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Kikuchi Y.,Semiconductor Business Group Consumer Products and Devices Group | Tateshita Y.,Semiconductor Business Group Consumer Products and Devices Group | Miyanami Y.,Semiconductor Business Group Consumer Products and Devices Group | Wakabayashi H.,Semiconductor Business Group Consumer Products and Devices Group | And 2 more authors.
Japanese Journal of Applied Physics | Year: 2010

Junction depth and parasitic resistance have a trade-off relationship. To improve this relationship, in situ boron-doped selective Si epitaxy was used to fabricate metal-oxide-semiconductor field-effect transistors (MOSFETs) with raised source and drain extensions and a facet. The amount of boron diffusion was small and the MOSFET also had low extension sheet resistance. Furthermore, with the optimization of four process parameters, spike rapid thermal annealing (RTA) temperature, halo dose, impurity concentration introduced by in situ doping, and epitaxial Si thickness, the relationship between the gate length at Ioff loff 100 nA/μm and the drive current at Ioff loff 100 nA/μm was improved. © 2010 The Japan Society of Applied Physics.


Kikuchi Y.,Semiconductor Business Group Consumer Products and Devices Group | Tateshita Y.,Semiconductor Business Group Consumer Products and Devices Group | Miyanami Y.,Semiconductor Business Group Consumer Products and Devices Group | Wakabayashi H.,Semiconductor Business Group Consumer Products and Devices Group | And 2 more authors.
Japanese Journal of Applied Physics | Year: 2010

A new concept planar metal-oxide-semiconductor field-effect transistor (MOSFET) which was fabricated by in situ doped selective Si epitaxy, has been proposed. Owing to the ultra-shallow junction, the short-channel effects were improved, and the drive current was increased by the gate overlapped structure as well. The characteristics of this new concept MOSFET were improved compared with those of a conventional MOSFET because of improvements in short-channel effects and parasitic resistances. © 2010 The Japan Society of Applied Physics.

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