 5.2.3 Key Component Semiconductor Devices - HEV/EV 5.2.4 Key Component Semiconductor Devices -Charging Stations 5.2.5 Semiconductor Forecast - HEV/EV 5.2.3 Semiconductor Forecast - Charging Station Chapter 6 Geothermal Energy 6.1 Geothermal Energy Technology Infrastructure 6.1.1 Geothermal Technologies 6.1.2 Advantages 6.1.3 Disadvantages 6.1.4 History Of Development 6.1.5 Developments Around The World 6.1.6 Geothermal Forecast 6.2 Semiconductor Technology 6.2.1 Key Component Semiconductor Devices 6.2.2 Semiconductor Forecast Chapter 9 Hydroelectricity 9.1 Introduction 9.2 Generating Methods 9.2.1 Conventional (Dams) 9.2.2 Pumped-Storage 9.2.3 Run Of The River 9.2.4 Tidal Power 9.2.4.1 Tidal Stream Generator 9.2.4.2 Tidal Barrage 9.2.4.3 Dynamic Tidal Power 9.2.4.4 Tidal Lagoon 9.3 Sizes, Types And Capacities Of Hydroelectric Facilities 9.3.1 Large Facilities 9.3.2 Small Facilities 9.3.3 Micro Facilities 9.3.4 Pico Facilities 9.3.5 Underground Facilities 9.4 Forecasts 9.4.1 World Hydroelectric Forecast 9.4.1.1 Large Hydro Power Plants 9.4.1.2 Small And Micro Hydro Power Plants 9.4.2 Semiconductor Forecast For more information about this report visit http://www.researchandmarkets.com/research/27jd9w/semiconductors To view the original version on PR Newswire, visit:http://www.prnewswire.com/news-releases/semiconductors-for-alternative-energy-technologies-2017-opportunities-and-markets-report---research-and-markets-300457396.html


News Article | May 17, 2017
Site: www.businesswire.com

TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company is expanding its line-up of SO6L IC photocouplers with a new package type SO6L(LF4), the wide leadform option. The wide leadform option is available for three high-speed IC photocouplers and five IGBT/MOSFET driver photocouplers. Mass production shipments start today. The new photocouplers are in a SO6L(LF4) package and can be mounted on land patterns of SDIP6(F type) products with a maximum height of 4.15mm. The SO6L(LF4)’s 2.3mm (max) thin package offers users the advantage of directly replacing SDIP6(F type) products in height-critical applications that require lower package height, such as a back of PCBs. To support replacement of widely used original land pattern of SDIP6(F type) package products, Toshiba will expand the wide leadform option line-up for other SO6L IC photocouplers. The latest Gartner market report recognizes Toshiba as the leading manufacturer of optocouplers by sales in 2015 and 2016, with 23% of sale-based market share in CY2016. (Source: Gartner “Market Share: Semiconductor Devices and Applications Worldwide 2016” 30 March, 2016) Toshiba will continue to deliver products that meet the needs of customers by promoting the development of a diverse portfolio of photocouplers and photorelays tailored to market trends. Follow the link below for more on the new products and Toshiba’s photocoupler line-up. https://toshiba.semicon-storage.com/ap-en/product/opto/photocoupler.html Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. About Toshiba Toshiba Corporation, a Fortune Global 500 company, channels world-class capabilities in advanced electronic and electrical product and systems into three focus business fields: Energy that sustains everyday life, that is cleaner and safer; Infrastructure that sustains quality of life; and Storage that sustains the advanced information society. Guided by the principles of The Basic Commitment of the Toshiba Group, “Committed to People, Committed to the Future”, Toshiba promotes global operations and is contributing to the realization of a world where generations to come can live better lives. Founded in Tokyo in 1875, today’s Toshiba is at the heart of a global network of 550 consolidated companies employing 188,000 people worldwide, with annual sales surpassing 5.6 trillion yen (US$50 billion). (As of March 31, 2016.) To find out more about Toshiba, visit www.toshiba.co.jp/index.htm


TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of new two mid-voltage products, the 100V "TLP3823" with a 3A drive current, and the 200V "TLP3825" with a 1.5A drive current, additions to its line-up of large current photorelays to replace mechanical relays. Mass production shipments start today. Alongside Toshiba’s current 60V “TLP3547” with a 5A drive current, the new products with drive currents higher than 1A will extend the range of photorelay application. Recent years have seen accelerated replacement of mechanical relays with photorelays. Toshiba is supporting and promoting this shift by applying its latest trench MOSFET, 8th generation UMOS, to realize output currents exceeding 1A. Unlike mechanical relays, photorelays have no physical contacts subject to wear and tear, an advantage that contributes to set reliability. Use of photorelays also supports development of smaller and thinner products. Toshiba’s new photorelays also offer the advantage of a guaranteed pulsed on-state current that is three times larger than continuous on-state current, securing a bigger margin for safety design. The latest Gartner market report recognizes Toshiba as the leading manufacturer of optocouplers by sales in 2015 and 2016, with a 23% by sale-based market share in CY2016. (Source: Gartner “Market Share Semiconductor Devices and Applications Worldwide 2016”, 30 March 2016). Toshiba will continue to deliver products that meet the needs of customers by promoting the development of a diverse portfolio of photocouplers and photorelays tailored to market trends. • Industrial equipment • General purpose inverters • Heating, Ventilation and Air Conditioning (HVAC) • Thermostats • Building automation equipment • Semiconductor testers (Memory, SoC, LSI) • Various test equipment • Replacement of mechanical relays Follow the link below for more on the new products and Toshiba’s photorelay line-up. https://toshiba.semicon-storage.com/ap-en/product/opto/photocoupler/photorelay.html Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. Toshiba Corporation, a Fortune Global 500 company, channels world-class capabilities in advanced electronic and electrical product and systems into three focus business fields: Energy that sustains everyday life, that is cleaner and safer; Infrastructure that sustains quality of life; and Storage that sustains the advanced information society. Guided by the principles of The Basic Commitment of the Toshiba Group, “Committed to People, Committed to the Future”, Toshiba promotes global operations and is contributing to the realization of a world where generations to come can live better lives. Founded in Tokyo in 1875, today’s Toshiba is at the heart of a global network of 550 consolidated companies employing 188,000 people worldwide, with annual sales surpassing 5.6 trillion yen (US$50 billion). (As of March 31, 2016.) To find out more about Toshiba, visit www.toshiba.co.jp/index.htm


News Article | May 19, 2017
Site: www.businesswire.com

東京--(BUSINESS WIRE)--(ビジネスワイヤ) -- 株式会社東芝ストレージ&デバイスソリューション社は、低消費電力が求められる車載機器の高速通信用に、5pin SO6パッケージの低消費電力フォトカプラ「TLX9310」を製品化し、本日から出荷を開始します。 新製品は、高出力の赤外発光ダイオードと高利得・高速の受光ICの組み合わせにより、既存製品[注1]に比べて1/4以下の低消費電力を実現しました。これにより車載機器での待機時や駆動時の消費電力削減に貢献します。 米大手ITアドバイザリ会社ガートナー社の最新レポートにおいて、当社は2015年から2016年にかけて、売り上げベースでシェアNo.1のフォトカプラメーカーと認定されました。また、そのレポートによると、当社は2016年に販売金額ベースで市場シェア23%を獲得しました。(出典:Gartner, Inc. “Market Share: Semiconductor Devices and Applications, Worldwide, 2016” 30 March 2017) 当社は、市場動向に合わせた多様なフォトカ


TOKYO--(BUSINESS WIRE)--Toshiba Corporation's (TOKYO:6502) Storage & Electronic Devices Solutions Company today announced the launch of“TLP5214A,” a new smart gate driver photocoupler for use in driving medium-power IGBTs and power MOSFETs that delivers desaturation sensing characteristics that improve on those offered by the current “TLP5214”. Mass production shipments start today. TLP5214A newly integrates such features as desaturation leading edge blanking time, filtering time, and optimization of soft turn-off performance. These contribute to secure execution of applications by suppressing short-time pulse noise during switching and desaturation sensing. The latest Gartner market report recognizes Toshiba as the leading manufacturer of optocouplers by sales in 2015 and 2016, with 23% of sale-based market share in CY2016. (Source: Gartner “Market Share: Semiconductor Devices and Applications Worldwide 2016” 30 March, 2016) Toshiba will continue to deliver products that meet the needs of customers by promoting the development of a diverse portfolio of photocouplers and photorelays tailored to market trends. Follow the link below for more on the new product and Toshiba’s photocoupler line-up. https://toshiba.semicon-storage.com/ap-en/product/opto/photocoupler.html Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice. About Toshiba Toshiba Corporation, a Fortune Global 500 company, channels world-class capabilities in advanced electronic and electrical product and systems into three focus business fields: Energy that sustains everyday life, that is cleaner and safer; Infrastructure that sustains quality of life; and Storage that sustains the advanced information society. Guided by the principles of The Basic Commitment of the Toshiba Group, “Committed to People, Committed to the Future”, Toshiba promotes global operations and is contributing to the realization of a world where generations to come can live better lives. Founded in Tokyo in 1875, today’s Toshiba is at the heart of a global network of 550 consolidated companies employing 188,000 people worldwide, with annual sales surpassing 5.6 trillion yen (US$50 billion). (As of March 31, 2016.) To find out more about Toshiba, visit www.toshiba.co.jp/index.htm


Navitas Semiconductor today announced that Dan Kinzer, Co-Founder & Chief Technology Officer/Chief Operating Officer, will deliver a plenary address entitled “Developments in GaN Power ICs” at the 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD) The plenary opening session will be held at the Royton Sapporo Hotel in Sapporo, Japan on Monday morning, May 29, 2017. Abstract: Gallium Nitride is an emerging technology that is enabling major advances in power electronics. Power integrated circuits are now emerging in the market and showing unprecedented efficiency, density, and system cost advantages. This paper reviews the beginnings of power integrated circuit techniques, leading to present implementations in advanced IC products, and forecasts future directions for the new technology. ISPSD is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and applications. “I am extremely pleased and honored to address my long-time friends and colleagues in the ISPSD community about the exciting breakthroughs in GaN Power ICs and the promise they bring to revolutionize a broad range of power electronic applications,” said Navitas CTO/COO, Dan Kinzer. “We are also delighted by the response of the power electronics industry to our GaN power IC’s innovations.” Navitas established its position as the premier GaN innovator with the introduction of the first commercial GaN power ICs, which established new industry benchmarks for their combination of frequency, integration and density. “ISPSD Japan 2017 is a key opportunity for Navitas to present advances in GaN power ICs and how they are enabling new benchmarks in speed, efficiency and power density at an affordable cost.” commented Navitas VP of Sales and Marketing, Stephen Oliver. “Since launching our single and half-bridge GaN Power ICs the high customer demand is validating the huge advantages of the Navitas portfolio,” Oliver added. About Navitas: Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in 2013 and based in El Segundo, CA, USA. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 200 patents among its founders. The proprietary AllGaN™ process design kit monolithically integrates the highest performance GaN FETs with logic and analog circuits. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 30 Navitas patents are granted or pending. About ISPSD JAPAN 2017 International Symposium on Power Semiconductor Devices and ICs (ISPSD) is the premier forum for technical discussion in all areas of power semiconductor devices and integrated circuits, their hybrid technologies, and applications. The 29th annual event takes place at Sapporo, Japan May 28–June 1, 2017. ISPSD 2017 is organized by the Institute of Electrical Engineers of Japan (IEEJ) and technically co-sponsored by IEEE Electron Devices Society, IEEE Power Electronics Society and NPERC-J. This conference is supported by JSPS KAKENHI Grant Number 16HP0704. Navitas Semiconductor and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor, Inc. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.


NJMET's Joseph Federico expands NJMET's efforts to aid the poor of Sri Lanka to Brazil. They are working with Amigos do Gotinha de Luz of Greenwich, CT. -- Joseph Federico, of NJMET, Inc. headquartered in Clifton NJ, announced the company's ninth year of relief efforts to aid families in Sri Lanka and to include poor villages in Brazil aided by an independent private group known as Amigos do Gotinha de Luz of Greenwich, CT. Over the nine years, Wayne, NJ resident Joseph Federico has led a campaign at NJMET Inc. to send clothes, pencils, notebooks, candy and toiletries to needy families housed in churches, temples and schools throughout Sri Lanka and today has diversified its Easter/Passover endeavor by helping Amigos do Gotinha de Luz.The first shipment of clothing, candy, refreshments, and toiletries has already been collected and shipped out from NJMET's Clifton office.  "I am pleased that our efforts have expanded from Sri Lanka to include Brazil.  After visiting Brazil in 2014 and getting involved with the Amigos do Gotinha de Luz and their fundraising activities, I knew it was time to expand our charitable efforts," said Joseph Federico."NJMET's employees and value added customers continue to make very generous contributions to our drives and we are grateful for their support," added Joseph Federico from their laboratory headquarters located in Clifton, NJ.For nearly 40 years, NJMET Inc. has been a pioneer in the Commercial, Military, Aerospace, Industrial, Automotive and Medical fields providing worldwide quality electronic component procurement, screening and qualification testing of electronic component products. NJMET, Inc. is AS9100 Rev. C / ISO9001:2008 certified and recently successfully completed of The Defense Logistic Agency's (DLA) laboratory suitability assessment and are now qualified to test federal stock classes (FSC) 5961 (Semiconductor Devices) and FSC 5962 (Microcircuits)to DLA's QTSL test requirements. NJMET, Inc. is also registered with GIDEP, SAE International, ASTM, ITAR, IEEE, and ANSI/ESD20.20 and has an outstanding A+ rating with the Better Business Bureau.To learn more about NJMET and its international charity efforts visit the "In the News" section of their website at www.njmetmtl.com or call Joseph Federico at NJMET, Inc. in Clifton NJ at (973) 546-5393. To learn more about NJMET Director Joseph Federico's volunteer efforts, visit: http://josephfedericonj.biz/ njmet-charity.htm


Klipstein P.C.,Semiconductor Devices
Physical Review B - Condensed Matter and Materials Physics | Year: 2010

A Kane-like envelope function Hamiltonian is derived for the Γ15 valence and Γ1 conduction states of lattice-matched, semiconductor superlattice structures, with metallurgically abrupt interfaces. The local microscopic potential is treated as a weak perturbation on that of a reference crystal and is expressed in terms of a one-dimensional profile function, G (z), which modulates the difference between the potentials of the well and barrier materials. In contrast to many previous treatments, all terms up to order "=2 in δ V̄ ( k̄ a )" are included, where δ V̄ is the typical band offset, k̄ is the average momentum modulus of the envelope function, and a is the bulk lattice parameter. Far from the interfaces, the Hamiltonian is identical to the familiar bulk Kane Hamiltonian, with the standard bulk parameters. However, the operator ordering in the valence band is revised from the commonly used Burt scheme. An operator ordering scheme has also been derived for the linear- k P terms that couple conduction and valence states. Expressions have been derived for the δ functionlike, and derivative of a δ functionlike, interface terms. These are off-diagonal and diagonal, respectively, in common atom superlattices like GaAs/ Alx Ga1-x As, where the antisymmetric contribution to G ′ (z) is expected to be small. For superlattices with no common atom, additional interface terms are introduced. If the difference in the spin-orbit splitting energy for the two superlattice materials is comparable with the valence-band offset, then relativistic corrections can introduce many more, weak interface contributions. Part of the relativistic interface matrix has been derived, which includes the most significant terms. Finally, a scheme is proposed for reducing the number of independent Luttinger parameters required, when using the Hamiltonian to fit experimental spectral data. © 2010 The American Physical Society.

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